MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63830P/FP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63830P/FP 4-channel sinkdriver, consists of 4 PNP and 8 NPN transistors connected to from four high current gain driver pairs. FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 1.5A) ● 3V micro computer series compatible input ● With clamping diodes ● With input diode ● Wide operating temperature range (Ta = –40 to +85°C) PIN CONFIGURATION VCC 1 16 COM COMMON OUTPUT1 O1 2 15 O4 OUTPUT4 INPUT1 IN1 3 14 IN4 INPUT4 4 13 5 12 INPUT2 IN2 6 11 OUTPUT2 O2 7 10 O3 OUTPUT3 VCC 8 9 COM COMMON GND GND IN3 INPUT3 16P4(P) Package type 16P2N-A(FP) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. CIRCUIT DIAGRAM FUNCTION The M63830FP/P is transistor-array of high active level four units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between the input and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 4 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 1.5A and are rated for operation with output voltage up to 50V. ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI VR Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Clamping diode reverse voltage Clamping diode forward current Pd Power dissipation Operating temperature Storage temperature COM INPUT OUTPUT 3.5K 760 5.5K 3K GND The four circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –40 ~ +85°C) IF Topr Tstg VCC 22K Conditions Output, H Current per circuit output, L Pulse width ≤ 10ms, duty cycle ≤ 5% Pulse width ≤ 100ms, duty cycle ≤ 5% Ta = 25°C, when mounted on board Ratings 7 –0.5 ~ +50 1.5 –0.5 ~ VCC 50 1.5 1.0 1.92(P)/1.00(FP) –40 ~ +85 –55 ~ +125 Unit V V A V V A W °C °C Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63830P/FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –40 ~ +85°C) Limits Parameter VCC VO Supply voltage Output voltage IC Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) VIH VIL min 2.7 Unit max 0 typ 3.0 — VCC = 3V, Duty Cycle P : no more than 5% FP : no more than 2% 0 — 1.25 VCC = 3V, Duty Cycle P : no more than 15% FP : no more than 7% 0 — 0.7 — — VCC-2.2 3.6 V V 50 A VCC-0.5 “H” input voltage “L” input voltage 0 VCC V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol Parameter Limits Test conditions min 50 — — — — — — — 4000 V (BR) CEO ICC Collector-emitter breakdown voltage ICEO = 100µA Supply current (AN only Input) VCC = 3.6V, VI = 0.5V VCC = 2.7V, VI = 0.5V, IC = 1.25A VCE(sat) Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 0.7A VI = VCC-2.2V II Input current VI = VCC-3.6V IR Clamping diode reverse current VR = 50V VF Clamping diode forward volltage IF = 1.25A, VCC open hFE DC amplification factor VCC = 2.7V, VCE = 2V, IC = 1A, Ta = 25°C ✽ : Typical values are at Ta = 25°C SWITCHING CHARACTERISTICS Symbol ton V mA V mA µA V — Limits Test conditions CL = 15pF (note 1) min — typ 190 max — — 5300 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Unit max — 5.0 2.2 1.7 –0.6 –0.95 100 2.3 — (Unless otherwise noted, Ta = 25°C) Parameter Turn-on time Turn-off time toff typ ✽ — 3.7 1.4 1.0 –0.22 –0.60 — 1.5 30000 VCC VO INPUT 50% Measured device 50% RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 8.3Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63830P/FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 2.0 1.6 M63830P Vcc=2.7V V I=0.5V Collector current Ic (A) Power dissipation Pd(max) (W) 1.92 1.5 M63830FP 1.0 0.998 0.520 0.5 1.2 0.8 Ta=85°C 0.4 Ta=25°C Ta=–40°C 0 0 25 50 75 85 0 100 0 Ambient temperature Ta (°C) 2.0 1 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 20 60 80 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneouslyoperated circuit. •Vcc = 3V •Ta = 85°C 1.5 1.0 1 0.5 2 3 4 0 100 0 20 40 60 80 Duty cycle (%) Duty Cycle-Collector Characteristics (M63830FP) Duty Cycle-Collector Characteristics (M63830FP) 2.0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 1.5 1.0 1 0.5 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 85°C 1.5 1.0 0.5 1 2 3 4 0 0 100 Duty cycle (%) 2.0 Collector current Ic (A) 40 2 3 4 Collector current Ic (A) 1.0 Collector current Ic (A) Collector current Ic (A) 1.5 0 2.0 Duty Cycle-Collector Characteristics (M63830P) 2.0 0 1.5 Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63830P) 0.5 1.0 0.5 20 40 60 Duty cycle (%) 80 100 2 3 4 0 0 20 40 60 80 100 Duty cycle (%) Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63830P/FP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 105 1.6 3 2 VCC=2.7V VCE=2V Collector current Ic (A) DC amplification factor hFE 7 VCC=2.7V 5 VCE=2V Ta=85°C 104 7 5 Ta=25°C 3 2 Ta=–40°C 103 7 5 1.2 0.8 Ta=85°C Ta=25°C 0.4 Ta=–40°C 3 2 0 102 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 0 0.5 1.0 1.5 Collector current IC (mA) Input voltage Vcc-VI (V) Input Characteristics Clamping Diode Characteristics –0.6 2.0 2.0 VCC=3V Forward bias current IF (A) Input Current II (mA) –0.5 –0.4 –0.3 Ta=85°C –0.2 Ta=25°C –0.1 1.5 1.0 Ta=25°C 0.5 Ta=–40°C Ta=85°C Ta=–20°C 0 0 1 2 3 Input voltage Vcc-VI (V) 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Driver Supply Characteristics 20.0 Supply Current Icc (mA) VI=0.5V 16.0 Ta=25°C 12.0 Ta=–40°C 8.0 Ta=85°C 4.0 0 0 2 4 6 8 10 Supply voltage Vcc (V) Sep. 2001