Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions · Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed. unit:mm 2009B [2SA1209/2SC2911] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8 0.8 0.6 15.5 0.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 1.2 1 ( ) : 2SA1209 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO VEBO (–)160 V IC (–)140 mA ICP (–)200 mA 1 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg (–)5 Tc=25˚C V 10 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 DC Current Gain Gain-Bandwidth Product hFE fT VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA Output Capacitance Cob VCB=(–)10V, f=1MHz Ratings min 100* *: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 typ max Unit (–)0.1 µA (–)0.1 µA 400* 150 (4.0)3.0 MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5 2SA1209/2SC2911 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage Ratings Conditions VCE(sat) min typ 0.07 (–0.14) IC=(–)50mA, IB=(–)5mA Unit max 0.3 (–0.4) V Turn-ON Time ton See specified Test Circuit 0.1 µs Fall Time tf tstg See specified Test Circuit 0.1 µs See specified Test Circuit 1.5 µs Storage Time Switching Test Circuit IB1 IN OUT IB2 3kΩ RB 2kΩ 5kΩ 50Ω + + 1µF 1µF 20V --2V IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.) IC -- VCE mA --0.5 A 0.4m -- --100 0.5 0.4mA 100 A --0.3m --80 2SC2911 mA 0.6 120 A 6m . --0 Collector Current, IC – mA Collector Current, IC – mA --120 IC -- VCE 140 2SA1209 mA --140 --0.2mA --60 --40 --0.1mA --20 0.3mA 80 60 0.2mA 40 0.1mA 20 IB=0 0 0 --10 --20 --30 --40 --50 --60 Collector-to-Emitter Voltage, VCE – V --140 0 --70 IC -- VBE 20 30 40 50 60 70 ITR03022 IC -- VBE 140 --120 2SC2911 120 Collector Current, IC – mA Collector Current, IC – mA 10 Collector-to-Emitter Voltage, VCE – V ITR03021 2SA1209 --100 --80 --60 --40 --20 0 0 IB=0 0 100 80 60 40 20 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE – V --1.0 ITR03023 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE – V 1.0 ITR03024 No.779-2/5 2SA1209/2SC2911 2SA1209 VCE=--5V 7 5 3 2 100 7 5 3 2 10 5 7 --1.0 2 3 5 2 3 5 2SA1209 VCE=--10V 2 100 7 5 3 2 10 --1.0 2 3 5 7 2 --10 3 5 3 2 10 7 5 3 2 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 5 3 2 --0.1 7 5 3 7 --1.0 2 3 5 7 --10 2 5 7 1.0 2 3 3 Collector Current, IC – mA 5 7 --100 2 ITR03031 5 7 10 2 3 5 Collector Current, IC – mA 7 100 2 ITR03026 fT -- IC 2SC2911 VCE=10V 2 100 7 5 3 2 2 3 5 7 2 10 3 5 7 100 2 ITR03028 Collector Current, IC – mA Cob -- VCB 2SC2911 f=1MHz 5 3 2 10 7 5 3 2 2 3 5 7 2 10 3 5 7 100 ITR03030 VCE(sat) -- IC 1.0 2SC2911 IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – V Collector-to-Emitter Saturation Voltage, VCE (sat) – V 7 5 2 Collector-to-Base Voltage, VCB -- V 2SA1209 IC / IB=10 --1.0 2 3 1.0 1.0 7 --100 ITR03029 VCE(sat) -- IC 2 7 5 7 Output Capacitance, Cob – pF Output Capacitance, Cob – pF 5 3 100 100 7 2 2 1.0 2SA1209 f=1MHz 1.0 --1.0 3 10 Cob -- VCB 100 5 3 7 --100 2 ITR03027 Collector Current, IC – mA 2SC2911 VCE=5V 7 10 7 --100 2 ITR03025 fT -- IC 3 Gain-Bandwidth Product, fT – MHz 7 --10 Collector Current, IC – mA hFE -- IC 1000 Gain-Bandwidth Product, fT – MHz Common Emitter DC Current Gain, hFE 1000 Common Emitter DC Current Gain, hFE hFE -- IC 5 3 2 0.1 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC – mA 5 7 100 2 ITR03032 No.779-3/5 2SA1209/2SC2911 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 3 2 --1.0 7 5 5 7 --1.0 2 3 5 7 --10 3 5 3 2 1.0 7 5 3 7 --100 2 ITR03033 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC – mA 7 100 2 ITR03034 PC -- Ta 1.2 2SA1209 / 2SC2911 3 ICP=200mA 2 1m s IC=140mA 100 DC 5 1s 7 op era tio 3 n 2 10 7 5 2SA1209 / 2SC2911 DC Single pulse (For PNP, minus sign is omitted.) 3 2 5 ASO 5 Collector Current, IC – mA 2 Collector Current, IC – mA 2SC2911 IC / IB=10 7 Collector Dissipation, PC – W Base-to-Emitter Saturation Voltage, VBE (sat) – V 7 3 VBE(sat) -- IC 10 2SA1209 IC / IB=10 2 3 5 7 10 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE – V 3 5 ITR03035 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR03036 PC -- Tc 12 2SA1209 / 2SC2911 Collector Dissipation, PC – W 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 ITR03037 No.779-4/5 2SA1209/2SC2911 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.779-5/5