TN6Q04 Ordering number : ENN8294 ExPD (Excellent Power Device) TN6Q04 Quasi-Resonant Switching Power Supply ExPD Features • • • • • Quasi-resonant type original control IC. High voltage power MOSFET with current sense. Low input voltage protection (self reset) Overvoltage protection (latch). Overcurrent protection (pulse-by-pulse). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings unit [All voltage parameters are absolute voltage referenced to GND] Drain-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDD Pin Applied Voltage FB Pin Applied Voltage EDGE Pin Applied Voltage VDSS 3-5 650 V ID 3-5 5.5 A IDP VDD 3-5 16.5 A 4-5 --0.3 to 16.7 V VFB 1-5 --0.3 to VDD+0.3 V VEDGE 2-5 --0.3 to VDD+0.3 V 2 W Allowable Power Dissipation PD Operating Temperature Topr Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV PW≤10µs, duty cycle≤1% Tc=25°C 35 W --25 to +125 °C 150 °C --55 to +150 °C 3-5 155 mJ 3-5 5.5 A *1 VDD=50V, L=10mH, IAV=5.5A *2 L≤10mH, single pulse Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505IQ TS IM TB-00001322 No.8294-1/4 TN6Q04 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS 3-5 ID=1mA, VDD=0 3-5 VDS=650V, VDD=0 RDS(on) Ciss 3-5 ID=2.8A, VDD=15V VDS=20V, f=1MHz Zero-Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Coss 650 V 1 1.2 VDS=20V, f=1MHz 1.6 mA Ω 1450 pF 250 pF [IC] Power Supply Line Breakdown Voltage V(BR)DD OVP Overvoltage Input Latch Shutdown Threshold Voltage 4-5 IDD=1mA, VFB=0 16.7 4-5 15.7 16.5 17.3 V V 15.2 16.0 16.8 V 14.6 15.4 16.2 Burst Mode Start Threshold Voltage VBon Burst Mode Stop Threshold Voltage VBoff Burst Mode Hysteresis Voltage ∆VB 4-5 VEDGE=VDD 4-5 VEDGE=VDD 4-5 VEDGE=VDD UVH 4-5 9.1 9.9 10.7 V 8.0 8.8 9.6 V Low Voltage Protection ReleaseThreshold Voltage (Latch Reset Threshold Voltage) 0.6 V V Low Voltage Protection Operation Threshold Voltage UVL 4-5 Low Voltage Protection Hysteresis Voltage ∆UV 4-5 Feedback Detection Threshold Voltage VFB 1-5 0.58 0.70 0.82 V Edge Signal Release Threshold Voltage VEDGE-H 2-5 2.3 2.6 2.9 V Edge Signal Detection Threshold Voltage VEDGE-L 2-5 1.6 1.9 2.2 V Edge Signal Hysteresis Voltage ∆VEDGE fosc 2-5 35 40 kHz 180 210 kHz Reference Oscillation Frequency Maximum Oscillation Frequency 3-5 VEDGE=0 3-5 fmax Power Supply Current (at start-up) 1.1 V 0.7 30 150 V µA 4-5 200 Minimum ON Time IDD(on) ton(min) 3-5 300 ns Step Drive Voltage tstep 3-5 200 ns VGstep 3-5 VDD--5.7 V Step Drive Gate Voltage Package Dimensions unit : mm 2249 4.5 10.0 3.2 16.0 7.2 3.5 2.8 13.3 0.5 2.54 1.27 (4.0) (5.3) 0.7 2.54 1.27 3 12 10.3 0.9 (0.9) 45 1.5 3.0 6.5 1.27 2.54 1.27 2.54 6.0 2.4 1 : FB 2 : EDGE 3 : DRAIN 4 : VDD 5 : SOURCE SANYO : TO-220FI5H No.8294-2/4 TN6Q04 Block Diagram VDD pin 4 EDGE pin 2 Internal power supply Undervoltage protection Falling edge detection Overvoltage protection Oscillator Latch circuit Burst circuit Reference voltage Overcurrent / FB comparator 3 DRAIN pin 5 SOURCE (GND) pin Logic Driver FB pin 1 Pin Definitions and Functions Pin No. Symbol 1 FB Name Function Overcurrent / feedback terminal Overcurrent detection / voltage control input 2 EDGE EDGE dtection terminal Delay EDGE voltage input 3 DRAIN DRAIN terminal Power MOSFET drain 4 VDD SOURCE (GND) 5 Power supply terminal Input for start-up voltage and drive voltage Source (Ground) terminal Power MOSFET source (ground) Sample Application Circuit Starting resistors Voltage resonance capacitor Snubber circuit +B + 5 + 4 OCP Input voltage compensation resistor 3 2 GND 1 + FB / OCP adjusting resistor Error amplifier VCC circuit Delay time setting capacitor and resistor No.8294-3/4 TN6Q04 Forward Bias ASO 10 7 5 Drain Current, ID -- A <10µs 10µ s IDP=16.5A 10 ID=5.5A 0µ s 1m 3 2 10 m 1 DC 00m s op s era tio n 1.0 7 5 3 2 s Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 1.0 2 3 2.0 1.5 1.0 0.5 0 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 1000 IT09263 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT09261 PD -- Tc 40 Allowable Power Dissipation, PD -- W PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09264 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8294-4/4