MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5218 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band High Power Amplifier (MPA) . Vg1 Vg2 Vd1 Vd2 FEATURES RF frequency : 18.0 to 19.0 GHz P1dB : ≥ 29.0 dBm(min.) @ 18.0 to 19.0 GHz In Out Vd1 Vg1 Vg2 Vd1 Vd2 Chip size: 1940 µm x 2000 µm TARGET SPECIFICATIONS (Ta=25˚C) Symbol Parameter IDSS1 Drain Saturation Current IDSS2 Drain Saturation Current Test Conditions Min. Vd=3.0V Limits Typ. Max. Unit mA 720 mA 1440 Vd=3.0V,Id=0.6mA -2.0 -1.0 V Pinch Off Voltage Vd=3.0V,Id=1.2mA -2.0 -1.0 V P1dB Output Power at 1 dB Compression Point f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA*, 29.0 Gain Gain Vp1 Vp2 Pinch Off Voltage Id2=720mA* Input Return Loss Input Return Loss Output Return Loss IM3 Output Return Loss Inter Modulation Level f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA*, Id2=720mA* Pout=TBD TBD dBm 15.0 dB 8.0 dB 8.0 dB dBc *:Ids at RF off MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µM) Vg2 (-0.2 to -1.0 V) Vd1 Vg1 (-0.2 to -1.0 V) GND GND RF-in Vd1 GND Vg1 Vd2 RF-out GND Vd1 Vg2 Vd2 130 275 990 975 1535 1940 MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS S-Parameter vs. Frequency (Vd = 5 V) 15 S21 10 5 0 -5 -10 S11 S22 -15 -20 14 16 18 20 Frequency [GHz] 22 24 Output Power Performances (Vd = 5 V) 34 33 32 31 30 29 28 27 26 14 16 18 20 Frequency [GHz] MITSUBISHI ELECTRIC 22 24 as of July '98