SEMiX 403GD128Dc Absolute Maximum Ratings Symbol Conditions IGBT . '+ , 1 . 0+( , 156 '+,- !% 0'(( 2'( $ 3( , 4(( $ 2+( $ 9'( 0( > '+ , 42( $ 3( , '4+ $ 2+( $ '((( $ :(( $ 2( @@@ A 0+( , 2( @@@ A 0'+ , 2((( 156'71 SPT IGBT Modules SEMiX 403GD128Dc ! :(( ; 8 < '( ; = 0'(( Units '+ , 8 SEMiX® 33c Values . 0'+ , Inverse Diode 1? . 0+( , 1?56 1?56'71? 1?6 ! 0( ; @ . '+ , Module 156 Preliminary Data ". Features !" ! !# Typical Applications $ " %" & % ! '( )* $- 0 @ Characteristics Symbol Conditions IGBT 8 8 - 1 B $ 1 8 ( - ( 8 0+ '+,- !% min. typ. max. Units 2-+ + :-+ (-4 $ . '+ , 0 0-0+ . 0'+ , (-B 0-(+ . '+ , . '+, 2 +-4 C . 0'+, +-4 :-D C 0-B '-4+ . 0'+,!"@ '-0 '-++ 0 6* '(-3 0-2 ? ? (-B ? '0+( 02+ :( '( +D+ D( F '4 F 1 ''+ $- 8 0+ . '+,!"@ '+- 8 ( E8 % % 8 3 @@@ A0+ 58 2 C 58 2 C 5. ! 18G :(( 1 ''+$ . 0'+ , (-(D+ HIJ GD 1 20-04-2007 SCH © by SEMIKRON SEMiX 403GD128Dc Characteristics Symbol Conditions Inverse Diode ? 1? ''+ $; 8 ( ?( ? ® SEMiX 33c SPT IGBT Modules 1556 E 1? ''+ $ %I% 2B+( $I> 8 0+ ; :(( 5.K ! %% min. typ. max. Units . '+ ,!"@ ' '-+ . 0'+ ,!"@ 0-3 '-4 . '+ , 0-0 0-2+ . 0'+ , (-3+ 0-' . '+ , 2 2-D C . 0'+ , 2-' 2-B C . 0'+ , ':( 'B $ > 0( F (-04 HIJ Module SEMiX 403GD128Dc Preliminary Data Features !" ! !# Typical Applications $ " %" & % ! '( )* L 5MAM @- ! '( '+ , (-D C 0'+ , 0 C (-(02 HIJ 5 ! % 6 ) 6+ 4 6 6: '-+ + N + N B(( Temperature sensor 50(( 0((, 5'++ )C (-2B49+O )C G0((I0'+ 550((7!PG0((I0'+0I0I0((Q; 4++(9'O H PHQ; G This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GD 2 20-04-2007 SCH © by SEMIKRON SEMiX 403GD128Dc Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 20-04-2007 SCH © by SEMIKRON SEMiX 403GD128Dc Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 20-04-2007 SCH © by SEMIKRON SEMiX 403GD128Dc 6R 44 5 8K 20-04-2007 SCH © by SEMIKRON