MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES Á High breakdown voltage (BV CEO ≥ 50V) Á High-current driving (Ic(max) = 400mA) Á Active L-level input Á Wide operating temperature range (Ta = –20 to +75°C) APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 OUTPUT IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 8 9 VCC 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM VCC 20K OUTPUT 2.7K INPUT 8K 7.2K FUNCTION The M54566 is produced by adding PNP transistors to M54222 inputs. Seven circuits having active L-level inputs are provided. Resistance of 8kΩ is provided between each input and PNP transistor base. The input emitters are connected to VCC pin (pin 9). Output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum. These ICs are optimal for drivers that are driven with N-MOS IC output and absorb collector current. The M54566FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Symbol VCC Supply voltage VCEO IC Collector-emitter voltage Collector current Output, H Current per circuit output, L VI Pd Input voltage Power dissipation Ta = 25°C, when mounted on board Topr Operating temperature Storage temperature Tstg Parameter 3K Conditions Ratings 10 Unit V –0.5 ~ +50 V mA 400 –0.5 ~ VCC V W 1.47(P)/1.00(FP) –20 ~ +75 °C –55 ~ +125 °C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –20 ~ +75°C) min Limits typ 4 0 5 — 8 V 50 V 0 — 350 0 — 200 VCC –0.2 — 0 — VCC VCC –3 Parameter Supply voltage VCC VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) IC VIH VCC = 5V, Duty Cycle P : no more than 10% FP : no more than 6% VCC = 5V, Duty Cycle P : no more than 30% FP : no more than 20% “H” input voltage “L” input voltage VIL ELECTRICAL CHARACTERISTICS Unit max mA V V (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage Limits Test conditions VCE (sat) Collector-emitter saturation voltage II Input current ICC h FE Supply current (one circuit coming on) DC amplification factor min 50 ICEO = 100µA VI = VCC –3V, IC = 350mA typ+ — Unit max — V VI = VCC –3V, IC = 200mA — — 1.1 0.9 2.2 1.6 VI = VCC –3.5V VCC = 5V, V I = VCC –3.5V — — –0.38 1.4 –0.58 3.0 mA mA 2000 10000 — — VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C V + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton Parameter Turn-on time Turn-off time toff CL = 15pF (note 1) NOTE 1 TEST CIRCUIT INPUT Limits Test conditions min — typ 95 max — — 2500 — Unit ns ns TIMING DIAGRAM VCC VO INPUT Measured device 50% 50% RL OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 1 to 4V (2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 400 2.0 Collector current Ic (mA) Power dissipation Pd (W) VCC = 4V VI = 1V M54566P 1.5 M54566FP 1.0 0.5 0 0 25 50 75 0 0.5 1.0 1.5 2.0 Duty-Cycle-Collector Characteristics (M54566P) 500 300 ➂ ➃ ➄ ➅ ➆ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 25°C 100 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 100 Duty-Cycle-Collector Characteristics (M54566P) ➀ 400 300 ➁ ➂ ➃ ➄➅ ➆ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 75°C 100 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54566FP) Duty-Cycle-Collector Characteristics (M54566FP) 100 500 ➀ 400 300 ➁ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 25°C 0 20 40 60 Duty cycle (%) 80 ➂ ➃ ➄ ➅ ➆ 100 Collector current Ic (mA) 500 Collector current Ic (mA) Ta = 25°C Output saturation voltage VCE (sat) (V) ➀ ➁ 0 Ta = –20°C Ambient temperature Ta (°C) 400 100 Ta = 75°C 200 0 100 500 0 300 400 ➀ 300 200 100 0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •VCC = 5V •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 0 20 40 60 80 ➁ ➂ ➃ ➄ ➅ ➆ 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics 104 5 Ta = 25°C Ta = 75°C 3 Ta = –20°C 2 103 7 5 3 Collector current Ic (mA) Vcc = 4V VCE = 4V 7 DC amplification factor hFE Grounded Emitter Transfer Characteristics 400 Vcc = 4V VCE = 4V Ta = 75°C 300 Ta = 25°C Ta = –20°C 200 100 2 102 1 10 2 3 5 7 102 2 0 5 7 103 3 Collector current Ic (mA) 0 Vcc = 8V Supply current Icc (mA) Input current II (mA) –0.8 Ta = –20°C Ta = 25°C –0.4 Ta = 75°C –0.2 0 0 1 2 3 1.2 1.6 Supply Current Characteristics 5 –0.6 0.8 Supply voltage-Input voltage VCC–VI (V) Input Characteristics –1.0 0.4 4 5 Supply voltage-Input voltage VCC–VI (V) VI = 0V 4 Ta = –20°C 3 Ta = 25°C Ta = 75°C 2 1 0 0 2 4 6 8 10 Supply voltage VCC (V) Aug. 1999