MITSUBISHI MGFC5108

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5108
Notice : This is not a final specification
Some parametric limits are subject to change.
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
BLOCK DIAGRAM
The MGFC5108 is a GaAs MMIC chip
especially designed for 24.0 ~ 27.0 GHz band
Low Noise Amplifier.(LNA) .
Vd1
Vd2
Vd3
In
FEATURES
Out
RF frequency : 24.0 to 27.0 GHz
Vg1
Vg2
Vg3
Super Low Noise NF=2.5dB (TYP.)
Single voltage operation
PHOTOGRAPH
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5
V
Id
Drain bias current
30
mA
Vg
Gate bias voltage
-
V
Pin
Maximum peak input power overdrive (Duration < 1sec)
TBD
dBm
Ta
Operating temperature range
TBD
˚C
TARGET SPECIFICATIONS (Ta=25˚C)
Limits
Symbol
Fop
Gain
Parameter
Test conditions
Min.
Typ.
Max.
Operating frequency
24.0
range
17.0
Small signal gain
On-wafer
27.0
dB
1.5
dB
Delta gain
NF
Noise figure
VSWR in
Input VSWR
2.5:1
VSWR out
Output VSWR
2.5:1
P1dB
Output IP3
Output power at 1 dB
compression
Output power at 3rd-
Vd
Id
Vg
2.5
(5)
Freq=22GHz
TBD
Vd=5V,Id=30mA
(17)
TBD
5
order intercept point
Drain bias voltage
Drain bias current
Gate bias voltage
30
No need
MITSUBISHI
ELECTRIC
GHz
18.0
Small signal gain flatness
measurement
Unit
dB
dBm
dBm
V
mA
V
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5108
Notice : This is not a final specification
Some parametric limits are subject to change.
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µm)
2194
1700
900
150
1400
150
150
400 150
Vd1a Vd1b
Vd2a Vd2b
Vd3aVd3b
GND GND
GND
GND
RF-out
RF-in
GND
GND
Vg1
Vg2
Vg3
106
480
775
1430
2300
MITSUBISHI
ELECTRIC
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5108
Notice : This is not a final specification
Some parametric limits are subject to change.
Ka-Band 3-Stage Self Bias Low Noise Amplifier
TYPICAL CHARACTERISTICS
Small Signal Performances
(Vd = 5.0 V, Id = 30 mA, Ta = 25 ˚C )
NF
25
10
20
8
15
6
10
4
VSWR in
5
2
VSWR out
0
22
0
23
24
25
26
27
28
Frequency (GHz)
MITSUBISHI
ELECTRIC
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5108
Notice : This is not a final specification
Some parametric limits are subject to change.
Ka-Band 3-Stage Self Bias Low Noise Amplifier
AN EXAMPLE OF TEST CIRCUIT
5V
5V
5V
:Chip capacitor (39pF)
Cb
Vd1a Vd1b
Cb
Vd2a Vd2b
Cb
Vd3a Vd3b
Cb > 100µF
GND
GND
GND
RF-out
RF-in
GND
GND
Vg1
GND
Vg2
*1
*2
Vg3
*1
*2
*1 Length of bonding wire < 200 µm
*2 Number of bonding wire ≥ 3
MITSUBISHI
ELECTRIC
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5108
Notice : This is not a final specification
Some parametric limits are subject to change.
Ka-Band 3-Stage Self Bias Low Noise Amplifier
AN EXAMPLE OF TEST CIRCUIT
2.5V
2.5V
Cb
2.5V
Cb
:Chip capacitor (39pF)
Cb
Cb > 100µF
Vd1a Vd1b
Vd2a Vd2b
Vd3a Vd3b
GND
GND
GND
RF-out
RF-in
GND
GND
Vg1
GND
Vg2
*1
*2
Vg3
*1
*2
*1 Length of bonding wire < 200 µm
*2 Number of bonding wire ≥ 3
MITSUBISHI
ELECTRIC
as of July '98