Ordering number : ENN3450B 2SK1447LS N-Channel Silicon MOSFET 2SK1447LS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting. unit : mm 2078C [2SK1447LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.55 SANYO : TO-220FI(LS) Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 Gate-to-Source Voltage VGSS ±30 V 9 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 36 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Conditions V(BR)DSS IDSS IGSS ID=1mA, VGS=0 VDS=450V, VGS=0 VGS=±30V, VDS=0 Ratings min typ max 450 (Note) Be careful in handling the 2SK1447LS because it has no protection diode between gate and source. Marking : K1447 Unit V 1.0 mA ±100 nA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO) No.3450-1/4 2SK1447LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 Forward Transfer Admittance yfs RDS(on) VDS=10V, ID=6A 4.0 Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr td(off) Turn-OFF Delay Time Fall Time ID=6A, VGS=10V VDS=20V, f=1MHz Diode Forward Voltage 3.0 S 0.47 Ω 0.6 1600 pF 220 pF 80 pF ID=6A, VGS=10V, VDD=200V, RGS=50Ω ID=6A, VGS=10V, VDD=200V, RGS=50Ω ID=6A, VGS=10V, VDD=200V, RGS=50Ω ID=6A, VGS=10V, VDD=200V, RGS=50Ω VSD V 8.0 VDS=20V, f=1MHz VDS=20V, f=1MHz tf Unit max 25 ns 60 ns 250 ns 80 ns IS=9A, VGS=0 1.8 V Switching Time Test Circuit VDD 200V PW=1µs D.C.≤0.5% ID=6A RL=33.3Ω VGS 10V VOUT D G S RGS 50Ω ID -- VDS .0V 20 V 16 ID -- VGS V 6.0 0 =1 GS VDS=10V 5°C 20 16 5.5V Drain Current, ID -- A 24 Drain Current, ID -- A 2SK1447LS 5.0V 12 4.5V 8 4.0V 25°C Tc= --2 P.G 75°C 12 8 4 4 3.5V 0 0 0 4 8 12 16 20 Drain-to-Source Voltage, VDS -- V Cutoff Voltage, VGS(off) -- V Drain Current, ID -- A 20 16 12 8 8 10 12 14 ITR01431 VGS(off) -- Tc 5 VDS=10V VGS=10V 24 6 Gate-to-Source Voltage, VGS -- V ITR01430 ID -- Tc 28 4 2 0 24 VDS=10V ID=1mA 4 3 2 1 4 0 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 ITR01432 0 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 ITR01433 No.3450-2/4 2SK1447LS RDS(on) -- VGS 0.9 0.8 0.7 12A ID=3A 0.6 6A 0.5 0.4 0.3 0.2 0 2 4 8 6 10 12 Gate-to-Source Voltage, VGS -- V °C 75 Tc 3 2 1.0 7 5 --40 --20 0 40 20 60 80 100 120 140 160 ITR01435 SW Time -- ID td(off) VDD=200V P.W.=1µs VGS=10V D.C.≤0.5% 2 10 tf 7 tr 5 3 td(on) 2 1.0 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 3 Drain Current, ID -- A 7 5 3 Coss Crss 8 12 20 16 24 28 he sin k 0.8 0.4 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C s 10 m DC 100m s s op era tio n (on). 1.0 7 5 Operation in this area is limited by RDS Tc=25°C Single pulse 2 3 5 7 10 140 160 ITR01440 3 2 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.2 0µ s 1m 5 7 1000 ITR01439 PD -- Tc 50 1.6 at µs 10 ID=9A 3 2 32 2.0 No <1µs 10 ITR01438 PD -- Ta 2.4 3 ITR01437 IDP=36A 10 7 5 0.1 7 5 Drain-to-Source Voltage, VDS -- V 2 10 3 2 3 2 4 7 3 2 1000 100 7 5 5 3 ASO 100 7 5 Ciss 2 0 2 1.0 Drain Current, ID -- A VGS=0 f=1MHz 2 7 ITR01436 Ciss, Coss, Crss -- VDS 5 Ciss, Coss, Crss -- pF 0.2 3 2 Allowable Power Dissipation, PD -- W 0.4 Case Temperature, Tc -- °C Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S °C -25 =- V 0 V =2 A, S =6 G V ID A, =6 ID 0.6 3 C 5 0V =1 GS 5 25° 7 0.8 ITR01434 VDS=10V 10 1.0 0 --60 14 yfs -- ID 2 RDS(on) -- Tc 1.2 Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.0 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR01441 No.3450-3/4 2SK1447LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.3450-4/4