2SK3747 Ordering number : ENN7767 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 Gate-to-Source Voltage VGSS ±20 V 2 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 4 A 3.0 W Allowable Power Dissipation PD 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A Tc=25°C *1 VDD=99V, L=20mH, IAV=2A *2 L≤20mH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=1200V, VGS=0 Forward Transfer Admittance VGS(off) yfs VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=1A Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V Gate-to-Source Leakage Current Cutoff Voltage Ratings min typ Unit max 1500 V 100 ±10 2.5 0.7 3.5 1.4 10 Marking : K3747 µA µA V S 13 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81004QB TS IM TB-00000018 No.7767-1/4 2SK3747 Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 400 Output Capacitance 85 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 45 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12.5 ns Rise Time tr td(off) See specified Test Circuit. 30 ns See specified Test Circuit. 152 ns tf See specified Test Circuit. 45 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=2A 2.7 nC Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=2A Diode Forward Voltage VSD IS=2A, VGS=0 20 nC 0.88 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 2076B 16.0 3.4 5.6 2.0 21.0 22.0 5.0 8.0 3.1 2.0 20.4 4.0 2.8 2.0 1.0 0.6 2 1 : Gate 2 : Drain 3 : Source 3 3.5 1 5.45 SANYO : TO-3PML 5.45 Switching Time Test Circuit VIN Unclamped Inductive Test Circuit VDD=200V 10V 0V L ≥50Ω ID=1A RL=200Ω VIN D VOUT PW=10µs D.C.≤0.5% DUT 10V 0V 50Ω VDD G 2SK3747 P.G RGS=50Ω S No.7767-2/4 2SK3747 4.0 3.5 ID -- VGS 3.0 VDS=20V pulse 8V 2.5 6V 2.0 1.5 5V 1.0 Tc= --25°C 2.5 10V 3.0 Drain Current, ID -- A Drain Current, ID -- A ID -- VDS Tc=25°C pulse 2.0 25°C 1.5 75°C 1.0 0.5 0.5 VGS=4V 0 0 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 50 0 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 30 2 IT07130 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=1A VGS=10V Tc=75°C 25°C 10 --25°C 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V yfs -- ID °C 25 1.0 5°C --2 = °C Tc 75 3 2 3 5 7 2 0.1 3 5 7 2 1.0 Drain Current, ID -- A 100 125 150 IT07133 1.0 7 5 3 2 0.1 7 5 3 2 0.4 0.6 0.8 1.0 1.2 IT07135 Ciss, Coss, Crss -- VDS f=1MHz 3 2 Ciss, Coss, Crss -- pF tf 5 3 2 1000 7 5 Ciss 3 2 100 7 5 Coss Crss 3 tr 10 0.1 75 3 2 5 100 7 50 Diode Forward Voltage, VSD -- V td (off) 2 25 VGS=0 IT07134 VDD=200V VGS=10V 3 0 IF -- VSD 0.01 0.2 3 SW Time -- ID 5 --25 10 7 5 2 5 5 Case Temperature, Tc -- °C 3 7 10 IT07132 VDS=20V 0.1 Switching Time, SW Time -- ns 20 Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 5 18 15 0 --50 0 0 20 5°C 25°C --25°C 15 25 Tc= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 20 IT07131 RDS(on) -- Tc 30 ID=1A 25 18 td(on) 2 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT07136 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT07137 No.7767-3/4 2SK3747 VGS -- Qg 10 VDS=200V ID=2A ID=2A 2 7 6 5 4 3 2 1.0 7 5 10 D C 3 op s 0m er 2 m 10 <10µs 10 µs 10 0µ s s Drain Current, ID -- A 8 s at io n Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 0 0 10 20 30 Total Gate Charge, Qg -- nC Tc=25°C Single pulse 0.01 1.0 40 2 3 5 7 10 Allowable Power Dissipation, PD -- W 2.5 2.0 1.5 1.0 0.5 5 7 100 5 71000 2 3 IT07139 2 3 PD -- Tc 60 3.0 2 3 Drain-to-Source Voltage, VDS -- V IT07138 PD -- Ta 3.5 Allowable Power Dissipation, PD -- W IDP=4A 3 1m Gate-to-Source Voltage, VGS -- V 9 ASO 7 5 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07140 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT07141 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2004. Specifications and information herein are subject to change without notice. PS No.7767-4/4