MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES ● Four package configurations (P, FP, GP and KP) ● Medium breakdown voltage (BVCEO ≥ 35V) ● Synchronizing current (IC(max) = 300mA) ● With clamping diodes ● With zener diodes ● Low output saturation voltage ● Wide operating temperature range (Ta=–40 to +85°C) IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 8 OUTPUT →COM COMMOM 9 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) Package type CIRCUIT DIAGRAM COM OUTPUT Vz=7V APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND The seven circuits share the COM and GND. FUNCTION The M63812P, M63812FP, M63812GP and M63812KP each have seven circuits consisting of NPN transistor.A spikekiller clamping diode is provided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. ABSOLUTE MAXIMUM RATINGS Symbol The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω (Unless otherwise noted, Ta = –40 ~ +85°C) Parameter Conditions VCEO Collector-emitter voltage Output, H IC VI Collector current Current per circuit output, L IF VR Input voltage Clamping diode forward current Clamping diode reverse voltage Pd Power dissipation Topr Tstg Operating temperature Storage temperature Ta = 25°C, when mounted on board M63812P M63812FP M63812GP M63812KP Ratings Unit –0.5 ~ +35 300 V mA –0.5 ~ +35 300 V mA 35 1.47 V 1.00 0.80 W 0.78 –40 ~ +85 –55 ~ +125 °C °C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VO Parameter Limits Test conditions Output voltage Duty Cycle no more than 45% M63812P Collector current (Current per 1 cirIC Duty Cycle no more than 100% Duty Cycle no more than 30% M63812FP Duty Cycle no more than 100% Duty Cycle no more than 24% cuit when 7 circuits are coming on simultaneously) M63812GP Duty Cycle no more than 100% Duty Cycle no more than 24% M63812KP Duty Cycle no more than 100% VIN Input voltage min typ max 0 0 — — 35 250 0 0 0 0 — — — — 160 250 130 250 0 0 0 0 — — — — 120 250 120 30 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE(sat) VIN(on) VR IR h FE Limits Test conditions ICEO = 10µA IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA “On” input voltage IIN = 1mA, IC = 10mA min 35 — — 13 typ — — — 19 max — 0.2 0.8 23 Clamping diode forward volltage Clamping diode reverse current DC amplification factor — — 50 1.2 — — 2.0 10 — IF = 250mA VR = 35V VCE = 10V, IC = 10mA Unit V V V V µA — SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter ton Turn-on time toff Turn-off time Limits Test conditions CL = 15pF (note 1) min typ max — 140 — — 240 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Vo 50% Measured device 50% INPUT RL OPEN PG OUTPUT 50% 50Ω CL 50% OUTPUT ton toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 18V (2)Input-output conditions : RL=220Ω,Vo=35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Input Characteristics Thermal Derating Factor Characteristics 4 M63812P 1.5 1.0 Input current II (mA) Power dissipation Pd (W) 2.0 M63812FP M63812GP 0.744 M63812KP 0.520 0.418 0.406 0.5 0 0 25 75 85 50 5 10 15 20 25 Input voltage VI (V) Duty-Cycle-Collector Characteristics (M63812P) Duty-Cycle-Collector Characteristics (M63812P) 30 400 1~4 5 6 7 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 1 0 0 100 300 1~2 3 4 200 100 0 100 0 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M63812FP) Duty-Cycle-Collector Characteristics (M63812FP) 400 100 400 1~3 300 4 5 6 7 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) Collector current Ic (mA) Ta = 25°C Ta=25 2 Ambient temperature Ta (°C) 300 0 Ta = –40°C Ta=85°C 400 0 3 300 1 2 200 100 0 0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 20 40 60 80 3 4 5 6 7 100 Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63812GP/KP) 400 300 1~2 3 4 5 6 7 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 Duty Cycle-Collector Characteristics (M63812GP/KP) IB = 3mA 60 80 100 Ta = 25°C VI = 32V IB = 1.5mA IB = 1mA 50 0.2 0.4 0.6 Collector current Ic (mA) Collector current Ic (mA) 40 100 IB = 2mA 80 VI = 28V VI = 24V VI = 20V 60 VI = 16V VI = 12V 40 20 0 0.8 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics DC Amplification Factor Collector Current Characteristics 103 100 Ta = –40°C DC amplification factor hFE II = 2mA Collector current Ic (mA) 20 Output Saturation Voltage Collector Current Characteristics IB = 0.5mA Ta = 25°C Ta = 85°C 60 40 20 0 0 Output Saturation Voltage Collector Current Characteristics 100 0 3 4 56 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 Duty cycle (%) 150 80 2 200 Duty cycle (%) Ta = 25°C 0 0 1 0 100 250 200 300 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) 7 5 VCE 10V Ta = 25°C 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics Grounded Emitter Transfer Characteristics 50 250 VCE = 4V 40 30 Ta = 25°C 20 Ta = 85°C Ta = –40°C 10 0 0 2 4 6 8 10 12 Collector current Ic (mA) Collector current Ic (mA) VCE = 4V 200 150 Ta = 25°C Ta = 85°C 100 Ta = –40°C 50 0 0 4 8 12 16 20 Input voltage VI (V) Input voltage VI (V) Clamping Diode Characteristics Forward bisa current IF (mA) 250 200 150 Ta = 85°C 100 Ta = 25°C Ta = –40°C 50 0 0 0.4 0.8 1.2 1.6 2.0 Forward bias voltage VF (V) Jan. 2000