ONSEMI NTZD3156CT1G

NTZD3156C
Small Signal MOSFET
20 V, 540 mA / −20 V, −430 mA
Complementary N− and P−Channel
MOSFETs with Integrated Pull Up/Down
Resistor and ESD Protection
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Features
•
•
•
•
•
•
•
Leading Trench Technology for Low RDS(on) Performance
High Efficiency System Performance
Low Threshold Voltage
Integrated G−S Resistor on Both Devices
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These are Pb−Free Devices
V(BR)DSS
0.55 W @ 4.5 V
N−Channel
20 V
0.7 W @ 2.5 V
0.9 W @ 1.8 V
−430 mA
1.2 W @ −2.5 V
2.0 W @ −1.8 V
Applications
Bluetooth Accessories
540 mA
0.9 W @ −4.5 V
P−Channel
−20 V
• Load/Power Switching with Level Shift
• Portable Electronic Products such as GPS, Cell Phones, DSC, PMP,
ID Max
(Note 1)
RDS(on) Max
PINOUT: SOT−563
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±6
V
N−Channel Continuous Drain Current
(Note 1)
P−Channel Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
540
TA = 85°C
390
tv5s
TA = 25°C
570
Steady
State
TA = 25°C
TA = 85°C
−310
tv5s
TA = 25°C
−455
Steady
State
ID
N−Channel
P−Channel
−430
mA
TA = 25°C
PD
mW
280
tp = 10 ms
Operating Junction and Storage Temperature
IDM
1500
−750
MARKING
DIAGRAM
6
250
tv5s
Pulsed Drain Current
Top View
mA
1
SOT−563−6
CASE 463A
STYLE 9
ZC
M
G
ZC M G
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
350
mA
Device
Package
Shipping†
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
NTZD3156CT1G
SOT−563
4000 / Tape & Reel
NTZD3156CT2G
SOT−563
4000 / Tape & Reel
NTZD3156CT5G
SOT−563
8000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTZD3156C/D
NTZD3156C
Thermal Resistance Ratings
Parameter
Junction−to−Ambient – Steady State (Note 2)
Symbol
Max
Unit
RqJA
116
°C/W
Junction−to−Ambient – t = 5 s (Note 2)
304
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
N/P
V(BR)DSS
N
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
VGS = 0 V
P
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ID = 250 mA
20
ID = −250 mA
−20
V(BR)DSS/TJ
IDSS
IGSS
V
20
N
VGS = 0 V, VDS = 16 V
P
VGS = 0 V, VDS= −16 V
N
VGS = 0 V, VDS = 16 V
P
VGS = 0 V, VDS= − 16V
TJ = 25°C
1.0
mA
−1.0
TJ = 125°C
2.0
mA
−5.0
VDS = 0 V, VGS = ±4.5 V
N
mV/°C
$50
P
mA
$50
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS
N
P
Gate Threshold
Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
ID = 250 mA
0.45
1.0
ID = −250 mA
−0.45
−1.0
VGS(TH)/TJ
RDS(on)
gFS
2.0
V
−mV/°C
N
VGS = 4.5 V, ID = 540 mA
0.19
0.55
P
VGS = −4.5V, ID = −430 mA
0.39
0.9
N
VGS = 2.5 V, ID = 500 mA
0.26
0.7
P
VGS = −2.5V, ID = −300 mA
0.53
1.2
N
VGS = 1.8 V, ID = 350 mA
0.36
0.9
P
VGS = −1.8V, ID = −150 mA
0.72
2.0
N
VDS = 10 V, ID = 540 mA
1.46
P
VDS = −10 V, ID = −430 mA
1.18
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
72
f = 1 MHz, VGS = 0 V
VDS = 16 V
N
13
10
93
f = 1 MHz, VGS = 0 V
VDS = −16 V
P
3. Pulse Test: pulse width v300 ms, duty cycle v2%
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2
15
11
pF
NTZD3156C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
1.39
2.5
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.39
Total Gate Charge
QG(TOT)
1.49
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
N
P
VGS = 4.5 V, VDS = 10 V; ID = 540 mA
VGS = −4.5 V, VDS = −10 V; ID = −430 mA
0.1
0.26
2.5
nC
0.1
0.3
0.37
SWITCHING CHARACTERISTICS (VGS = V) (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
tf
td(ON)
Rise Time
Turn−Off Delay Time
7.7
VGS = 4.5 V, VDD = 10 V, ID = 540 mA,
RG = 10 W
td(OFF)
Fall Time
Turn−On Delay Time
N
21
10
P
tr
ns
9.2
VGS = −4.5 V, VDD = −10 V, ID = −430 mA,
RG = 10 W
td(OFF)
Fall Time
5.3
tf
6.5
29
19.5
Drain−Source Diode Characteristics
Forward Diode Voltage
VSD
N
P
N
P
Reverse Recovery Time
tRR
N
P
VGS = 0 V, TJ = 25°C
VGS = 0 V, TJ = 125°C
VGS = 0 V,
dIS/dt = 100 A/ms
4. Switching characteristics are independent of operating junction temperatures
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3
IS = 350 mA
0.77
1.2
IS = −350 mA
−0.77
−1.2
IS = 350 mA
0.65
IS = −350 mA
0.63
IS = 350 mA
9.4
IS = −350 mA
14.6
V
ns
NTZD3156C
N−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.8 V
0.8
1.2
TJ = 25°C
VGS = 2.5 V, 2.0 V
VDS w 10 V
VGS = 1.6 V
0.7
0.6
0.5
0.4
VGS = 1.4 V
0.3
0.2
0.1
VGS = 1.2 V
RDS(on), DRAIN−TO−SOURCE CURRENT
RESISTANCE (W)
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.0
0.8
0.6
TJ = 125°C
0.4
TJ = 25°C
0.2
2.0
0.8
1.0
1.2
1.6
1.4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.5
1.8
0.50
ID = 0.54 A
TJ = 25°C
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.45
VGS = 1.8 V
0.40
0.35
0.30
0.25
VGS = 2.5 V
0.20
VGS = 4.5 V
0.15
6
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
1
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1000
ID = 0.54 A
VGS = 10 V
VGS = 0 V
IDSS, LEAKAGE (nA)
1.4
TJ = 25°C
0.10
0.2
0.10
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
0
0.6
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.9
4.5V
ID, DRAIN CURRENT (A)
1.0
1.2
1
100
TJ = 150°C
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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4
20
NTZD3156C
N−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS, GATE−TO−SOURCE VOLTAGE (V)
150
VGS = 0 V
C, CAPACITANCE (pF)
125
TJ = 25°C
100
CISS
75
50
COSS
25
0
CRSS
0
5
10
15
20
4.5
QT
4
3.5
3
2.5
2
QGS
1.5
1
ID = 0.54 A
TJ = 25°C
0.5
0
0
DRAIN−TO−SOURCE VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
0.5
IS, SOURCE CURRENT (A)
VDD = 10 V
ID = 0.54 A
VGS = 4.5 V
td(off)
t, TIME (ns)
0.2
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
tf
10
td(on)
tr
1
QGD
1
10
RG, GATE RESISTANCE (W)
0.4
0.3
0.2
0.1
0
100
VGS = 0 V
TJ = 25°C
0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
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5
0.9
NTZD3156C
P−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0.9
−4.5 V
VGS = −1.8 V
0.6
VGS = −1.6 V
0.5
TJ = 25°C
0.4
0.3
VGS = −1.4 V
0.2
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.8
0.7
0.6
0.5
0.4
TJ = 125°C
0.3
0.8
1.0
1.2
1.4
1.6
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 11. On−Region Characteristics
Figure 12. Transfer Characteristics
1.0
1.8
1.0
ID = −0.43 A
TJ = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = −1.8 V
0.8
0.7
0.6
VGS = −2.5 V
0.5
0.4
VGS = −4.5 V
0.3
0.2
6
Figure 13. On−Resistance versus
Gate−to−Source Voltage
0.25
0.35
0.45
0.55
−ID, DRAIN CURRENT (A)
0.65
0.75
Figure 14. On−Resistance versus Drain
Current and Gate Voltage
1.6
1000
ID = −0.43 A
VGS = −4.5 V
VGS = 0 V
−IDSS, LEAKAGE (nA)
1.4
TJ = 25°C
0.9
0.1
0.15
0.3
1
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
0
0.6
2.0
TJ = 25°C
0.2
0.1
VGS = −1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE CURRENT
RESISTANCE (W)
−ID, DRAIN CURRENT (A)
VGS = −2.0 V
0.7
VDS ≤ 10 V
0.9
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
−ID, DRAIN CURRENT (A)
0.8
1.0
−2.5 V
1.2
1
TJ = 150°C
100
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
5
10
14
20
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 15. On−Resistance Variation with
Temperature
Figure 16. Drain−to−Source Leakage Current
versus Voltage
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6
NTZD3156C
P−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
150
VGS = 0 V
C, CAPACITANCE (pF)
125
TJ = 25°C
CISS
100
75
50
COSS
25
0
CRSS
0
5
10
15
20
4.5
QT
4
3.5
3
2.5
2
QGS
1
ID = −0.43 A
TJ = 25°C
0.5
0
0
DRAIN−TO−SOURCE VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
1.6
Figure 18. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
−IS, SOURCE CURRENT (A)
0.5
VDD = −10 V
ID = −0.44 A
VGS = −4.5 V
t, TIME (ns)
0.2
Qg, TOTAL GATE CHARGE (nC)
Figure 17. Capacitance Variation
td(off)
tf
td(on)
10
1
QGD
1.5
tr
1
10
RG, GATE RESISTANCE (W)
0.4
0.3
0.2
0.1
0
100
VGS = 0 V
TJ = 25°C
0
Figure 19. Resistive Switching Time Variation
versus Gate Resistance
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 20. Diode Forward Voltage versus
Current
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7
0.9
NTZD3156C
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
5
6
1
e
2
A
4
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
SOLDERING FOOTPRINT*
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 9:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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NTZD3156C/D