SEMIKRON SEMIX453GAR12T4S

SEMiX 453GB12T4s
Absolute Maximum Ratings
Symbol Conditions
IGBT
- () *
6
- '7) *
62:
()*4 #
'(..
89)
"
9. *
)()
"
';).
"
< (.
- '). *
'.
@
() *
)B)
"
9. *
B.)
"
';).
"
8..
"
62:;+6
Trench IGBT Modules
8.. = 3 > (. =
? '(.. Inverse Diode
6A
- '7) *
6A2:
SEMiX 453GB12T4s
Units
() *
3
SEMiX®3s
Values
6A2:;+6A
Module
SEMiX 453GAL12T4s
62:
SEMiX 453GAR12T4s
-
C B. ,,, D '7)
*
Target Data
C B. ,,, D '()
*
B...
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
%# ! #
-').*
/
!
0
23
4
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23 4
'4.54
234+(4(5 4
24+.4)5 "4 ' ,
Characteristics
Symbol Conditions
IGBT
3
3 4 6 '9 "
6
3 . 4 .
3 ') 1
typ.
max.
Units
)
)49
84)
.4;
"
- () *
.49
.4E
- '). *
.47
.49
- ()*
(4(
(4B
5
- ').*
;4;
;48
5
'49
(
(4(
(4B
- () *
- ').*,
()4 3 . ' :F
(74E
'47
A
A
'4)
A
(8..
G3
3 C9 ,,, D')
23
- () *
'47
H
23
'4E 5
#I# B... "[email protected]
23 '4E 5
#I# )... "[email protected]
;.)
9.
B)
);)
'..
J
).
J
#
# 2-C
GAL
min.
6
B). "4 3 ') - ()*,
GB
()*4 #
63K
8..
6
B)."
- '). *
.4.8)
LI&
GAR
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
Characteristics
Symbol Conditions
Inverse Diode
A 6A
B). "= 3 . A.
A
®
SEMiX 3s
Trench IGBT Modules
622:
G
6A
B). "
#I# )... "[email protected]
3 C') = 8.. 2-C/
##
min.
typ.
max.
Units
- () *,
(4')
(4B)
- '). *,
(4.)
(4B
- () *
'4;
'4)
- '). *
.4E
'4'
- () *
'4E
(4'
5
- '). *
(48
(4E
5
- '). *
;).
7.
"
@
(9
J
.4''
LI&
Module
M
SEMiX 453GB12T4s
2NDN
SEMiX 453GAL12T4s
,4 C
(.
() *
.47
5
'() *
'
5
.4.B
LI&
SEMiX 453GAR12T4s
2C
#
Target Data
:
O :)
;
:
:8
(4)
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
)
P
)
P
;..
Temperature sensor
2'..
'..* 2()) O5
.4BE;<)Q
O5
K'..I'()
22'..+RK'..I'()'IC'I'..S=
;)).<(Q
L
RLS
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
%# ! #
-').*
/
!
0
23
4
'4.54
23 4
'4.54
234+(4(5 4
24+.4)5 GB
2
GAL
GAR
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
:T ;
%
5
3K
%
27-09-2007 SCT
3"M
%
3"2
© by SEMIKRON