MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band Low Noise Amplifier.(LNA) . Vd1 Vd2 Vd3 In FEATURES Out RF frequency : 24.0 to 27.0 GHz Vg1 Vg2 Vg3 Super Low Noise NF=2.5dB (TYP.) Single voltage operation PHOTOGRAPH ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Parameter Values Unit Vd Drain bias voltage 5 V Id Drain bias current 30 mA Vg Gate bias voltage - V Pin Maximum peak input power overdrive (Duration < 1sec) TBD dBm Ta Operating temperature range TBD ˚C TARGET SPECIFICATIONS (Ta=25˚C) Limits Symbol Fop Gain Parameter Test conditions Min. Typ. Max. Operating frequency 24.0 range 17.0 Small signal gain On-wafer 27.0 dB 1.5 dB Delta gain NF Noise figure VSWR in Input VSWR 2.5:1 VSWR out Output VSWR 2.5:1 P1dB Output IP3 Output power at 1 dB compression Output power at 3rd- Vd Id Vg 2.5 (5) Freq=22GHz TBD Vd=5V,Id=30mA (17) TBD 5 order intercept point Drain bias voltage Drain bias current Gate bias voltage 30 No need MITSUBISHI ELECTRIC GHz 18.0 Small signal gain flatness measurement Unit dB dBm dBm V mA V as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µm) 2194 1700 900 150 1400 150 150 400 150 Vd1a Vd1b Vd2a Vd2b Vd3aVd3b GND GND GND GND RF-out RF-in GND GND Vg1 Vg2 Vg3 106 480 775 1430 2300 MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 5.0 V, Id = 30 mA, Ta = 25 ˚C ) NF 25 10 20 8 15 6 10 4 VSWR in 5 2 VSWR out 0 22 0 23 24 25 26 27 28 Frequency (GHz) MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier AN EXAMPLE OF TEST CIRCUIT 5V 5V 5V :Chip capacitor (39pF) Cb Vd1a Vd1b Cb Vd2a Vd2b Cb Vd3a Vd3b Cb > 100µF GND GND GND RF-out RF-in GND GND Vg1 GND Vg2 *1 *2 Vg3 *1 *2 *1 Length of bonding wire < 200 µm *2 Number of bonding wire ≥ 3 MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier AN EXAMPLE OF TEST CIRCUIT 2.5V 2.5V Cb 2.5V Cb :Chip capacitor (39pF) Cb Cb > 100µF Vd1a Vd1b Vd2a Vd2b Vd3a Vd3b GND GND GND RF-out RF-in GND GND Vg1 GND Vg2 *1 *2 Vg3 *1 *2 *1 Length of bonding wire < 200 µm *2 Number of bonding wire ≥ 3 MITSUBISHI ELECTRIC as of July '98