FUJITSU MB82DDS08314A-75L

FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
NP05-11444-2E
256 Mbit Mobile FCRAM
1.8 V, DDR Burst Mode
MB82DDS08314A-75L
TM
FEATURES
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Pseudo SRAM with Double Data Rate (DDR) Burst Interface
Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 4
DDR Burst Mode Function
Multiplexed Address and Data Bus
Short Initial Latency
High-speed Data Transfer Rate
Various Power Down Mode
Sleep
32 Mbit Partial
64 Mbit Partial
128 Mbit Partial
Shipping Form : Wafer and Chip
MAIN SPECIFICATIONS
Part Number
MB82DDS08314A-75L
Organization
8 M WORD × 32 BIT
× 32 Multiplexed Address and Data Bus
I/O Bus Configuration
Interface
Double Data Rate (DDR)
Supply Voltage
1.75 V to 1.95 V
Burst Frequency (Max.)
135 MHz
Data Transfer Rate
1G byte / s
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Data Access Time from CLK & CLK (Max.)
6 ns
Active Current (Max.)
40 mA
Standby Current (Max.)
250 μA
Power Down Current (Max.)
Sleep
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
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Copyright©2006-2007 FUJITSU LIMITED All rights reserved