SANYO 2SK3704

2SK3704
Ordering number : ENN7806A
2SK3704
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC Converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
Gate-to-Source Voltage
VGSS
±20
V
ID
45
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
V
180
A
2.0
W
Allowable Power Dissipation
PD
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
303
mJ
Avalanche Current *2
IAV
45
A
Tc=25°C
*1 VDD=20V, L=200µH, IAV=45A
*2 L≤200µH, single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS(off)
yfs
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=23A
RDS(on)1
RDS(on)2
ID=23A, VGS=10V
ID=23A, VGS=4V
Ratings
min
typ
Unit
max
60
V
1
±10
1.2
22
Marking : K3704
2.6
32
µA
µA
V
S
10.5
14
mΩ
15
21
mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504 TS IM TB-00000498 / 21004QA TS IM TB-00000013 No.7806-1/4
2SK3704
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
Input Capacitance
Ciss
pF
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
3500
Output Capacitance
500
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
350
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
26
ns
Rise Time
tr
td(off)
See specified Test Circuit.
175
ns
See specified Test Circuit.
265
ns
tf
See specified Test Circuit.
210
ns
nC
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=45A
67
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=45A
10.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=45A
10
nC
Diode Forward Voltage
VSD
IS=45A, VGS=0
1.0
1.2
V
Package Dimensions
unit : mm
2063A
4.5
2.8
3.5
7.2
10.0
5.6
18.1
16.0
3.2
2.4
14.0
1.6
1.2
0.7
0.75
1 2
2.4
2.55
1 : Gate
2 : Drain
3 : Source
3
2.55
2.55
SANYO : TO-220ML
2.55
Switching Time Test Circuit
Unclamped Inductive Test Circuit
VDD=30V
VIN
10V
0V
L
ID=23A
RL=1.3Ω
VIN
D
≥50Ω
DUT
VOUT
PW=10µs
D.C.≤1%
10V
0V
G
50Ω
VDD
2SK3704
P.G
50Ω
S
No.7806-2/4
2SK3704
VGS=3V
20
10
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, VDS -- V
25
20
Tc=75°C
25°C
10
--25°C
5
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
7
°C
25
5 °C
10
=
Tc
7
--2
75
°C
5
3
2
1.0
7
5
0.1
7
3
5 7 1.0
2
3
5 7 10
2
3
75°
C
4V
S=
20
I D=
15
, VG
23A
10V
S=
, VG
23A
I D=
10
5
--25
0
25
50
75
100
125
150
IT06617
IF -- VSD
100
7
5
3
2
VGS=0
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
5
7 100
IT06618
0.3
0.6
0.9
1.2
1.5
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT06619
Ciss, Coss, Crss -- VDS
10000
VDD=30V
VGS=10V
f=1MHz
7
5
5
Ciss
Ciss, Coss, Crss -- pF
td(off)
3
2
tf
100
7
tr
5
td(on)
3
3
2
1000
7
Coss
Crss
5
3
2
2
10
0.1
4.5
IT06615
0.01
2
Drain Current, ID -- A
1000
4.0
Case Temperature, Tc -- °C
5
2
3.5
25
0
--50
10
VDS=10V
3
2.0
RDS(on) -- Tc
IT06616
yfs -- ID
1.5
30
Forward Drain Current, IF -- A
Forward Transfer Admittance, yfs -- S
100
1.0
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
30
0
0
3.0
0.5
IT06614
ID=23A
15
2.5
0
0
2.0
RDS(on) -- VGS
35
Switching Time, SW Time -- ns
1.8
°C
75
C
0.4
10
25°
0.2
20
Tc=7
5°C
0
0
30
25°
C
30
40
Tc=
--
40
50
25
°C
50
60
--25°C
4V
Drain Current, ID -- A
60
VDS=10V
70
6V
Drain Current, ID -- A
70
ID -- VGS
80
25°C
Tc=
--25°
C
ID -- VDS
Tc=25°C
10V 8V
80
100
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5
7 100
IT06620
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT06621
No.7806-3/4
2SK3704
VGS -- Qg
10
8
7
6
5
4
3
2
100
7
5
3
2
0
0
5
10
15
20
25
30
35
40
45
50
55
Total Gate Charge, Qg -- nC
60
65
10
7
5
3
2
Tc=25°C
Single pulse
2
3
5 7 1.0
Allowable Power Dissipation, PD -- W
1.5
1.0
0.5
0
2
3
5 7 10
2
3
5 7 100
IT06623
Drain-to-Source Voltage, VDS -- V
PD -- Tc
35
2.0
1m
s
10
10 ms
0m
DC
s
op
era
tio
n
1.0
7
5
IT06622
PD -- Ta
2.5
10
µs
0µ
s
10
Operation in this area
is limited by RDS(on).
0.1
0.1
70
<10µs
ID=45A
3
2
1
Allowable Power Dissipation, PD -- W
IDP=180A
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
ASO
5
VDS=30V
ID=45A
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT06624
0
20
40
60
80
100
120
140
Case Temperature, Tc -- °C
160
IT06625
Note on usage : Since the 2SK3704 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2004. Specifications and information herein are subject
to change without notice.
PS No.7806-4/4