NTMFS4708N Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL Features •Fast Switching Times •Low Gate Charge •Low RDS(on) •Low Inductance SOIC-8 Package •These are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ Applications •Notebooks, Graphics Cards •DC-DC Converters •Synchronous Rectification 7.3 mW @ 10 V 30 V Parameter Drain-to-Source Voltage Gate-to-Source Voltage Power Dissipation (Note 1) Symbol Value Unit VDSS 30 V VGS ±20 V ID 11.5 A Steady State TA = 25°C TA = 85°C 8.0 t ≤ 10 s TA = 25°C 19 Steady State TA = 25°C PD t ≤ 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) N-Channel D Steady State ID TA = 85°C TA = 25°C tp ≤ 10 ms Operating Junction and Storage Temperature S 2.2 W Single Pulse Drain-to-Source Avalanche Energy. VDD = 25 V, VGS = 10 V, IPK = 7.0 A, L = 10 mH, RG = 25 W 7.8 MARKING DIAGRAM & PIN ASSIGNMENT D A 5.6 PD 1.0 W IDM 58 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) IS 6.25 A EAS 245 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) Parameter Symbol Value Unit Junction-to-Ambient – Steady State (Note 1) RqJA 56.5 °C/W Junction-to-Ambient – t ≤ 10 s (Note 1) RqJA 20 Junction-to-Ambient – Steady State (Note 2) RqJA 124 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq). © Semiconductor Components Industries, LLC, 2007 1 S S S G 1 D 4708N SOIC-8 FLAT LEAD AYWWG CASE 488AA G STYLE 1 D 4708N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package D (Note: Microdot may be in either location) ORDERING INFORMATION Device THERMAL RESISTANCE MAXIMUM RATINGS July, 2007 - Rev. 2 G 6.25 TA = 25°C Pulsed Drain Current 19 A 10.1 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Continuous Drain Current (Note 1) ID Max Package Shipping† NTMFS4708NT1G SOIC-8 FL 1500/T ape & Reel (Pb-Free) NTMFS4708NT3G SOIC-8 FL 5000/T ape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4708N/D NTMFS4708N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS 10 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 50 IGSS VDS = 0 V, VGS = ±20V VGS(TH) VGS = VDS, ID = 250 mA Gate-to-Source Leakage Current V ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ 1.0 2.5 5.0 V mV/°C RDS(on) VGS = 10 V, ID = 11.5 A 7.3 10 VGS = 4.5 V, ID = 9.5 A 10.1 14 gFS VDS = 15 V, ID = 11.5 A 23 S 970 pF Forward Transconductance mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 24 V 440 115 QG(TOT) 10 Threshold Gate Charge QG(TH) 1.3 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 4.8 RG 1.95 W td(on) 6.7 ns tr 4.3 Gate Resistance VGS = 4.5 V, VDS = 15 V; ID = 11.5 A 15 nC Total Gate Charge 2.6 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W tf 20 16 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.78 TJ = 125°C 0.60 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 6.25 A 32 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.25 A QRR http://onsemi.com 2 V ns 15.5 16.5 24 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTMFS4708N 30 42 TJ = 25°C 3.4 V ID, DRAIN CURRENT (A) VDS = 10 V 36 VGS = 3 V ID, DRAIN CURRENT (A) 10 V 25 3.8 V to 4.5 20 15 2.8 V 10 2.6 V 5 30 24 18 TJ = 125°C TJ = -55°C 12 6 2.4 V 1 2 3 4 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.02 VGS = 10 V 0.015 T = 125°C 0.01 T = 25°C T = -55°C 0.005 0 0 0 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5 10 15 20 25 30 ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 0.018 TJ = 25°C 0.014 VGS = 4.5 V 0.01 VGS = 10 V 0.006 0.002 4 8 12 16 20 24 ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Gate Voltage 100000 2 ID = 9 A 1.8 VGS = 10 V VGS = 0 V 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 0 0 1.4 1.2 1 10000 TJ = 150°C 1000 TJ = 125°C 0.8 0.6 100 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 30 2000 C, CAPACITANCE (pF) VGS = 0 V VDS = 0 V 1800 1600 VGS, GATE-TO-SOURCE VOLTAGE (V) NTMFS4708N TJ = 25°C CISS 1400 CISS 1200 1000 CRSS 800 COSS 600 400 CRSS 200 0 10 5 0 VGS 5 10 15 20 5 QT 4 2 1 ID = 11.5 A TJ = 25°C 0 25 0 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 7. Capacitance Variation 100 7 VDD = 15 V ID = 1 A VGS = 4.5 V VGS = 0 V TJ = 25°C 6 IS, SOURCE CURRENT (A) t, TIME (ns) 2 VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) td(on) td(off) tr 10 tf 1 10 5 4 3 2 1 0 0.2 1 100 0.5 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) Qgd Qgs 3 VGS = 2.0 V SINGLE PULSE 100 TC = 25°C 10 ms 100 ms 10 1 ms 10 ms 1 0.1 RDS(on) LIMIT Thermal Limit Package Limit dc 0.01 0.1 1 10 100 350 ID = 7 A 300 250 200 150 100 50 0 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTMFS4708N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K 1.000 0.965 1.330 2X 0.905 2X 0.495 E2 L1 6 G M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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