FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11445-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS08314A-80L TM FEATURES • • • • • • Pseudo SRAM with Single Data Rate (SDR) Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3 Burst Mode Function Multiplexed Address and Data Bus Asynchronous Mode Capability High-speed Data Transfer Rate _____ • • • _____ Byte Control by B3 to B0 Various Power Down Mode Sleep 32 Mbit Partial 64 Mbit Partial 128 Mbit Partial Shipping Form : Wafer and Chip MAIN SPECIFICATIONS Part Number MB82DBS08314A-80L Organization 8 M WORD × 32 BIT × 32 Multiplexed Address and Data Bus I/O Bus Configuration Interface Single Data Rate (SDR) Supply Voltage 1.7 V to 1.95 V Burst Frequency (Max.) 100 MHz Data Transfer Rate CLK Access Time (Max.) 400M byte / s RL=8, 7 7 ns Active Current (Max.) 40 mA Standby Current (Max.) 250 μA Power Down Current (Max.) Sleep 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2006-2007 FUJITSU LIMITED All rights reserved