MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES INPUT ●High breakdown voltage (BVCEO> 50V) ●High-current driving (Ic(max) = 400mA) ●Active L-level input IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND APPLICATION 9 8 OUTPUT VCC Package type 16P4X Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces CIRCUIT DIAGRAM VCC FUNCTION The M54566 is produced by adding PNP transistors to M54522 inputs. Seven circuits having active L-level inputs are provided. Resistance of 8kW is provided between each input and PNP transistor base. The input emitters are connected to VCC pin (pin 9). Output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum. These ICs are optimal for drivers that are driven with N-MOS IC output and absorb collector current. 20K INPUT OUTPUT 2.7K 8K 7.2K 3K GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board 1/4 Ratings Unit 10 –0.5 ～ +50 400 –0.5 ～ VCC 1.47 –20 ～ +75 –55 ～ +125 V V mA V W ℃ ℃ '09-01 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7- UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING Symbol VCC VO VIH VIL min Limits typ max 4 0 5 － 8 50 0 － 350 0 － 200 VCC-0.2 0 － － VCC VCC-3 Parameter Supply voltage Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage “L” input voltage IC CONDITIONS VCC=5V Duty Cycle no more than 10% VCC=5V Duty Cycle no more than 30% Unit V V mA V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol V(BR)CEO VCE(sat) II Collector-emitter voltage Collector-emitter voltage breakdown saturation Input current Supply current (one circuit coming on) DC amplification factor ICC hFE min Limits typ * max ICEO = 100μA 50 — — VI = VCC - 3V, IC = 350mA VI = VCC - 3V, IC = 200mA VI = VCC – 3.5V — — — 1.1 0.9 -0.3 2.2 1.6 -0.58 mA VCC=5V, VI=VCC-3.5V — 1.4 3.0 mA 2000 10000 — — Parameter Test conditions VCE = 4V, VCC=5V, IC = 350mA, Ta = 25℃ Unit V V * : The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1） Limits typ max — — 95 2500 — — Unit ｎｓ ｎｓ TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT min VCC Measured device VO INPUT 50% 50% RL OUTPUT PG OUTPUT 50Ω CL 50% ｔon (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 1 to 4V (2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes 2/4 50% ｔoff MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7- UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics Output Saturation Voltage 2.0 400 M54566WP 1.5 Collector current IC(mA) Power dissipation Pd(W) VCC=4V VI=1V 1.0 0.5 0 0 25 50 75 300 Ta=75℃ 200 Ta=25℃ Ta=-20℃ 100 0 100 0 Ambient temperature Ta(℃) Duty-Cycle-Collector Characteristics 400 ① ② 300 ③ ④ ⑤ ⑥ ⑦ 200 •The collector current values represent the current per circuit. 100 •Repeated frequency ≧ 10Hz Collector current IC(mA) Collector current IC(mA) 2.0 Duty-Cycle-Collector Characteristics 300 ② 20 60 40 •The collector current values represent the current per circuit. 100 •Repeated frequency ≧ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 75℃ 80 0 100 0 20 60 40 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 4 7 ③ ④ ⑤ ⑥ ⑦ 200 •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 25℃ 0 ① Duty cycle (%) 400 VCC=4V VCE=4V VCC=4V VCE=4V 5 3 Collector current IC(mA) DC amplification factor hFE 1.5 500 400 10 1.0 Output saturation voltage VCE(sat)(V) 500 0 0.5 Ta=75℃ 2 Ta=25℃ Ta=-20℃ 10 3 7 5 3 300 Ta=75℃ Ta=25℃ 200 Ta=-20℃ 100 2 10 2 1 10 2 3 5 7 10 2 2 3 5 7 10 3 Collector current Ic(mA) 0 0 0.4 0.8 1.2 1.6 Supply voltage-Input voltage VCC-VI(V) 3/4 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7- UNIT 400mA DARLINGTON TRANSISTOR ARRAY Supply Current Characteristics Input Characteristics 5 -1.0 4 Supply current ICC(mA) Input current II(mA) -0.8 -0.6 Ta=-20℃ Ta=25℃ -0.4 Ta=75℃ -0.2 0 VI=0V VCC=8V 0 1 2 3 4 3 Ta=25℃ 2 Ta=75℃ 1 0 5 Ta=-20℃ 0 2 4 6 Supply Voltage VCC(V) Supply voltage-Input voltage VCC-VI(V) 4/4 8 10