SANYO TN6Q04

TN6Q04
Ordering number : ENN8294
ExPD (Excellent Power Device)
TN6Q04
Quasi-Resonant Switching
Power Supply ExPD
Features
•
•
•
•
•
Quasi-resonant type original control IC.
High voltage power MOSFET with current sense.
Low input voltage protection (self reset)
Overvoltage protection (latch).
Overcurrent protection (pulse-by-pulse).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
unit
[All voltage parameters are absolute voltage referenced to GND]
Drain-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDD Pin Applied Voltage
FB Pin Applied Voltage
EDGE Pin Applied Voltage
VDSS
3-5
650
V
ID
3-5
5.5
A
IDP
VDD
3-5
16.5
A
4-5
--0.3 to 16.7
V
VFB
1-5
--0.3 to VDD+0.3
V
VEDGE
2-5
--0.3 to VDD+0.3
V
2
W
Allowable Power Dissipation
PD
Operating Temperature
Topr
Junction Temperature
Tj
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
35
W
--25 to +125
°C
150
°C
--55 to +150
°C
3-5
155
mJ
3-5
5.5
A
*1 VDD=50V, L=10mH, IAV=5.5A
*2 L≤10mH, single pulse
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32505IQ TS IM TB-00001322 No.8294-1/4
TN6Q04
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
3-5 ID=1mA, VDD=0
3-5 VDS=650V, VDD=0
RDS(on)
Ciss
3-5 ID=2.8A, VDD=15V
VDS=20V, f=1MHz
Zero-Gate Voltage Drain Current
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Coss
650
V
1
1.2
VDS=20V, f=1MHz
1.6
mA
Ω
1450
pF
250
pF
[IC]
Power Supply Line Breakdown Voltage
V(BR)DD
OVP
Overvoltage Input Latch Shutdown Threshold Voltage
4-5 IDD=1mA, VFB=0
16.7
4-5
15.7
16.5
17.3
V
V
15.2
16.0
16.8
V
14.6
15.4
16.2
Burst Mode Start Threshold Voltage
VBon
Burst Mode Stop Threshold Voltage
VBoff
Burst Mode Hysteresis Voltage
∆VB
4-5 VEDGE=VDD
4-5 VEDGE=VDD
4-5 VEDGE=VDD
UVH
4-5
9.1
9.9
10.7
V
8.0
8.8
9.6
V
Low Voltage Protection ReleaseThreshold Voltage
(Latch Reset Threshold Voltage)
0.6
V
V
Low Voltage Protection Operation Threshold Voltage
UVL
4-5
Low Voltage Protection Hysteresis Voltage
∆UV
4-5
Feedback Detection Threshold Voltage
VFB
1-5
0.58
0.70
0.82
V
Edge Signal Release Threshold Voltage
VEDGE-H
2-5
2.3
2.6
2.9
V
Edge Signal Detection Threshold Voltage
VEDGE-L
2-5
1.6
1.9
2.2
V
Edge Signal Hysteresis Voltage
∆VEDGE
fosc
2-5
35
40
kHz
180
210
kHz
Reference Oscillation Frequency
Maximum Oscillation Frequency
3-5 VEDGE=0
3-5
fmax
Power Supply Current (at start-up)
1.1
V
0.7
30
150
V
µA
4-5
200
Minimum ON Time
IDD(on)
ton(min)
3-5
300
ns
Step Drive Voltage
tstep
3-5
200
ns
VGstep
3-5
VDD--5.7
V
Step Drive Gate Voltage
Package Dimensions
unit : mm
2249
4.5
10.0
3.2
16.0
7.2
3.5
2.8
13.3
0.5
2.54
1.27
(4.0)
(5.3)
0.7
2.54
1.27
3
12
10.3
0.9
(0.9)
45
1.5
3.0
6.5
1.27
2.54
1.27
2.54
6.0
2.4
1 : FB
2 : EDGE
3 : DRAIN
4 : VDD
5 : SOURCE
SANYO : TO-220FI5H
No.8294-2/4
TN6Q04
Block Diagram
VDD pin
4
EDGE pin
2
Internal power supply
Undervoltage protection
Falling edge detection
Overvoltage
protection
Oscillator
Latch circuit
Burst circuit
Reference voltage
Overcurrent /
FB comparator
3
DRAIN pin
5
SOURCE
(GND) pin
Logic
Driver
FB pin
1
Pin Definitions and Functions
Pin No.
Symbol
1
FB
Name
Function
Overcurrent / feedback terminal
Overcurrent detection / voltage control input
2
EDGE
EDGE dtection terminal
Delay EDGE voltage input
3
DRAIN
DRAIN terminal
Power MOSFET drain
4
VDD
SOURCE (GND)
5
Power supply terminal
Input for start-up voltage and drive voltage
Source (Ground) terminal
Power MOSFET source (ground)
Sample Application Circuit
Starting resistors
Voltage resonance capacitor
Snubber circuit
+B
+
5
+
4
OCP
Input voltage
compensation
resistor
3
2
GND
1
+
FB / OCP
adjusting resistor
Error amplifier
VCC circuit
Delay time setting capacitor and resistor
No.8294-3/4
TN6Q04
Forward Bias ASO
10
7
5
Drain Current, ID -- A
<10µs
10µ
s
IDP=16.5A
10
ID=5.5A
0µ
s
1m
3
2
10
m
1
DC 00m s
op s
era
tio
n
1.0
7
5
3
2
s
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
1.0
2
3
2.0
1.5
1.0
0.5
0
5 7 10
2
3
5 7 100
2
Drain-to-Source Voltage, VDS -- V
3
5 7 1000
IT09263
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT09261
PD -- Tc
40
Allowable Power Dissipation, PD -- W
PD -- Ta
2.5
Allowable Power Dissipation, PD -- W
3
2
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT09264
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject
to change without notice.
PS No.8294-4/4