SKiM 270GD128D Absolute Maximum Ratings Symbol Conditions IGBT /)0 ) )6 /0 9 !" SKiM 4 SKiM 270GD128D Target Data Features +< $) 1 < Values Units 1%22 %-2 !152" -22 !'72" 8 %2 :;2 <<<1-2 !1%-" 1%- / $ $ / .) .) %-22 / %%2 !1-2" -22 !'72" $ $ Inverse diode SPT IGBT Modules , %- !42" .) , %- !42" .) , 1 / ® , %-.) # ! " # $%&' () !# # #" #* ) + # Typical Applications # # * $) #* = =6 , : )6 , %- !42" .) , %- !42" .) , 1 =6 , 12 > <> 9 , 1-2 .) Characteristics Symbol Conditions IGBT /0!" )0 $ , %-.) # /)0& )0 /0 , /)0> ) , 1% $ /0 , 1-> /)0 , /)0> 9 , %- .) 9 , %- .) 9 , %- !" .) /)0 ) , %%- $> /0 , 1- / ) ) ) C)0 /0 , 2> /)0 , %- /> , 1 6AB /0 , 2> /)0 , %- /> , 1 6AB /0 , 2> /)0 , %- /> , 1 6AB D))E00E : , %- !1%-" .) #!" #!" /)) , ?22 / ) , %%- $ D , D , ;; @ 9 , 1%- .) 0 !0" /0 8 1- / 0 !0" GA ?-> 9 , 1%- .) min. typ. max. Units ;;- -2% ?-2? / $ 1 !25" ; !-'" 11- !12-" -' !?4" / @ 15 !%1" %'- !%--" / %2 = = = A 9 , %- !1%-" .) * 17? %% %1 25 !11" @ 1?2 ?2 ??2 72 %25 !%;1" F F /)) , ?22 /> ) , %%- $ Inverse diode /= , /0) /& DD6 I = , %%- $> /0 , 2 /> 9 , %- !1%-" .) 9 , %- !1%-" .) 9 , %- !1%-" .) = , %%- $> 9 , 1%- .) /0 , 2 / #J# , $JK 0 D , D , ;; @ / / H $ K) 1;- F Thermal characteristics D!9:" 217 GJL D!9:" =L( 2%- GJL Temperature Sensor D , %- !122" .) 1 !1?4" M@ , %- !122" .) ' !%" N Mechanical data 61 6% M !6-" !6?" ; - ;?2 GD 1 28-04-2005 RAA © by SEMIKRON SKiM 270GD128D Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic 2 28-04-2005 RAA © by SEMIKRON SKiM 270GD128D Fig. 9 Transient thermal impedance of Fig. 10 Transient thermal impedance of inverse diodes IGBT ZthJC = f (tp); D = tp/tc = tp * f IGBT ZthJC = f (tp); D = tp/tc = tp * f Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE' 3 28-04-2005 RAA © by SEMIKRON SKiM 270GD128D Dimensions in mm ( ) G6 - ) G6 - This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 28-04-2005 RAA © by SEMIKRON