FUJITSU MB82DBS08314A-80L

FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
NP05-11445-2E
256 Mbit Mobile FCRAM
1.8 V, SDR Burst Mode
MB82DBS08314A-80L
TM
FEATURES
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Pseudo SRAM with Single Data Rate (SDR) Burst Interface
Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3
Burst Mode Function
Multiplexed Address and Data Bus
Asynchronous Mode Capability
High-speed Data Transfer Rate
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Byte Control by B3 to B0
Various Power Down Mode
Sleep
32 Mbit Partial
64 Mbit Partial
128 Mbit Partial
Shipping Form : Wafer and Chip
MAIN SPECIFICATIONS
Part Number
MB82DBS08314A-80L
Organization
8 M WORD × 32 BIT
× 32 Multiplexed Address and Data Bus
I/O Bus Configuration
Interface
Single Data Rate (SDR)
Supply Voltage
1.7 V to 1.95 V
Burst Frequency (Max.)
100 MHz
Data Transfer Rate
CLK Access Time (Max.)
400M byte / s
RL=8, 7
7 ns
Active Current (Max.)
40 mA
Standby Current (Max.)
250 μA
Power Down Current (Max.)
Sleep
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
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Copyright©2006-2007 FUJITSU LIMITED All rights reserved