MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE CM100DU-12F ¡IC ................................................................... 100A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 94 80 ±0.25 4 G1E1 12 4 4 11 18 E2 G2 C1 E2 C2E1 2–φ6.5 MOUNTING HOLES 23 27 24 24 CM 48 23 24 17 13 7 13.5 2.5 16 TAB #110. t=0.5 RTC C2E1 C1 E2 LABEL 21.2 +1 30 –0.5 RTC G1 E1 25 7.5 16 2.5 E2 G2 3–M5NUTS 12mm deep CIRCUIT DIAGRAM Sep.2000 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 600 ±20 100 200 100 200 350 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 (Note 2) (Note 2) Charged part to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value Unit V V A A A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Rth(c-f) Rth(j-c’)Q RG Contact thermal resistance — — — — — — — — — — — — — — — — — — 6.3 — 1.6 1.6 — — — 620 — — — — — 1.9 — — — 0.07 — — 20 2.2 — 27 1.8 1 — 100 80 300 250 150 — 2.6 0.35 0.70 — µA VCE(sat) VGE = VCES, VCE = 0V Tj = 25°C IC = 100A, VGE = 15V Tj = 125°C Thermal resistance*1 Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 300V, I C = 100A, VGE = 15V VCC = 300V, IC = 100A VGE1 = VGE2 = 15V RG = 6.3Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied *2 (1/2 module) Tc measured point is just under the chips 0.28 *3 63 mA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep.2000 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 160 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 11 10 Tj=25°C VGE=20V 9.5 9 120 8.5 80 40 8 7.5 0.5 1 1.5 2 2.5 3 3.5 3 VGE = 15V 2.5 2 1.5 1 0 4 Tj = 25°C Tj = 125°C 0.5 0 40 80 120 160 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 7 5 3 IC = 200A 2 IC = 100A 1 IC = 40A 6 8 10 12 14 16 18 102 7 5 3 2 101 7 5 3 2 100 20 Tj = 25°C 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 103 7 5 7 5 3 2 3 2 Cies 101 7 5 3 2 100 7 5 3 2 200 103 Tj = 25°C 4 0 CAPACITANCE Cies, Coes, Cres (nF) 0 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0 Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) 200 td(off) tf 102 7 5 3 2 101 7 5 3 2 td(on) tr Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Sep.2000 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE 102 7 5 trr Irr 3 2 101 7 5 Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 25°C 3 2 100 0 10 2 5 7 101 3 2 3 5 7 102 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.35°C/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.7°C/ W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 18 IC = 100A VCC = 200V 16 14 VCC = 300V 12 10 8 6 4 2 0 0 100 300 500 700 900 GATE CHARGE QG (nC) Sep.2000