NEC NE72118-T1

PRELIMINARY DATA SHEET
C TO X BAND AMPLIFIER
C TO X BAND OSC
N-CHANNEL GaAs MESFET
FEATURES
NE72118
PACKAGE DIMENSIONS (Units in mm)
•
HIGH POWER GAIN:
Gs = 5.5 dB TYP at f = 12 GHz
•
GATE LENGTH: Lg = 0.8 µm (recessed gate)
2.1 ± 0.2
•
GATE WIDTH: Wg = 330 µm
1.25 ± 0.1
•
4 PINS SUPER MINI MOLD
•
TAPE & REEL PACKAGING
(1.3) 0.3 -0.05
NEC's stringent quality assurance and test procedures ensure
the highest reliability performance.
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
+0.1
0 to 0.1
+0.1
0.15 -0.05
0.9 ± 0.1
0.3
4
1
0.4
+0.1
-0.05
The NE72118 is a high performance gallium arsenide metal
semiconductor field effect transistor (MESFET), housed in a
low cost plastic surface mount package (SOT 23 style). This
device's low phase noise and high fT make it an excellent
choice for oscillator applications on a digital LNB (Low Noise
Block).
0.3 -0.05
0.65
(1.25)
0.60
DESCRIPTION
V53
2.0 ± 0.2
+0.1
+0.1
0.3 -0.05
2
3
PACKAGE OUTLINE 18
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE72118
18
UNITS
MIN
TYP
MAX
IGSO
Gate to Source Leak Current at VGS = -5 V
µA
1.0
10
IDSS
Saturated Drain Current at VDS = 3 V, VGS = 0 V
µA
30
60
100
V
-0.5
-2.0
-4.0
mS
20
VGS (OFF)
Gate to Source Cut off Voltage at VDS = 3 V, ID = 100 µA
gm
Transconductance at VDS = 3 V, ID = 30 mA
PN
Phase Noise at VDS=3 V, ID=30mA, f=11GHz,100KHz offset dBc/Hz
-110
40
Phase Noise at VDS=3 V, ID=30mA, f=11GHz, 10KHz offset dBc/Hz
-85
Gs
Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz
dB
5.5
Po (1dB)
Output Power at 1 dB Gain Compression Point at
VCE = 3 V, ID = 30 mA, f = 12 GHz
dBm
13.5
California Eastern Laboratories
NE72118
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Source Voltage
V
5.0
VGS
Gate to Source Voltage
V
-6.0
VGD
Gate to Drain Voltage
V
-6.0
Drain Current
mA
IDSS
PTOT
Total Power Dissipation
mW
250
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-65 to +125
ID
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE72118-T1
3K/Reel
NE72118-T2
3K/Reel
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
400
Drain Current, ID (mA)
Total Power Dissipation, PTOT (mW)
500
300
200
VGS = 0 V
60
40
VGS = -0.5 V
20
100
VGS = -1.0 V
0
50
150
100
200
250
Ambient Temperature, TA (°C)
80
VDS = 3 V
60
40
20
0
-4.0
-2.0
Gate to Source Volatge, VGS (V)
0
1
2
3
4
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Drain Current, ID (mA)
80
0
5
NE72118
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 3 V, ID = 10 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.922
0.864
0.784
0.709
0.658
0.623
0.597
0.613
0.677
0.749
0.797
0.839
0.877
0.909
0.934
0.928
0.920
-46.8
-66.8
-89.8
-116.1
-140.5
-164.0
171.4
146.3
125.6
107.4
90.8
78.4
65.7
51.9
43.9
40.2
31.7
2.257
2.171
2.125
2.049
1.927
1.780
1.639
1.545
1.450
1.297
1.117
0.959
0.811
0.636
0.483
0.376
0.306
134.5
116.4
97.4
77.5
58.5
40.2
23.3
6.5
-12.0
-31.1
-48.8
-65.1
-82.3
-99.1
-111.1
-118.6
-125.6
0.067
0.089
0.104
0.110
0.107
0.101
0.095
0.100
0.117
0.136
0.147
0.159
0.164
0.157
0.145
0.136
0.126
58.5
47.7
37.0
25.3
17.8
13.2
12.7
16.8
16.3
10.0
1.6
-8.4
-20.8
-33.1
-42.7
-49.3
-55.8
0.667
0.627
0.591
0.545
0.481
0.416
0.358
0.323
0.284
0.251
0.295
0.395
0.499
0.577
0.643
0.733
0.795
-27.5
-39.0
-49.5
-58.9
-68.0
-80.0
-92.8
-109.6
-137.3
-178.5
138.4
107.9
85.8
68.3
54.4
44.4
39.5
K
MAG1
0.38
0.50
0.65
0.83
1.08
1.38
1.72
1.70
1.37
1.13
1.07
0.95
0.83
0.79
0.75
0.86
0.97
17.86
14.86
12.57
10.79
10.84
8.79
7.42
7.03
7.31
7.58
7.19
5.67
5.79
5.42
4.97
3.43
2.18
(dB)
VDS = 3 V, ID = 20 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.907
0.838
0.752
0.675
0.627
0.591
0.570
0.592
0.666
0.742
0.794
0.838
0.880
0.914
0.939
0.935
0.920
-49.0
-69.9
-93.4
-120.3
-144.7
-168.0
167.6
143.3
123.6
105.8
89.6
77.7
65.3
51.1
43.3
39.5
30.8
2.672
2.534
2.437
2.318
2.155
1.972
1.803
1.695
1.594
1.429
1.239
1.073
0.913
0.723
0.552
0.431
0.350
133.0
114.7
95.8
76.0
57.5
39.6
23.2
7.0
-11.0
-29.9
-47.1
-63.6
-81.1
-98.1
-110.5
-118.9
-124.9
0.061
0.081
0.093
0.098
0.096
0.095
0.093
0.104
0.125
0.144
0.157
0.168
0.173
0.166
0.153
0.141
0.134
58.3
48.6
38.1
29.5
24.3
21.6
22.7
24.6
22.4
13.7
4.7
-5.6
-18.0
-31.7
-40.2
-48.1
-57.2
0.637
0.594
0.561
0.521
0.459
0.394
0.337
0.307
0.269
0.226
0.260
0.365
0.476
0.552
0.617
0.707
0.788
-27.5
-38.8
-48.8
-57.4
-65.3
-76.3
-88.8
-104.8
-132.2
-173.8
139.7
107.7
85.9
69.2
55.1
44.5
39.6
K
MAG1
0.43
0.56
0.72
0.91
1.15
1.43
1.72
1.58
1.23
1.03
0.98
0.89
0.77
0.71
0.68
0.76
0.86
18.30
15.23
13.00
11.31
11.13
9.29
7.97
7.66
8.19
8.85
6.49
6.50
6.78
6.60
6.17
4.73
3.20
(dB)
NE72118
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 3 V, ID = 30 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
S21
S12
K
MAG1
0.44
0.59
0.76
0.96
1.19
1.44
1.66
1.50
1.12
0.93
0.89
0.80
0.68
0.62
0.60
0.67
0.82
18.76
15.62
13.35
11.69
11.46
9.76
8.46
8.17
9.05
7.33
7.06
7.14
7.67
7.68
7.28
5.80
3.89
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.900
0.826
0.734
0.657
0.609
0.577
0.558
0.581
0.659
0.739
0.794
0.840
0.888
0.923
0.944
0.941
0.922
-50.1
-71.2
-94.9
-121.9
-146.2
-169.5
166.5
142.6
123.3
105.9
89.9
77.8
65.3
51.2
43.3
39.4
30.8
2.906
2.733
2.611
2.466
2.286
2.084
1.899
1.789
1.688
1.522
1.324
1.150
0.983
0.781
0.596
0.465
0.374
132.3
114.0
95.2
75.7
57.4
39.8
23.7
7.8
-10.0
-28.8
-46.2
-62.6
-80.4
-97.6
-110.4
-119.0
-125.9
0.058
0.074
0.086
0.088
0.089
0.089
0.091
0.104
0.130
0.152
0.164
0.177
0.183
0.175
0.157
0.147
0.136
58.4
49.0
39.8
32.6
28.1
27.6
30.1
31.9
27.7
18.4
8.5
-2.9
-16.4
-29.8
-39.7
-47.1
-54.5
0.640
0.596
0.563
0.524
0.468
0.407
0.354
0.323
0.285
0.238
0.260
0.359
0.469
0.549
0.621
0.712
0.787
-27.1
-38.2
-47.6
-55.7
-63.2
-74.0
-85.7
-101.4
-127.2
-167.1
145.9
112.2
89.2
71.6
56.4
45.5
40.0
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.894
0.817
0.725
0.647
0.600
0.569
0.550
0.571
0.653
0.737
0.799
0.846
0.895
0.931
0.956
0.949
0.932
-50.6
-72.0
-95.7
-122.6
-146.6
-170.0
166.1
142.5
123.9
106.6
90.5
78.3
65.9
51.6
43.6
39.4
30.6
3.050
2.858
2.716
2.556
2.368
2.156
1.968
1.855
1.760
1.602
1.398
1.215
1.045
0.827
0.630
0.487
0.386
132.1
113.7
95.0
75.8
57.7
40.2
24.2
8.7
-9.0
-27.9
-45.5
-62.3
-80.3
-98.1
-111.4
-120.5
-127.2
0.053
0.068
0.078
0.080
0.079
0.082
0.086
0.104
0.134
0.159
0.176
0.188
0.195
0.186
0.169
0.158
0.144
59.6
49.2
41.5
33.7
34.1
34.0
37.9
40.5
35.6
24.5
13.2
1.8
-12.7
-26.9
-38.4
-47.0
-53.2
0.660
0.615
0.582
0.546
0.495
0.440
0.394
0.366
0.329
0.279
0.282
0.368
0.477
0.562
0.635
0.724
0.792
-26.6
-37.0
-46.0
-53.7
-61.2
-71.7
-82.9
-97.4
-121.7
-158.0
157.2
120.6
95.3
75.6
59.3
47.5
41.7
(dB)
VDS = 3 V, ID = 40 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
S21
S12
S22
K
MAG1
(dB)
0.44
0.61
0.79
1.00
1.24
1.45
1.63
1.41
1.00
0.82
0.76
0.71
0.59
0.53
0.48
0.53
0.69
19.16
15.97
13.72
14.83
11.83
10.21
8.96
8.73
10.81
7.85
7.69
7.79
8.52
8.73
8.84
6.97
4.84
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
EXCLUSIVE NORTH AMERICAN AGENT FOR
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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PRINTED IN USA ON RECYCLED PAPER -6/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE