MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES ●High breakdown voltage (BVCEO> 50V) ●High-current driving (Ic(max) = 400mA) ●Active L-level input IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND APPLICATIONS Interfaces between microcomputers and high-voltage, high-current drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces. 9 8 OUTPUT VCC Package type 16P2X-B CIRCUIT DIAGRAM FUNCTION The M54566 is produced by adding PNP transistors to M54522 inputs. Seven circuits having active L-level inputs are provided. Resistance of 8kΩ is provided between each input and PNP transistor base. The input emitters are connected to VCC pin (pin 9). Output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum. These ICs are optimal for drivers that are driven with NMOSIC output and absorb collector current. VCC 20K INPUT OUTPUT 2.7K 8K 7.2K 3K GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature Conditions Output , H Current per circuit output, L Ta = 25℃, when mounted on board Ratings 10 – 0.5 ～ + 50 400 – 0.5 ～ VCC 1.00 – 20 ～ + 75 – 55 ～ + 125 Unit V V mA V W ℃ ℃ Jul-2011 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol Parameter Limits typ 5 max 8 VCC Supply voltage min 4 VO Output voltage 0 － 50 Duty Cycle no more than 6% 0 － 350 Duty Cycle no more than 20% 0 － 200 VCC-0.2 － － VCC VCC－3 Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) VCC=5V IC VIH VIL Unit V V mA “H” input voltage “L” input voltage 0 V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃） Symbol Parameter V(BR)CEO VCE(sat) II ICC hFE Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Supply current (one circuit coming on) DC amplification factor min ICEO = 100μA IC = 350mA IC = 200mA VI = VCC－3V VI = VCC－3.5V VCC = 5V, VI = VCC－3.5V VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25℃ Limits typ＊ Unit max 50 － － － － － 1.1 0.9 －0.3 2.2 1.6 －0.58 mA － 1.4 3.0 mA 2000 10000 － － V V *：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃） Symbol Parameter Limits Test conditions min ton Turn－on time toff Turn－off time CL = 15pF（note 1） VCC Measured device max － － ｎｓ － 2500 － ｎｓ TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Unit typ 95 VO INPUT RL 50% 50% OUTPUT PG 50Ω OUTPUT CL 50% ｔon 50% ｔoff (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 1 to 4V (2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jul-2011 2 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector current Characteristics Thermal Derating Factor Characteristics 2.0 400 Collector current IC(mA) Power dissipation Pd(W) VCC=4V VI=1V 1.5 M54566DP 1.0 0.5 0 0 25 50 75 200 Ta=25℃ Ta=-20℃ 100 0 0.5 1.0 1.5 2.0 Output saturation voltage VCE(sat)(V) Duty-Cycle-Collector current Characteristics 500 Collector current IC(mA) Duty-Cycle-Collector current Characteristics 500 ① 400 300 ② 200 ③ 100 ④ ⑤ ⑥ ⑦ 0 10 •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 25℃ 0 4 7 5 20 60 40 80 ① 300 200 ② •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 75℃ 100 0 20 60 40 80 ③ ④ ⑤ ⑥ ⑦ 100 Duty cycle (%) Duty cycle (%) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 400 VCC=4V VCE=4V 3 Ta=75℃ 2 10 400 0 100 Collector current IC(mA) Collector current IC(mA) Ta=75℃ 0 100 Ambient temperature Ta(℃) DC amplification factor hFE 300 Ta=25℃ Ta=-20℃ 3 7 5 3 VCC=4V VCE=4V 300 Ta=75℃ Ta=25℃ 200 Ta=-20℃ 100 2 10 2 1 10 2 3 5 7 10 2 2 3 5 7 10 0 3 0 0.4 0.8 1.2 1.6 Supply voltage-Input voltage VCC-VI(V) Collector current IC(mA) Jul-2011 3 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY Supply Current Characteristics Input Characteristics 5 -1.0 Supply current ICC(mA) Input current II(mA) -0.8 -0.6 Ta=-20℃ Ta=25℃ -0.4 Ta=75℃ -0.2 0 VI=0V VCC=8V 0 1 2 3 4 4 Ta=-20℃ 3 2 Ta=75℃ 1 0 5 Ta=25℃ 0 2 4 6 8 10 Supply Voltage VCC(V) Supply voltage-Input voltage VCC-VI(V) Jul-2011 4 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP PRELIMINARY 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY PACKAGE OUTLINE Jul-2011 5