TI SN74AUC2G32DCUR

SCES478A − AUGUST 2003 − REVISED NOVEMBER 2003
D Available in the Texas Instruments
D
D
D
D
D
D
D
D
DCT OR DCU PACKAGE
(TOP VIEW)
NanoStar and NanoFree Packages
Optimized for 1.8-V Operation and Is 3.6-V
I/O Tolerant to Support Mixed-Mode Signal
Operation
Ioff Supports Partial-Power-Down Mode
Operation
Sub 1-V Operable
Max tpd of 1.5 ns at 1.8 V
Low Power Consumption, 10 µA at 1.8 V
±8-mA Output Drive at 1.8 V
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
− 2000-V Human-Body Model (A114-A)
− 200-V Machine Model (A115-A)
− 1000-V Charged-Device Model (C101)
1A
1B
2Y
GND
1
8
2
7
3
6
4
5
VCC
1Y
2B
2A
YEP OR YZP PACKAGE
(BOTTOM VIEW)
GND
2Y
1B
1A
4 5
3 6
2 7
1 8
2A
2B
1Y
VCC
description/ordering information
This dual 2-input positive-OR gate is operational at 0.8-V to 2.7-V VCC, but is designed specifically for 1.65-V
to 1.95-V VCC operation.
The SN74AUC2G32 performs the Boolean function Y + A ) B or Y + A • B in positive logic.
NanoStar and NanoFree package technology is a major breakthrough in IC packaging concepts, using the
die as the package.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
For more information about AUC Little Logic devices, please refer to the TI application report, Applications of
Texas Instruments AUC Sub-1-V Little Logic Devices, literature number SCEA027.
ORDERING INFORMATION
ORDERABLE
PART NUMBER
PACKAGE†
TA
NanoStar − WCSP (DSBGA)
0.23-mm Large Bump − YEP
−40°C to 85°C
NanoFree − WCSP (DSBGA)
0.23-mm Large Bump − YZP (Pb-free)
TOP-SIDE
MARKING‡
SN74AUC2G32YEPR
Tape and reel
_ _ _UG_
SN74AUC2G32YZPR
SSOP − DCT
Tape and reel
SN74AUC2G32DCTR
U32_ _ _
VSSOP − DCU
Tape and reel
SN74AUC2G32DCUR
U32_
† Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available
at www.ti.com/sc/package.
‡ DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and
one following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition
(1 = SnPb, • = Pb-free).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar and NanoFree are trademarks of Texas Instruments.
Copyright  2003, Texas Instruments Incorporated
! "#$ %!&
% "! "! '! ! !( !
%% )*& % "!+ %! !!$* $%!
!+ $$ "!!&
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1
SCES478A − AUGUST 2003 − REVISED NOVEMBER 2003
FUNCTION TABLE
(each gate)
INPUTS
A
B
OUTPUT
Y
H
X
H
X
H
H
L
L
L
logic diagram (positive logic)
1A
1B
2A
2B
1
7
2
5
6
3
1Y
2Y
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 3.6 V
Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 3.6 V
Voltage range applied to any output in the high-impedance or power-off state, VO
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 3.6 V
Output voltage range, VO (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to VCC + 0.5 V
Input clamp current, IIK (VI < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
Output clamp current, IOK (VO < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
Continuous output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA
Continuous current through VCC or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100 mA
Package thermal impedance, θJA (see Note 2): DCT package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C/W
DCU package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227°C/W
YEP/YZP package . . . . . . . . . . . . . . . . . . . . . . . . . . . 102°C/W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. The package thermal impedance is calculated in accordance with JESD 51-7.
2
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SCES478A − AUGUST 2003 − REVISED NOVEMBER 2003
recommended operating conditions (see Note 3)
VCC
VIH
Supply voltage
VCC = 0.8 V
VCC = 1.1 V to 1.95 V
High-level input voltage
0.8
2.7
V
0
0
3.6
V
0
VCC
−0.7
V
VCC = 0.8 V
VCC = 1.1 V
IOL
Low-level output current
∆t/∆v
V
0.7
Output voltage
High-level output current
V
0.35 × VCC
Input voltage
IOH
UNIT
1.7
VCC = 1.1 V to 1.95 V
VCC = 2.3 V to 2.7 V
Low-level input voltage
VI
VO
MAX
VCC
0.65 × VCC
VCC = 2.3 V to 2.7 V
VCC = 0.8 V
VIL
MIN
−3
VCC = 1.4 V
VCC = 1.65 V
−5
VCC = 2.3 V
VCC = 0.8 V
−9
mA
−8
0.7
VCC = 1.1 V
VCC = 1.4 V
3
VCC = 1.65 V
VCC = 2.3 V
8
5
mA
9
Input transition rise or fall rate
20
ns/V
TA
Operating free-air temperature
−40
85
°C
NOTE 3: All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
IOH = −100 µA
IOH = −0.7 mA
VOH
VOL
II
Ioff
ICC
Ci
A or B inputs
VCC
MIN
0.8 V to 2.7 V
VCC−0.1
0.8 V
MAX
1.1 V
0.8
1.4 V
1
IOH = −8 mA
IOH = −9 mA
1.65 V
1.2
2.3 V
1.8
IOL = 100 µA
IOL = 0.7 mA
0.8 V to 2.7 V
V
0.2
0.25
IOL = 3 mA
IOL = 5 mA
1.1 V
0.3
1.4 V
0.4
IOL = 8 mA
IOL = 9 mA
1.65 V
0.45
2.3 V
0.6
VI = VCC or GND
VI or VO = 2.7 V
VI = VCC or GND,
VI = VCC or GND
IO = 0
UNIT
0.55
IOH = −3 mA
IOH = −5 mA
0.8 V
TYP†
V
0 to 2.7 V
±5
µA
0
±10
µA
10
µA
0.8 V to 2.7 V
2.5 V
2.5
pF
† All typical values are at TA = 25°C.
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SCES478A − AUGUST 2003 − REVISED NOVEMBER 2003
switching characteristics over recommended operating free-air temperature range, CL = 15 pF
(unless otherwise noted) (see Figure 1)
PARAMETER
tpd
VCC = 1.2 V
± 0.1 V
VCC = 1.5 V
± 0.1 V
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
FROM
(INPUT)
TO
(OUTPUT)
VCC = 0.8 V
TYP
MIN
MAX
MIN
MAX
MIN
TYP
MAX
MIN
MAX
A or B
Y
7.5
0.7
3.3
0.6
1.9
0.5
1
1.5
0.4
1.1
UNIT
ns
switching characteristics over recommended operating free-air temperature range, CL = 30 pF
(unless otherwise noted) (see Figure 1)
PARAMETER
tpd
FROM
(INPUT)
TO
(OUTPUT)
A or B
Y
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
MIN
TYP
MAX
MIN
MAX
1.2
1.6
2.1
1
1.7
UNIT
ns
operating characteristics, TA = 25°C
PARAMETER
Cpd
4
Power dissipation
capacitance
TEST
CONDITIONS
f = 10 MHz
VCC = 0.8 V
TYP
13
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VCC = 1.2 V
TYP
VCC = 1.5 V
TYP
13
• DALLAS, TEXAS 75265
13
VCC = 1.8 V
TYP
13
VCC = 2.5 V
TYP
14
UNIT
pF
SCES478A − AUGUST 2003 − REVISED NOVEMBER 2003
PARAMETER MEASUREMENT INFORMATION
2 × VCC
S1
RL
From Output
Under Test
Open
GND
CL
(see Note A)
RL
VCC
0.8 V
1.2 V ± 0.1 V
1.5 V ± 0.1 V
1.8 V ± 0.15 V
2.5 V ± 0.2 V
1.8 V ± 0.15 V
2.5 V ± 0.2 V
LOAD CIRCUIT
TEST
S1
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open
2 × VCC
GND
CL
RL
15 pF
15 pF
15 pF
15 pF
15 pF
30 pF
30 pF
2 kΩ
2 kΩ
2 kΩ
2 kΩ
2 kΩ
1 kΩ
500 Ω
V∆
0.1 V
0.1 V
0.1 V
0.15 V
0.15 V
0.15 V
0.15 V
VCC
Timing Input
VCC/2
0V
tw
tsu
VCC
VCC/2
Input
th
VCC
VCC/2
VCC/2
Data Input
VCC/2
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VCC
VCC/2
Input
0V
tPHL
tPLH
VOH
VCC/2
Output
VCC/2
VOL
Output
Waveform 1
S1 at 2 × VCC
(see Note B)
VOH
Output
VCC/2
VCC/2
VCC/2
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VCC/2
0V
tPLZ
tPZL
VCC
VCC/2
Output
Waveform 2
S1 at GND
(see Note B)
VOL + V∆
VOL
tPHZ
tPZH
tPLH
tPHL
VCC
Output
Control
VCC/2
VCC/2
VOH − V∆
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, slew rate ≥ 1 V/ns.
D. The outputs are measured one at a time with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 1. Load Circuit and Voltage Waveforms
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5
MECHANICAL DATA
MPDS049B – MAY 1999 – REVISED OCTOBER 2002
DCT (R-PDSO-G8)
PLASTIC SMALL-OUTLINE PACKAGE
0,30
0,15
0,65
8
0,13 M
5
0,15 NOM
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
2,90
2,70
4,25
3,75
Gage Plane
PIN 1
INDEX AREA
1
0,25
4
0° – 8°
3,15
2,75
0,60
0,20
1,30 MAX
Seating Plane
0,10
0,10
0,00
NOTES: A.
B.
C.
D.
4188781/C 09/02
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion
Falls within JEDEC MO-187 variation DA.
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