NTA4001N Small Signal MOSFET 20 V, 238 mA, Single, N−Channel, Gate ESD Protection, SC−75 Features • • • • http://onsemi.com Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate Pb−Free Package for “Green Manufacturing” Compliance V(BR)DSS RDS(on) Typ @ VGS ID MAX (Note 1) 1.5 @ 4.5 V 20 V 238 mA 2.2 @ 2.5 V Applications • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, 3 Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. 1 Maximum Ratings (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±10 V Parameter Continuous Drain Current (Note 1) Steady State = 25°C ID 238 mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW tP 10 s IDM 714 mA TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) ISD 238 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Pulsed Drain Current Operating Junction and Storage Temperature Junction−to−Ambient – Steady State (Note 1) N−Channel SC−75 (3−Leads) Gate 1 3 Source Drain 2 Top View 3 Thermal Resistance Ratings Parameter 2 MARKING DIAGRAM 3 Symbol Max Unit RJA 416 °C/W 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 2 1 TF D SC−75 / SOT−416 CASE 463 Style 5 1 2 TF = Specific Device Code D = Date Code ORDERING INFORMATION Device NTA4001NT1 NTA4001NT1G Semiconductor Components Industries, LLC, 2003 September, 2003 − Rev. 0 1 Package Shipping SC−75 3000 / Tape & Reel SC−75 Pb−Free 3000 / Tape & Reel Publication Order Number: NTA4001N/D NTA4001N Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 100 A 20 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V 1.0 A Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±100 A Gate Threshold Voltage VGS(TH) VDS = 3 V, ID = 100 A 1.0 1.5 V Drain−to−Source On Resistance RDS(on) ( ) VGS = 4.5 V, ID = 10 mA 1.5 3.0 VGS = 2.5 V, ID = 10 mA 2.2 3.5 VDS = 3 V, ID = 10 mA 80 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Forward Transconductance gFS 0.5 mS CAPACITANCES Input Capacitance CISS 11.5 VDS = 5 V, f = 1 MHz, VGS = 0 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 3.5 10 td(ON) 13 pF SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 tf ns 15 98 ns 60 Drain−Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA NOTES: 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.66 0.8 V NTA4001N 0.2 ID, DRAIN CURRENT (A) 0.16 0.2 VDS = 5 V VGS = 2 V ID, DRAIN CURRENT (A) VGS = 10 V VGS = 5 V VGS = 2.8 V 0.18 0.14 0.12 VGS = 2.4 V 0.1 TJ = 25°C 0.08 . 0.06 0.04 VGS = 1.4 V 0.16 0.12 0.08 TJ = 125°C TJ = 25°C 0.04 VGS = 1.2 V 0.02 0 0.6 0 0 0.4 0.8 1.2 1.6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2 Figure 1. On−region Characteristics 2 2.5 VGS = 4.5 V TJ = 25°C TJ = 125°C RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 2.5 2 1.5 TJ = 25°C TJ = −55°C 1 0.5 VGS = 2.5 V 2 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2 0 Figure 3. On−resistance versus Drain Current and Temperature 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2 Figure 4. On−resistance versus Drain Current and Gate Voltage 2 1000 1.8 ID = 0.01 A 1.6 VGS = 4.5 V VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.4 1.2 1 0.8 0.6 TJ = 150°C 100 TJ = 125°C 10 0.4 0.2 0 −50 1 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 0 Figure 5. On−resistance Variation with Temperature 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 NTA4001N 25 1000 TJ = 25°C VDD = 5 V ID = 10 mA VGS = 4.5 V 20 Crss td(off) t, TIME (ns) 100 15 Ciss 10 Coss tf tr td(on) 10 5 Crss VGS = 0 V VDS = 0 V 0 10 5 0 VGS 1 5 10 15 20 1 10 VDS RG, GATE RESISTANCE () GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Resistive Switching Time Variation versus Gate Resistance Figure 7. Capacitance Variation 0.1 VGS = 0 V IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) Ciss TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current http://onsemi.com 4 0.8 100 NTA4001N PACKAGE DIMENSIONS SC−75 / SOT−416 CASE 463−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −A− S 2 3 D 3 PL 0.20 (0.008) G −B− 1 M B K J 0.20 (0.008) A MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC −−− 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN C L DIM A B C D G H J K L S H http://onsemi.com 5 INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC −−− 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC NTA4001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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