2SC5980 Ordering number : ENN8091 2SC5980 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol Conditions Ratings Unit VCBO VCES 100 V 100 V VCEO VEBO 50 V 6 V IC 8 A ICP 11 A IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 2 A 1.0 W 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=40V, IE=0 0.1 µA Emitter Cutoff Current IEBO hFE VEB=4V, IC=0 0.1 µA DC Current Gain VCE=2V, IC=500mA 250 400 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21405EA TS IM TB-00000320 No.8091-1/4 2SC5980 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Ratings Conditions min typ VCE=10V, IC=500mA VCB=10V, f=1MHz IC=3.5A, IB=175mA Unit max 330 MHz 28 IC=2A, IB=40mA IC=2A, IB=40mA IC=10µA, IE=0 IC=100µA, RBE=∞ IC=1mA, RBE=∞ IE=10µA, IC=0 pF 125 190 mV 100 150 mV 0.83 1.2 V 100 V 100 V 50 V 6 V Turn-ON Time V(BR)EBO ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 420 ns tf See specified Test Circuit. 25 ns Fall Time Package Dimensions unit : mm 2045B 2.3 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.5 2 1.2 7.0 5.5 0.5 2 1 0.6 0.8 0.6 0.5 0.85 1.2 7.5 0.8 1.6 0.85 0.7 1 0.5 7.0 5.5 6.5 5.0 4 0.5 1.5 2.3 1.5 6.5 5.0 4 Package Dimensions unit : mm 2044B 3 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 SANYO : TP-FA 2.3 SANYO : TP 2.3 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 VR RB 50Ω RL + 100µF VBE= --5V + 470µF VCC=25V IC=20IB1= --20IB2=2.5A No.8091-2/4 2SC5980 IC -- VCE 8 VCE=2V 80mA 10 7 IC -- VBE 8 0mA 7 6 40mA 30mA 5 20mA 15mA 10mA 4 3 2 5mA 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V 3 2 0 0 Ta=75°C 25°C --25°C 2 100 7 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 0.9 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 3 2 0.1 5°C 7 7 Ta= 5 25° 3 2 2 3 5 7 0.1 2 3 5°C --2 C 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT08225 2 3 5 IT08222 VCE(sat) -- IC IC / IB=20 3 2 0.1 7 °C 75 5 = Ta 3 5° C --2 2 °C 25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT08224 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 1.2 100 3 5 1.1 IT08220 2 0.01 0.01 5 7 100 IT08223 1.0 1.0 3 IC / IB=50 2 0.01 0.01 0.8 5 5 VCE(sat) -- IC 3 0.7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 0.6 VCE=10V 7 100 2 0.5 f T -- IC 10 0.01 5 7 10 IT08221 f=1MHz 10 0.1 0.4 7 Cob -- VCB 2 0.3 Base-to-Emitter Voltage, VBE -- V Gain-Bandwidth Product, f T -- MHz 5 5 0.01 0.2 1000 7 3 0.1 IT08219 VCE=2V DC Current Gain, hFE 4 1.0 hFE -- IC 1000 Output Capacitance, Cob -- pF 5 1 IB=0 0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 6 Ta= 75° C 25° C --25 °C Collector Current, IC -- A Collector Current, IC -- A 60mA 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT08226 No.8091-3/4 2SC5980 ASO 2 10µs 100ms 10ms 50 0 1m µs IC=8A DC s Op era DC tio Op n( era Tc tio =2 n( 5° Ta C) =2 5° C) Collector Dissipation, PC -- W 0µ s Collector Current, IC -- A 10 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Tc=25°C Single Pulse 0.01 0.1 2 3 1.0 0.8 No 0.6 he at sin k 0.4 0.2 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT08227 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT02972 PC -- Tc 18 Collector Dissipation, PC -- W PC -- Ta 1.2 ICP=11A 16 15 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT02973 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8091-4/4