FREESCALE MRF6S27085HSR3

Freescale Semiconductor
Technical Data
Document Number: MRF6S27085H
Rev. 1, 1/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S27085HR3
MRF6S27085HSR3
Designed for N- CDMA base station applications with frequencies from 2600
to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =
900 mA, Pout = 20 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 23.5%
ACPR @ 885 kHz Offset — - 48 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2700 MHz, 20 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27085HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27085HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
85
W
Symbol
Value (1,2)
Unit
CW Operation
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 85 W CW
Case Temperature 76°C, 20 W CW
RθJC
0.50
0.56
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.21
0.3
Vdc
gfs
—
5.3
—
S
Crss
—
2.8
—
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg. N - CDMA,
f = 2630 MHz and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
14
15.5
17
dB
Drain Efficiency
ηD
22
23.5
—
%
ACPR
—
- 48
- 45
dBc
IRL
—
- 13
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S27085HR3 MRF6S27085HSR3
2
RF Device Data
Freescale Semiconductor
L1
B1
VBIAS
+
+
C11
C10
B2
C9
C8
C3
C4
C5
+
+
C6
C7
VSUPPLY
R1
Z9
Z1
RF
INPUT
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10 Z11 Z12 Z13 Z14 Z15
Z16
C2
RF
OUTPUT
DUT
0.672″
0.050″
0.288″
0.200″
0.270″
0.260″
0.366″
0.083″
0.091″
x 0.081″
x 0.250″
x 0.081″
x 0.480″
x 0.172″
x 0.810″
x 0.490″
x 0.490″
x 0.753″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.287″ x 0.753″ Microstrip
0.220″ x 0.384″ Microstrip
0.122″ x 0.580″ Microstrip
0.266″ x 0.148″ Microstrip
0.130″ x 0.425″ Microstrip
0.380″ x 0.081″ Microstrip
0.703″ x 0.081″ Microstrip
Arlon GX - 0300 - 5022, 0.030″, εr = 2.5
Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Bead (0805)
2508051107Y0
Fair - Rite
B2
Bead, Surface Mount
2743019447
Fair - Rite
C1, C2
4.7 pF Chip Capacitors, B Case
100B4R7CP500X
ATC
C3
3.6 pF Chip Capacitor, B Case
100B3R6CP500X
ATC
C4
10 µF, 50 V Chip Capacitor (2220)
GRM55DR61H106KA88B
Murata
C5, C8
2.2 µF, 50 V Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C6
47 µF, 50 V Electrolytic Capacitor
MVK50VC47RM8X10TP
Nippon
C7
330 µF, 63 V Electrolytic Capacitor
NACZF331M63V
Nippon
C9
0.01 µF Chip Capacitor (1825)
C1825C103J1RAC
Kemet
C10
22 µF, 25 V Tantalum Capacitor
ECS - T1ED226R
Panasonic TE Series
C11
47 µF, 16 V Tantalum Capacitor
T491D476K016AS
Kemet
L1
15 nH, Chip Inductor
L0603150GGW
AVX
R1
3.3 W, 1/4 W Chip Resistor (1210)
ERJ - 14YJ3R3U
Dale/Vishay
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
3
C7
C5
C11 C10
B2
C4
R1
C3
C6
B1* L1*
C8*
C9*
C2
CUT OUT AREA
C1
MRF6S27085
Rev. 3
* Components stacked
Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout
MRF6S27085HR3 MRF6S27085HSR3
4
RF Device Data
Freescale Semiconductor
24
23
15.6 1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01%
15.4 Probability (CCDF)
22
Gps
−42
IRL
−46
15.2
15
−50
ACPR
14.8
−54
ALT1
14.6
−58
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
ηD
16 VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 900 mA, Single−Carrier N−CDMA
15.8
ACPR (dBc), ALT1 (dBc)
25
16.2
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−10
−12
−14
−16
−18
−20
−22
−24
−26
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
15
14.8
Gps
1.2288 MHz Channel Bandwidth 34
Peak/Avg. = 9.8 dB @ 0.01%
32
Probability (CCDF)
14.6
14.4
−32
IRL
−36
14.2
14
ACPR
−40
13.8
−44
ALT1
13.6
−48
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
−10
−12
−14
−16
−18
−20
−22
−24
−26
IRL, INPUT RETURN LOSS (dB)
38
VDD = 28 Vdc, Pout = 45 W (Avg.)
IDQ = 900 mA, Single−Carrier N−CDMA 36
ηD
ACPR (dBc), ALT1 (dBc)
15.2
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ 20 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ 45 Watts Avg.
18
IDQ = 1340 mA
Gps, POWER GAIN (dB)
17
1240 mA
16
900 mA
15
675 mA
14
13
440 mA
12
VDD = 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
1
10
100
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
−30
VDD = 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
1340 mA
IDQ = 440 mA
−40
1240 mA
−50
900 mA
−60
675 mA
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
5
0
56
VDD = 28 Vdc, Pout = 85 W (PEP), IDQ = 900 mA
Two−Tone Measurements, Center Frequency = 2645 MHz
55
Pout, OUTPUT POWER (dBm)
−10
−20
−30
3rd Order
−40
5th Order
−50
7th Order
−60
0.1
Ideal
P3dB = 51.72 dBm (148.54 W)
54
53
P1dB = 51 dBm (126.74 W)
52
Actual
51
50
49
VDD = 28 Vdc, IDQ = 900 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 2645 MHz
48
47
46
1
10
100
30
32
31
33
34
35
36
37
38
39
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
45
40
35
40
−30
ACPR
VDD = 28 Vdc, IDQ = 900 mA, f = 2645 MHz
Single−Carrier N−CDMA, 1.2288 MHz
Channel Bandwidth, Peak/Avg. = 9.8 dB
@ 0.01% Probability (CCDF)
−35
ηD
−40
−45
ALT1
30
−50
25
−55
20
Gps
15
−60
10
−65
ACPR (dBc), ALT1 (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−70
100
5
10
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. Single - Carrier N - CDMA ACPR, ALT1,
Power Gain and Drain Efficiency versus Output
Power
20
15
35
12.5
30
10
25
7.5
20
5
15
2.5
ηD
VDD = 28 Vdc, IDQ = 900 mA
f = 2645 MHz
0
10
10
5
100
15
Gps, POWER GAIN (dB)
40
Gps
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17.5
16
45
32 V
14
28 V
13
20 V 24 V
12
16 V
VDD = 12 V
11
1
IDQ = 900 mA
f = 2645 MHz
10
100
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF6S27085HR3 MRF6S27085HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200
210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS
N - CDMA TEST SIGNAL
100
−10
1.2288 MHz
Channel BW
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01%
Probability on CCDF.
0.01
0.001
−60
−70
−80
−ACPR @ 30 kHz
Integrated BW
−90
0.0001
0
2
4
6
8
10
+ACPR @ 30 kHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 13. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 14. Single - Carrier N - CDMA Spectrum
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
7
Zsource
f = 2700 MHz
Zload
f = 2600 MHz
f = 2600 MHz
f = 2700 MHz
Zo = 10 Ω
VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2600
8.55 - j5.42
5.86 - j4.34
2610
8.31 - j5.30
5.69 - j4.26
2620
8.21 - j5.10
5.64 - j4.15
2630
8.21 - j4.85
5.67 - j4.00
2640
8.26 - j4.57
5.72 - j3.83
2645
8.40 - j4.43
5.80 - j3.75
2650
2660
8.44 - j4.32
8.78 - j4.29
5.86 - j3.70
6.10 - j3.72
2670
8.94 - j4.59
6.19 - j4.00
2680
8.88 - j5.01
6.07 - j4.36
2690
8.57 - j5.18
5.80 - j4.48
2700
8.36 - j5.10
5.71 - j4.47
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S27085HR3 MRF6S27085HSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S27085HR3 MRF6S27085HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
M
T A
B
M
M
M
ccc
M
T A
M
aaa
M
T A
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
CASE 465 - 06
ISSUE F
NI - 780
MRF6S27085HR3
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE F
NI - 780S
MRF6S27085HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
11
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or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
 Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF6S27085HR3 MRF6S27085HSR3
Document Number: MRF6S27085H
Rev. 1, 1/2005
12
RF Device Data
Freescale Semiconductor