FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11450-2E TM 32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode MB82DBS02163E-70L FEATURES • • • • Pseudo SRAM with Asynchronous / Synchronous SRAM Interface COSMORAM (Common Specifications for Mobile RAM ) Revision 2 Burst Mode Function (Synchronous Operation) 8 Words Page Read Access Capability _____ • • • • ______ Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial Chip / Wafer Business MAIN SPECIFICATIONS Part Number MB82DBS02163E-70L Organization 2 M Word × 16 bit Supply Voltage 1.7 V to 1.95 V Burst Frequency (Max.) RL＝6 CLK Access Time (Max.) RL＝5, 6 83 MHz 8 ns Page Address Access Time (Max.) 20 ns Address Access Time (Max.) 70 ns Active Current (Max.) 30 mA Standby Current (Max.) 120 μA Power Down Current (Max.) Sleep 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2007 FUJITSU LIMITED All rights reserved