SKM 400GA128D )/1" ' Absolute Maximum Ratings Symbol Conditions IGBT 2 )/ 1 % 2 0/* 1 %67 0)** /#/ & 4* 1 5** & #** & 9 )* 0* < )/ 1 >?* & 4* 1 )#* & #** & )?** & /** & 5*@@@ C 0/* 1 5*@@@ C 0)/ 1 5*** %67)$% SPT IGBT Modules SKM 400GA128D #** : 8 . )* : ; 0)** Units )/ 1 8 SEMITRANS® 4 Values 2 0)/ 1 Inverse Diode %= 2 0/* 1 %=67 %=67)$%= %=7 0* : @ 2 0/* 1 Module %A67B 2 Features !" # $ % Typical Applications & ' ( ' )* + , Remarks %- . /** & 0** 1 &" 0 @ )/1" ' Characteristics Symbol Conditions IGBT 8AB 8 " % 0) & % 8 * " * AB 8 0/ typ. max. Units 5"/ /"/ #"5/ 2 )/ 1 *") *"# & 2 )/ 1 0 0"0/ 2 0)/ 1 *"? 0"*/ 2 )/1 > 5 D 2 0)/1 5 / D 0"? )">/ 2 0)/1@ )"0 )"// 07 , )# > = = > = % >** &" 8 0/ 2 )/1@ )/" 8 * min. E8 8 4 C)* >/** 68 2 1 0")/ F 0)* G* >0 4** G/ H >> H 'AB 'A B 68 / D 68 / D 6A2B %8I #** % >**& 2 0)/ 1 8 90/ *"*// JKL GA 1 11-09-2006 SEN © by SEMIKRON SKM 400GA128D Characteristics Symbol Conditions Inverse Diode = SEMITRANS® 4 SPT IGBT Modules %= >** &: 8 * min. typ. max. Units 2 )/ 1@ ) )"/ 2 0)/ 1@ 0"4 =* 2 )/ 1 0"0 0") = 2 )/ 1 > 5"> D 2 0)/ 1 >5/ 54 & < )* H %667 E %= >** & 'K' /)** &K< 8 0/ : #** 6A2B- '' *"0)/ JKL Module M 6NCN 0/ @" SKM 400GA128D 6AB ' 7 + 7# 7 7# A75B )* )/ 1 *"04 D 0)/ 1 *")) D *"*>4 JKL > / O )"/ A0"0B / A)B O >>* Features !" # $ % Typical Applications & ' ( ' )* This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. + , Remarks %- . /** & 0** 1 GA 2 11-09-2006 SEN © by SEMIKRON SKM 400GA128D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 11-09-2006 SEN © by SEMIKRON SKM 400GA128D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 4 11-09-2006 SEN © by SEMIKRON SKM 400GA128D UL Recognized File 63 532 - /? 8& 5 - /? 11-09-2006 SEN © by SEMIKRON