FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11444-2E 256 Mbit Mobile FCRAM 1.8 V, DDR Burst Mode MB82DDS08314A-75L TM FEATURES • • • • • • • • Pseudo SRAM with Double Data Rate (DDR) Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 4 DDR Burst Mode Function Multiplexed Address and Data Bus Short Initial Latency High-speed Data Transfer Rate Various Power Down Mode Sleep 32 Mbit Partial 64 Mbit Partial 128 Mbit Partial Shipping Form : Wafer and Chip MAIN SPECIFICATIONS Part Number MB82DDS08314A-75L Organization 8 M WORD × 32 BIT × 32 Multiplexed Address and Data Bus I/O Bus Configuration Interface Double Data Rate (DDR) Supply Voltage 1.75 V to 1.95 V Burst Frequency (Max.) 135 MHz Data Transfer Rate 1G byte / s _______ Data Access Time from CLK & CLK (Max.) 6 ns Active Current (Max.) 40 mA Standby Current (Max.) 250 μA Power Down Current (Max.) Sleep 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2006-2007 FUJITSU LIMITED All rights reserved