Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. PREPRODUCTION • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25.5 dB Drain Efficiency — 69% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Output Power • Integrated ESD Protection 10 - 450 MHz, 150 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 225°C Capable Plastic Package • RoHS Compliant CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300N CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5 +110 Vdc Gate - Source Voltage VGS - 0.5 + 12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW Case Temperature TBD°C, TBD W CW RθJC TBD TBD °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (Calculator available when part is in production.) 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6V2150N MRF6V2150NB 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) TBD (Minimum) Machine Model (per EIA/JESD22 - A115) TBD (Minimum) Charge Device Model (per JESD22 - C101) TBD (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 110 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc BVDSS 110 — — Vdc IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) — 2.4 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.3 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss — 1.54 — pF Output Capacitance (VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 94 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 163 — pF Off Characteristics Drain - Source Breakdown Voltage (ID = 75 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 οhm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW Power Gain Gps — 25.5 — dB Drain Efficiency ηD — 69 — % IRL — - 17 — dB P1dB — 165 — W Input Return Loss Pout @ 1 dB Compression Point, CW (f = 220 MHz) ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2150N MRF6V2150NB 2 RF Device Data Freescale Semiconductor 80 27 26 70 26 Gps 60 25 24 50 23 40 VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 22 ηD 21 30 20 0 50 100 150 Gps, POWER GAIN (dB) 27 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS 540 mA 25 450 mA 360 mA 24 405 mA 23 22 20 21 10 20 200 VDD = 50 Vdc f = 220 MHz 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 1. Power Gain and Drain Efficiency versus CW Output Power Figure 2. Power Gain versus Output Power −20 55 85_C −25 Pout, OUTPUT POWER (dBm) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 495 mA −30 IM3 −U IM3 −L −35 VDD = 50 Vdc, IDQ = 450 mA f1 = 220 MHz, f2 = 220.1 MHz Two −Tone Measurements −40 −45 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) PEP Figure 3. Third Order Intermodulation Distortion versus Output Power 100 −30_C 50 25_C 45 VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 40 35 10 15 20 25 30 35 Pin, INPUT POWER (dBm) Figure 4. Output Power versus Input Power over Temperature MRF6V2150N MRF6V2150NB RF Device Data Freescale Semiconductor 3 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6V2150N NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF6V2150N MRF6V2150NB 4 RF Device Data Freescale Semiconductor MRF6V2150N MRF6V2150NB RF Device Data Freescale Semiconductor 5 MRF6V2150N MRF6V2150NB 6 RF Device Data Freescale Semiconductor MRF6V2150N MRF6V2150NB RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6V2150N MRF6V2150NB Document Number: Order from RF Marketing 8Rev. 6, 10/2006 RF Device Data Freescale Semiconductor