FREESCALE MRFE6S9130HSR3

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9130H
Rev. 0, 4/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRFE6S9130HR3
MRFE6S9130HSR3
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9130HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9130HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
RθJC
0.45
0.51
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1
2.1
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
VGS(Q)
2
2.9
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
VDS(on)
—
0.22
0.5
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.6
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
66
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
18
19.2
21
dB
Drain Efficiency
ηD
29
30.5
—
%
ACPR
—
- 47.6
- 46
dBc
IRL
—
- 29
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
MRFE6S9130HR3 MRFE6S9130HSR3
2
RF Device Data
Freescale Semiconductor
B2
+
+
L2
+
C7
Z1
+
C6
Z2
Z3
L1
Z4
Z5
C8 Z10 Z11 Z12
Z9
Z6
RF
OUTPUT
Z13
Z14 Z15
Z16
C4 Z8
Z7
VSUPPLY
C15 C16 C17 C18 C19
C14
VBIAS
RF
INPUT
+
B1
Z17
C13
C10
C9
C11
C12
C1
C2
Z1
Z2
Z3
Z4
Z5
Z6, Z11
0.383″
1.250″
0.190″
0.127″
0.173″
0.200″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.220″
x 0.220″
C3
DUT
C5
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.620″ Taper
Z7
Z8
Z9
Z10
Z12
Z13
0.220″
0.077″
0.146″
0.152″
0.184″
0.261″
x 0.630″
x 0.630″
x 0.630″
x 0.630″
x 0.220″
x 0.220″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z14
Z15
Z16
Z17
PCB
0.045″ x 0.220″ Microstrip
0.755″ x 0.080″ Microstrip
0.496″ x 0.080″ Microstrip
0.384″ x 0.080″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair Rite
C1, C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2
8.2 pF Chip Capacitor
ATC100B8R2BT500XT
ATC
C3, C11
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4, C5
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C6
20 K pF Chip Capacitor
ATC200B203KT50XT
ATC
C7, C16, C17, C18
10 μF, 35 V Tantalum Chip Capacitors
T491D106K035AT
Kemet
C8, C9
10 pF Chip Capacitors
ATC100B7R5JT500XT
ATC
C10
11 pF Chip Capacitor
ATC100B110JT500XT
ATC
C12
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15
0.56 μF, 50 V Chip Capacitor
C1825C564J5GAC
Kemet
C19
470 μF, 63 V Electrolytic Capacitor
ESME630ELL471MK25S
United Chemi - Con
L1, L2
12.5 nH Inductors
A04T - 5
Coilcraft
MRFE6S9130HR3 MRFE6S9130HSR3
RF Device Data
Freescale Semiconductor
3
C19
B2
900 MHz
Rev 02
C7
C6
C16 C17 C18
C15
B1
C4
C8
L1
C14
L2
C1
C2
C3
C5
CUT OUT AREA
C10
C12
C9
C13
C11
Figure 2. MRFE6S9130HR3(SR3) Test Circuit Component Layout
MRFE6S9130HR3 MRFE6S9130HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
32
Gps, POWER GAIN (dB)
19
30
Gps
18.5
VDD = 28 Vdc, Pout = 27 W (Avg.), IDQ = 950 mA
N−CDMA IS−95 Pilot, Sync, Paging, Traffic
Codes 8 Through 13
18
17.5
17
28
26
−20
−30
IRL
16.5
−40
ACPR
16
−50
ALT1
15.5
−60
15
820
840
860
880
900
920
940
960
−70
980
−5
−15
−25
−35
−45
−55
IRL, INPUT RETURN LOSS (dB)
19.5
ηD, DRAIN
EFFICIENCY (%)
34
ηD
ACPR (dBc), ALT1 (dBc)
20
f, FREQUENCY (MHz)
ηD
41
38
35
−10
−20
−30
−40
VDD = 28 Vdc, Pout = 54 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync
Paging, Traffic Codes 8 Through 13
16.5
16
15.5
IRL
15
14.5
14
ACPR
13.5
13
−50
−60
−70
ALT1
820
840
860
880
900
920
940
960
0
−5
−10
−15
−20
−25
−30
980
IRL, INPUT RETURN LOSS (dB)
50
47
44
Gps
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
19
18.5
18
17.5
17
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg.
21
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1400 mA
Gps, POWER GAIN (dB)
20
1100 mA
19
950 mA
18
700 mA
17
500 mA
16
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
−20
IDQ = 500 mA
−30
700 mA
1400 mA
−40
−50
1100 mA
950 mA
−60
15
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9130HR3 MRFE6S9130HSR3
RF Device Data
Freescale Semiconductor
5
0
60
VDD = 28 Vdc, Pout = 130 W (PEP)
IDQ = 950 mA, Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
IM3 −L
−30
−40
IM5 −L
IM3 −U
IM5 −U
IM7 −U
−50
P6dB = 52.95 dBm (197.24 W)
59
Pout, OUTPUT POWER (dBm)
58
Ideal
57
P3dB = 52.26 dBm (168.27 W)
56
55
P1dB = 51.15 dBm
(130.31 W)
54
53
Actual
52
VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
51
IM7 −L
−60
1
50
10
31
60
32
33
34
35
36
37
38
39
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TWO −TONE SPACING (MHz)
60
−20
VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz
N−CDMA IS−95, Pilot, Sync, Paging
Traffic Codes 8 Through 13
50
−30
40
−40
ACPR
30
ηD
−50
ALT1
TC = −30_C −60
20
Gps
85_C
10
−70
25_C
0
1
10
100
−80
200
40
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
21
70
25_C
Gps
TC = −30_C
−30_C 60
25_C
19
85_C
85_C
18
40
17
30
16
15
14
1
50
20
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
ηD
10
100
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
10
0
400
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6S9130HR3 MRFE6S9130HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
20
18
MTTF (HOURS)
Gps, POWER GAIN (dB)
19
17
32 V
16
28 V
VDD = 24 V
15
107
106
IDQ = 950 mA
f = 880 MHz
105
14
0
50
100
150
200
250
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 30.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
..........................................
..................
. . . .
...
..
..
...
..
..
.
..
..
..
...
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
..
Integrated BW
Integrated BW
.
.
.
.
.
.
...
.
..
.
...
.
.
.
.
.
...........
.
.
.
.
.
.........
...................
....
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.....
....
............
..................
.........
..........
...
.......
...........
........
.
...........
........
.
.
..
.
.
.
.
..
.
...............
.
....
.
..
.
.
.
.
.
.
.
..
....
.
. ...........
−ACPR
in
30
kHz
+ACPR
in
30
kHz
.
.
.
.
.
.
...
..
........
.
.............
.
.
.
.
.
...
...............
Integrated BW
Integrated BW
..
......
.....
.................
...........
........
.......
...
−100
PEAK −TO−AVERAGE (dB)
Figure 13. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5
−0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 14. Single - Carrier N - CDMA Spectrum
MRFE6S9130HR3 MRFE6S9130HSR3
RF Device Data
Freescale Semiconductor
7
f = 910 MHz
Zload
f = 850 MHz
Zo = 2 Ω
f = 910 MHz
Zsource
f = 850 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.89 - j1.18
1.50 - j0.09
865
0.87 - j1.03
1.52 + j0.11
880
0.85 - j0.89
1.55 + j0.31
895
0.83 - j0.75
1.60 + j0.51
910
0.84 - j0.64
1.68 + j0.71
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRFE6S9130HR3 MRFE6S9130HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRFE6S9130HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRFE6S9130HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRFE6S9130HR3 MRFE6S9130HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
April 2007
Description
• Initial Release of Data Sheet
MRFE6S9130HR3 MRFE6S9130HSR3
10
RF Device Data
Freescale Semiconductor
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