2SK3704 Ordering number : ENN7806A 2SK3704 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 45 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 180 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 303 mJ Avalanche Current *2 IAV 45 A Tc=25°C *1 VDD=20V, L=200µH, IAV=45A *2 L≤200µH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS(off) yfs VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=23A RDS(on)1 RDS(on)2 ID=23A, VGS=10V ID=23A, VGS=4V Ratings min typ Unit max 60 V 1 ±10 1.2 22 Marking : K3704 2.6 32 µA µA V S 10.5 14 mΩ 15 21 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1504 TS IM TB-00000498 / 21004QA TS IM TB-00000013 No.7806-1/4 2SK3704 Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 3500 Output Capacitance 500 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 350 pF Turn-ON Delay Time td(on) See specified Test Circuit. 26 ns Rise Time tr td(off) See specified Test Circuit. 175 ns See specified Test Circuit. 265 ns tf See specified Test Circuit. 210 ns nC Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=30V, VGS=10V, ID=45A 67 Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=45A 10.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=45A 10 nC Diode Forward Voltage VSD IS=45A, VGS=0 1.0 1.2 V Package Dimensions unit : mm 2063A 4.5 2.8 3.5 7.2 10.0 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 1 2 2.4 2.55 1 : Gate 2 : Drain 3 : Source 3 2.55 2.55 SANYO : TO-220ML 2.55 Switching Time Test Circuit Unclamped Inductive Test Circuit VDD=30V VIN 10V 0V L ID=23A RL=1.3Ω VIN D ≥50Ω DUT VOUT PW=10µs D.C.≤1% 10V 0V G 50Ω VDD 2SK3704 P.G 50Ω S No.7806-2/4 2SK3704 VGS=3V 20 10 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 25 20 Tc=75°C 25°C 10 --25°C 5 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 7 °C 25 5 °C 10 = Tc 7 --2 75 °C 5 3 2 1.0 7 5 0.1 7 3 5 7 1.0 2 3 5 7 10 2 3 75° C 4V S= 20 I D= 15 , VG 23A 10V S= , VG 23A I D= 10 5 --25 0 25 50 75 100 125 150 IT06617 IF -- VSD 100 7 5 3 2 VGS=0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 5 7 100 IT06618 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V SW Time -- ID IT06619 Ciss, Coss, Crss -- VDS 10000 VDD=30V VGS=10V f=1MHz 7 5 5 Ciss Ciss, Coss, Crss -- pF td(off) 3 2 tf 100 7 tr 5 td(on) 3 3 2 1000 7 Coss Crss 5 3 2 2 10 0.1 4.5 IT06615 0.01 2 Drain Current, ID -- A 1000 4.0 Case Temperature, Tc -- °C 5 2 3.5 25 0 --50 10 VDS=10V 3 2.0 RDS(on) -- Tc IT06616 yfs -- ID 1.5 30 Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 100 1.0 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 0 0 3.0 0.5 IT06614 ID=23A 15 2.5 0 0 2.0 RDS(on) -- VGS 35 Switching Time, SW Time -- ns 1.8 °C 75 C 0.4 10 25° 0.2 20 Tc=7 5°C 0 0 30 25° C 30 40 Tc= -- 40 50 25 °C 50 60 --25°C 4V Drain Current, ID -- A 60 VDS=10V 70 6V Drain Current, ID -- A 70 ID -- VGS 80 25°C Tc= --25° C ID -- VDS Tc=25°C 10V 8V 80 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT06620 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT06621 No.7806-3/4 2SK3704 VGS -- Qg 10 8 7 6 5 4 3 2 100 7 5 3 2 0 0 5 10 15 20 25 30 35 40 45 50 55 Total Gate Charge, Qg -- nC 60 65 10 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 2 3 5 7 10 2 3 5 7 100 IT06623 Drain-to-Source Voltage, VDS -- V PD -- Tc 35 2.0 1m s 10 10 ms 0m DC s op era tio n 1.0 7 5 IT06622 PD -- Ta 2.5 10 µs 0µ s 10 Operation in this area is limited by RDS(on). 0.1 0.1 70 <10µs ID=45A 3 2 1 Allowable Power Dissipation, PD -- W IDP=180A 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=30V ID=45A 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06624 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT06625 Note on usage : Since the 2SK3704 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.7806-4/4