UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two complementary BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium. 2 R1 R2 Q2 R2 Q1 R1 4 5 Features • • • • • 1 MARKING DIAGRAM Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel Pb−Free Packages are Available 5 SC−88A/SOT−353 CASE 419A STYLE 6 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 4 Ux M G G 1 2 3 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ux = Device Marking x = 2, 3 or 5 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. THERMAL CHARACTERISTICS Thermal Resistance − Junction-to-Ambient (surface mounted) RqJA 833 °C/W Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C PD *150 mW Total Package Dissipation @ TA = 25°C (Note 1) Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 6 1 Publication Order Number: UMC2NT1/D UMC2NT1, UMC3NT1, UMC5NT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − 0.2 0.5 1.0 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 60 35 20 100 60 35 − − − VCE(SAT) − − 0.25 Vdc VOL − − 0.2 Vdc Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1 UMC3NT1 UMC5NT1 ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 R1 15.4 7.0 3.3 22 10 4.7 28.6 13 6.1 kW Resistor Ratio UMC2NT1 UMC3NT1 UMC5NT1 R1/R2 0.8 0.8 0.38 1.0 1.0 0.47 1.2 1.2 0.56 Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − 0.2 0.5 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 60 35 80 100 60 140 − − − VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc kW Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1 UMC3NT1 UMC5NT1 ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 R1 15.4 7.0 33 22 10 47 28.6 13 61 Resistor Ratio UMC2NT1 UMC3NT1 UMC5NT1 R1/R2 0.8 0.8 0.8 1.0 1.0 1.0 1.2 1.2 1.2 http://onsemi.com 2 UMC2NT1, UMC3NT1, UMC5NT1 ORDERING INFORMATION Package Shipping † UMC2NT1 SC−88A/SOT−353 3000 / Tape & Reel UMC2NT1G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC3NT1 SC−88A/SOT−353 3000 / Tape & Reel UMC3NT1G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC3NT2 SC−88A/SOT−353 3000 / Tape & Reel UMC3NT2G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC5NT1 SC−88A/SOT−353 3000 / Tape & Reel UMC5NT1G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel UMC5NT2 SC−88A/SOT−353 3000 / Tape & Reel UMC5NT2G SC−88A/SOT−353 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING AND RESISTOR VALUES Transistor 1 − PNP Device Transistor 2 − NPN Marking R1 (K) R2 (K) R1 (K) R2 (K) U2 U3 U3 U5 U5 22 10 10 4.7 4.7 22 10 10 10 10 22 10 10 47 47 22 10 10 47 47 UMC2NT1, G UMC3NT1, G UMC3NT2, G UMC5NT1, G UMC5NT2, G PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 3 150 UMC2NT1, UMC3NT1, UMC5NT1 1000 10 VCE = 10 V IC/IB = 10 1 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1 PNP TRANSISTOR 25°C TA=−25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 1 10 Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) TA=−25°C 10 1 0.1 0.01 0.001 50 Figure 4. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 mA TA = 25°C V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) VO = 0.2 V 10 25°C 75°C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage TA=−25°C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC 0 25°C −25°C 100 10 50 40 TA=75°C 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 50 10 UMC2NT1, UMC3NT1, UMC5NT1 1 1000 IC/IB = 10 VCE = 10 V TA=−25°C 25°C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1 NPN TRANSISTOR 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 25°C 75°C f = 1 MHz IE = 0 mA TA = 25°C 1 0.1 0.01 0.001 50 TA=−25°C 10 VO = 5 V 0 1 2 3 5 6 7 4 Vin, INPUT VOLTAGE (V) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 10 Figure 10. Output Current versus Input Voltage Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 50 UMC2NT1, UMC3NT1, UMC5NT1 1000 1 VCE = 10 V IC/IB = 10 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1 PNP TRANSISTOR TA=−25°C 0.1 25°C 75°C 0.01 20 40 IC, COLLECTOR CURRENT (mA) 0 TA=75°C 10 50 25°C 100 −25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 mA TA = 25°C 2 1 0 0 10 TA=−25°C 1 0.1 0.01 VO = 5 V 0 Figure 14. Output Capacitance 100 25°C 75°C 10 0.001 50 20 30 40 VR, REVERSE BIAS VOLTAGE (V) V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) VO = 0.2 V TA=−25°C 25°C 75°C 1 0 10 8 9 Figure 15. Output Current versus Input Voltage 10 0.1 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 50 10 UMC2NT1, UMC3NT1, UMC5NT1 1000 1 VCE = 10 V IC/IB = 10 25°C TA=−25°C 0.1 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1 NPN TRANSISTOR 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 50 10 1 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 0.001 50 20 30 40 VR, REVERSE BIAS VOLTAGE (V) Figure 19. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (V) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://onsemi.com 7 50 UMC2NT1, UMC3NT1, UMC5NT1 1000 1 VCE = 10 V IC/IB = 10 TA=75°C 0.1 0.01 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — UMC5NT1 PNP TRANSISTOR 25°C −25°C 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 100 10 1 60 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Figure 23. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25°C 10 C ob , CAPACITANCE (pF) 25°C −25°C Figure 22. VCE(sat) versus IC 8 6 4 SERIES 1 2 0 TA=75°C 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (V) 40 1 VO = 5 V 0.1 0.01 45 Figure 24. Output Capacitance 75°C 10 TA=−25°C 25°C 0 2 4 6 8 Vin, INPUT VOLTAGE (V) 10 12 Figure 25. Output Current versus Input Voltage http://onsemi.com 8 UMC2NT1, UMC3NT1, UMC5NT1 10 1000 VCE = 10 V IC/IB = 10 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — UMC5NT1 NPN TRANSISTOR 1 25°C TA=−25°C 75°C 0.1 0.01 0 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 10 IC, COLLECTOR CURRENT (mA) 1 Figure 26. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 0.001 50 Figure 28. Output Capacitance VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (V) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 29. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 27. DC Current Gain f = 1 MHz IE = 0 mA TA = 25°C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 30. Input Voltage versus Output Current http://onsemi.com 9 UMC2NT1, UMC3NT1, UMC5NT1 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N J C H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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