FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11451-2E TM 32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus MB82DBS02154E-70L FEATURES • • • • Pseudo SRAM with Single Data Rate (SDR) Burst Interface COSMORAM (Common Specifications for Mobile RAM ) Revision 3 16 bit Multiplexed Address and Data Bus Asynchronous Mode Capability _____ • • • • ______ Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial 16 Mbit Partial Chip / Wafer Business MAIN SPECIFICATIONS Part Number MB82DBS02154E-70L Organization 2 M Word × 16 bit I/O Bus Configuration Multiplexed Address and Data Bus Supply Voltage 1.7 V to 1.95 V Burst Frequency (Max.) RL＝7 104 MHz CLK Access Time (Max.) RL＝7 7 ns _____ CE1 Access Time (Max.) 70 ns Active Current (Max.) 30 mA Standby Current (Max.) 120 μA Power Down Current (Max.) Sleep 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2007 FUJITSU LIMITED All rights reserved