2SK3101LS Ordering number : ENN7910 N-Channel Silicon MOSFET 2SK3101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 Gate-to-Source Voltage VGSS ±30 V 11 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 44 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 69.1 mJ Avalanche Current *2 IAV 11 Tc=25°C A *1 VDD=50V, L=1mH, IAV=11A *2 L≤1mH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=320V, VGS=0 Forward Transfer Admittance VGS(off) yfs VGS= ±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A Static Drain-to-Source On-State Resistance RDS(on) ID=8A, VGS=15V Gate-to-Source Leakage Current Cutoff Voltage Ratings min typ max 400 V 1.0 ±100 3.0 4.0 4.0 8.0 0.32 Marking : K3101 Unit mA nA V S 0.4 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81004 TS IM TB-00000033 No.7910-1/5 2SK3101LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 1850 Output Capacitance 480 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 240 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 140 ns tf See specified Test Circuit. 41 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg Diode Forward Voltage VSD VDS=200V, VGS=10V, ID=11A 58 IS=11A, VGS=0 0.9 nC 1.2 V Package Dimensions unit : mm 2078C 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI(LS) Switching Time Test Circuit Unclamped Inductive Test Circuit VDD=200V L ≥50Ω ID=8A RL=25Ω VOUT VGS=15V D PW=1µs D.C.≤0.5% DUT 10V 0V 50Ω VDD G P.G RGS 50Ω 2SK3101LS S No.7910-2/5 2SK3101LS ID -- VDS 25 ID -- VGS 30 VDS=10V 10V 25 15V 25°C Drain Current, ID -- A Drain Current, ID -- A 20 8V 15 7V 10 VGS=6V 5 Tc= --25°C 20 75°C 15 10 5 0 0 1 0 2 3 4 5 6 7 8 9 Drain-to-Source Voltage, VDS -- V 0 10 RDS(on) -- VGS 1.0 5 10 15 20 Gate-to-Source Voltage, VGS -- V IT06561 IT06562 RDS(on) -- Tc 1.2 0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=25°C 0.8 0.7 0.6 0.5 8A 0.4 ID=16A 0.3 1A 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V yfs -- ID 2 0.8 0.6 20 10V S= G V V 8A, =15 I D= GS V , 8A I D= 0.4 0.2 0 --50 0.2 4 1.0 --25 0 25 50 75 100 VDS=10V ID=1mA Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, yfs -- S 6 25°C 7 5 5°C --2 = Tc °C 75 3 2 1.0 7 5 3 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 4 3 2 0 --100 3 0 50 100 150 Case Temperature, Tc -- °C IF -- VSD VDD=200V VGS=15V 7 Switching Time, SW Time -- ns 5 0.4 0.6 --25°C 5°C 0.1 7 5 3 2 25°C 1.0 7 5 3 2 200 IT06566 SW Time -- ID 1000 10 7 5 3 2 0.01 7 5 3 2 0.001 0.2 --50 IT06565 VGS=0V Tc= 7 Forward Current, IF -- A 5 1 2 3 2 150 IT06564 VGS(off) -- Tc 7 VDS=10V 10 125 Case Temperature, Tc -- °C IT06563 3 td (off) 2 100 7 tf 5 3 tr td(on) 2 10 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT06567 7 5 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 IT07364 No.7910-3/5 2SK3101LS Ciss, Coss, Crss -- VDS 10000 7 5 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 Ciss 2 1000 7 5 Coss Crss 3 VGS -- Qg 12 f=1MHz 2 100 7 5 3 VDS=200V ID=11A 10 8 6 4 2 2 10 0 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V ID=11A 10 7 5 3 2 1m s 10m DC 100 s ope ms rat ion Operation in this area is limited by RDS(on). 1.0 5 3 3 2 0.1 7 5 3 2 0.01 Tc=25°C Single pulse 1.0 2 3 10 15 20 25 30 35 40 45 50 55 60 65 IT06569 PD -- Ta 2.5 <1µs 10µ s 100 µs IDP=44A 5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W Drain Current, ID -- A 0 IT06568 ASO 100 7 5 3 2 2.0 1.5 1.0 0.5 0 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V 2 3 5 IT06570 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06572 PD -- Tc 45 Allowable Power Dissipation, PD -- W 30 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06571 No.7910-4/5 2SK3101LS Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode between gate and source. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2004. Specifications and information herein are subject to change without notice. PS No.7910-5/5