MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63834FP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY DESCRIPTION The M63834FP/KP 8-channel sinkdriver, consists of 8 PNP and 16 NPN transistors connected to from eight high current gain driver pairs. PIN CONFIGURATION FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● 3V micro computer compatible input ● “L” active level input ● With input diode ● Wide operating temperature range (Ta = –40 to +85°C) NC 1 20 NC IN1 2 19 O1 IN2 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 IN7 8 13 O7 IN8 9 12 O8 GND 10 11 VCC INPUT OUTPUT 20P2N-A(FP) Package type 20P2E-A(KP) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. NC : No connection CIRCUIT DIAGRAM FUNCTION The M63834GP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 8 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. ABSOLUTE MAXIMUM RATINGS Parameter VCC 20K INPUT OUTPUT 3.5K 1.05K 7.2K 3K GND The eight circuits share the Vcc and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VCC Supply voltage Conditions VCEO IC VI Collector-emitter voltage Collector current Input voltage Output, H Current per circuit output, L Pd Topr Tstg Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings 7 –0.5 ~ +50 500 –0.5 ~ VCC 1.10(FP)/0.68(KP) –40 ~ +85 –55 ~ +125 Unit V V mA V W °C °C Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63834FP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VCC (Unless otherwise noted, Ta = –40 ~ +85°C) Limits Parameter min 2.7 typ max 3.0 3.6 Duty Cycle FP : no more than 4% KP : no more than 2% 0 — 400 Duty Cycle FP : no more than 15% KP : no more than 6% 0 Supply voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) IC VIH VIL Unit V mA VCC-0.5 “H” input voltage “L” input voltage 0 — 200 — — VCC-2.2 VCC V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol V (BR) CEO VCE(sat) II ICC hFE Parameter Limits Test conditions min 50 — — — — 2000 Collector-emitter breakdown voltage ICEO = 100µA VCC = 2.7V, VI = 0.5V, IC = 400mA Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 200mA Input current VI = VCC-2.2V Supply current (AN only Input) VCC = 3.6V, VI = 0.5V DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C typ ✽ — 1.15 0.93 –220 2.6 10000 Unit max — 2.4 1.6 –600 4.0 — V V µA mA — ✽ : Typical values are at Ta = 25°C SWITCHING CHARACTERISTICS Symbol ton Parameter Turn-on time Turn-off time toff (Unless otherwise noted, Ta = 25°C) CL = 15pF (note 1) min — typ 120 max — — 4500 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VCC VO INPUT Measured device 50% 50% RL OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63834FP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 Vcc=2.7V VI=0.5V Collector current Ic (mA) Power dissipation Pd(max) (W) 2.0 1.5 M63834FP 1.10 1.0 M63834KP 0.68 0.572 0.5 0.354 0 0 25 50 75 85 400 300 200 Ta=25°C 100 Ta=85°C 0 100 0 Ta=–20°C 1.0 0.5 1.5 2.0 Ambient temperature Ta (°C) Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63834FP) Duty Cycle-Collector Characteristics (M63834FP) 500 500 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 100 0 0 Collector current Ic (mA) 500 20 40 60 80 3 4 5 6 7 8 1 200 2 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 85°C 100 0 20 40 60 80 3 4 5 6 7 8 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63834KP) Duty Cycle-Collector Characteristics (M63834KP) 500 1 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 0 300 Duty cycle (%) 300 0 400 0 100 400 100 Collector current Ic (mA) 300 20 40 60 Duty cycle (%) 80 3 4 5 6 7 8 100 Collector current Ic (mA) Collector current Ic (mA) 1 400 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 85°C 400 300 1 200 2 3 45 6 87 100 0 0 20 40 60 80 100 Duty cycle (%) Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63834FP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY DC Amplification Factor Collector Current Characteristics Output Current Characteristics 500 7 VCE=2V 5 3 2 VCE=2V Collector current IC (mA) DC amplification factor hFE 105 Ta=85°C 104 7 5 3 2 Ta=–40°C 103 7 5 3 2 Ta=25°C 102 1 10 2 5 7 102 3 2 3 400 300 Ta=25°C 200 Ta=–40°C 100 0 5 7 103 Ta=85°C 0 0.8 1.2 1.6 2.0 Input voltage Vcc-VI (V) Collector current IC (mA) Driver Supply Characteristics Input Characteristics 20.0 –0.6 VI=0.5V VCC=3V Supply Current Icc (mA) –0.5 Input Current II (mA) 0.4 –0.4 –0.3 Ta=85°C –0.2 Ta=25°C –0.1 16.0 12.0 Ta=25°C Ta=–40°C 8.0 4.0 Ta=85°C Ta=–40°C 0 0 1 2 Input voltage Vcc-VI (V) 3 0 0 2 4 6 8 10 Supply voltage Vcc (V) Sep. 2001