MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor integrated circuits perform high-current driving with extremely low input-current supply. Production lineup has been newly expanded with the addition of 225mil (GP) package. M63826P and M63826FP have the same pin connection as M54526P and M54526FP. (Compatible with M54526P and M54526FP) More over, the features of M63826P and M63826FP are equal or superior to those of M54526P and M54526FP. PIN CONFIGURATION INPUT IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 8 9 OUTPUT →COM COMMON 16P4(P) 16P2N-A(FP) Package type 16P2S-A(GP) FEATURES ● Three package configurations (P, FP and GP) ● Pin connection Compatible with M54526P and M54526FP ● ● ● ● ● High breakdown voltage (BVCEO ≥ 50V) High-current driving (IC(max) = 500mA) With clamping diodes Driving available with PMOS IC output of 8-18V Wide operating temperature range (Ta = –40 to +85°C) CIRCUIT DIAGRAM COM OUTPUT INPUT 10.5k APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 7.2k 3k GND The seven circuits share the COM and GND FUNCTION The M63826P, M63826FP and M63826GP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collectoremitter supply voltage is 50V maximum.The M63826FP and M63826GP is enclosed in molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg The diode, indicated with the dotted line, is parasitic, and cannot be used. (Unless otherwise noted, Ta = –40 ~ +85°C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Unit : Ω Ratings –0.5 ~ +50 500 –0.5 ~ +30 500 50 Ta = 25°C, when mounted on board 1.47(P)/1.00(FP)/0.80(GP) –40 ~ +85 –55 ~ +125 Unit V mA V mA V W °C °C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VO Limits Parameter Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) IC VIH VIL Duty Cycle P : no more than 8% FP : no more than 5% GP : no more than 4% Duty Cycle P : no more than 30% FP : no more than 20% GP : no more than 15% min 0 typ — max 50 0 — 400 Unit V mA 0 — “H” input voltage 5 — 25 “L” input voltage 0 — 0.5 200 V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE(sat) II VF IR h FE Limits Test conditions ICEO = 100µA II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA II = 250µA, IC = 100mA Input current VI = 10V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, I C = 350mA min 50 — — — — typ — 1.2 1.0 0.9 0.9 max — 1.6 1.3 1.1 1.4 — — 1000 1.4 — 2500 2.0 100 — Unit V V mA V µA — SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Symbol ton toff Parameter Limits Test conditions Turn-on time Turn-off time CL = 15pF (note 1) NOTE 1 TEST CIRCUIT min — typ 15 max — — 350 — Unit ns ns TIMING DIAGRAM INPUT Vo INPUT Measured device 50% 50% RL OPEN OUTPUT PG OUTPUT 50Ω 50% 50% CL ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VP = 8VP-P (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 2.0 500 M63826FP 1.0 0.744 M63826GP 0.520 0.418 0.5 0 25 75 85 50 300 200 Ta = 25°C 100 2 3 200 •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 80 4 5 6 7 1 300 2 200 100 0 100 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 0 20 40 60 80 Duty cycle (%) Duty Cycle-Collector Characteristics (M63826FP) Duty Cycle-Collector Characteristics (M63826FP) 3 4 5 6 7 100 500 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 Duty cycle (%) 80 3 4 5 6 7 100 Collector current Ic (mA) 1 300 0 400 Duty cycle (%) 400 0 2.0 500 500 100 1.5 Duty Cycle-Collector Characteristics (M63826P) 300 0 1.0 0.5 Duty Cycle-Collector Characteristics (M63826P) 1 100 0 Output saturation voltage VCE(sat) (V) 400 0 0 100 Ta = –40°C Ambient temperature Ta (°C) 500 Collector current Ic (mA) 400 Ta = 85°C 0 Collector current Ic (mA) Collector current Ic (mA) M63826P 1.5 Collector current Ic (mA) Power dissipation Pd(max) (W) II = 500µA 400 300 1 200 2 3 4 •The collector current values 5 represent the current per circuit. 76 •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 0 0 20 40 60 80 100 Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63826GP) Duty Cycle-Collector Characteristics (M63826GP) 500 400 1 300 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 3 4 5 6 7 20 0 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 500 200 2 100 20 40 60 80 100 DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 500 VCE = 4V Ta = 85°C 2 103 Ta = –40°C 7 5 Ta= 25°C 3 400 300 200 Ta = 85°C Ta = 25°C 100 2 Ta = –40°C 2 3 5 7 102 2 0 5 7 103 3 0 1 2 3 4 Collector current IcC (mA) Input voltage VI (V) Input Characteristics Clamping Diode Characteristics 5 500 3 Ta = –40°C 2 Ta = 25°C 1 Ta = 85°C 0 5 10 15 Input voltage VI (V) 20 25 Forward bias current IF (mA) 4 0 3 4 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C Duty cycle (%) Collector current Ic (mA) DC amplification factor hFE 1 Duty cycle (%) 3 102 101 Input Current II (mA) 300 0 0 100 104 7 5 400 400 300 200 Ta = 25°C 100 Ta = 85°C 0 0 0.5 Ta = –40°C 1.0 1.5 2.0 Forward bias voltage VF (V) Jan. 2000