MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) Features • • • • • • Pb−Free Packages are Available Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel − Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. PIN 1 BASE (INPUT) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Characteristic Total Device Dissipation TA = 25°C Derate above 25°C 2 SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM Max Unit PD 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) mW °C/W Thermal Resistance, Junction-to-Ambient RJA 618 (Note 1) 403 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RJL 280 (Note 1) 332 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 6x M 6x Symbol PIN 2 EMITTER (GROUND) 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS R2 3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating R1 M = Specific Device Code (See Order Info Table) = Date Code ORDERING INFORMATION See specific ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2004 October, 2004 − Rev. 7 1 Publication Order Number: MUN5111T1/D MUN5111T1 Series ORDERING INFORMATION AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping† MUN5111T1 SC−70/SOT−323 6A 10 10 3000/Tape & Reel MUN5111T1G SC−70/SOT−323 (Pb−Free) 6A 10 10 3000/Tape & Reel MUN5112T1 SC−70/SOT−323 6B 22 22 3000/Tape & Reel MUN5112T1G SC−70/SOT−323 (Pb−Free) 6B 22 22 3000/Tape & Reel MUN5113T1 MUN5113T3 SC−70/SOT−323 6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MUN5113T1G SC−70/SOT−323 (Pb−Free) 6C 47 47 3000/Tape & Reel MUN5114T1 SC−70/SOT−323 6D 10 47 3000/Tape & Reel MUN5114T1G SC−70/SOT−323 (Pb−Free) 6D 10 47 3000/Tape & Reel MUN5115T1 (Note 3) SC−70/SOT−323 6E 10 ∞ 3000/Tape & Reel MUN5115T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6E 10 ∞ 3000/Tape & Reel MUN5116T1 (Note 3) SC−70/SOT−323 6F 4.7 ∞ 3000/Tape & Reel MUN5130T1 (Note 3) SC−70/SOT−323 6G 1.0 1.0 3000/Tape & Reel MUN5130T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6G 1.0 1.0 3000/Tape & Reel MUN5131T1 (Note 3) SC−70/SOT−323 6H 2.2 2.2 3000/Tape & Reel MUN5131T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6H 2.2 2.2 3000/Tape & Reel MUN5132T1 (Note 3) SC−70/SOT−323 6J 4.7 4.7 3000/Tape & Reel MUN5132T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6J 4.7 4.7 3000/Tape & Reel MUN5133T1 (Note 3) SC−70/SOT−323 6K 4.7 47 3000/Tape & Reel MUN5133T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6K 4.7 47 3000/Tape & Reel MUN5134T1 (Note 3) SC−70/SOT−323 6L 22 47 3000/Tape & Reel MUN5135T1 (Note 3) SC−70/SOT−323 6M 2.2 47 3000/Tape & Reel MUN5136T1 SC−70/SOT−323 6N 100 100 3000/Tape & Reel MUN5137T1 SC−70/SOT−323 6P 47 22 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1 MUN5115T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5116T1 MUN5131T1 MUN5132T1 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/ MUN5136T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 Symbol Min Typ Max Unit VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 −50 RJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 MUN5111T1 Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1 TA=−25°C 0.1 25°C 75°C 0.01 0 20 25°C 100 10 −25°C 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 100 TA=−25°C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage 10 0.1 100 25°C 75°C 10 0.001 50 Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 10 MUN5111T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1 IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75°C 10 1 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage TA=−25°C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25°C −25°C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 10 MUN5111T1 Series 1 1000 IC/IB = 10 TA=−25°C 25°C 75°C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 −25°C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 10 MUN5111T1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 −25°C 120 100 80 60 40 20 0 80 TA=75°C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 3.5 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA=75°C f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25°C −25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 25°C 75°C TA=−25°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1 1000 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 75°C 0.1 25°C −25°C 0.01 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 75°C 100 25°C 10 1 35 −25°C 0 20 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 10 8 7 6 5 4 3 2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 −25°C 10 25°C 1 0.1 0.01 0 0 1 2 3 4 −25°C 75°C 1 25°C 0 5 10 6 7 8 9 10 Figure 26. Output Current versus Input Voltage 10 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 9 1 0 120 40 60 80 100 IC, COLLECTOR CURRENT (mA) 15 20 25 30 35 40 IC, OUTPUT CURRENT (mA) 45 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 50 MUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75°C 25°C −25°C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1 1000 75°C TA = −25°C 100 25°C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 25°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 1 VO = 5 V 0 1 2 3 4 TA = −25°C 10 VO = 0.2 V 75°C 0 2 6 7 8 9 10 Figure 31. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance 25°C 75°C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 32. Input Voltage versus Output Current http://onsemi.com 10 20 MUN5111T1 Series hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage versus Collector Current Figure 34. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 11 Figure 36. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 37. Input Voltage versus Output Current http://onsemi.com 11 MUN5111T1 Series PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S B S 1 2 D G 0.05 (0.002) J N C MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR K H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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