2N5415 2N5416 ® SILICON PNP TRANSISTORS ■ ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value 2N5415 Unit 2N5416 V CBO Collector-Base Voltage (I E = 0) -200 -350 V V CEO Collector-Emitter Voltage (I B = 0) -200 -300 V V EBO Emitter-Base Voltage (I C = 0) IC Collector Current IB Base Current o P tot Total Dissipation at T c ≤ 25 C P tot Total Dissipation at T amb ≤ 50 o C T stg Storage Temperature December 2000 -4 -6 V -1 A -0.5 A 10 W 1 -65 to 200 W o C 1/4 2N5415 / 2N5416 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 17.5 175 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. I CBO Collector Cut-off Current (I E = 0) for 2N5415 for 2N5416 I CEO Collector Cut-off Current (I B = 0) V CE = -150 V I EBO Emitter Cut-off Current (I C = 0) for 2N5415 for 2N5416 VEB = -4 V VEB = -6 V Collector-Emitter Sustaining Voltage I C = -50 mA R BE = 50Ω for 2N5416 V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = -10 mA for 2N5415 for 2N5416 V CER ∗ V CE(sat) ∗ Typ. Max. Unit -50 -50 µA µA -50 µA -20 -20 µA µA -350 V -200 -300 V V Collector-Emitter Saturation Voltage I C = -50 mA I B = -5 mA -2.5 V V BE ∗ Base-Emitter Voltage I C = -50 mA V CE = -10 V -1.5 V h FE ∗ DC Current Gain I C = -50 mA for 2N5415 for 2N5416 V CE = -10 V 30 30 h fe Small Signal Current Gain I C = -5 mA V CE = -10 V f = 1KHz 25 fT Transition frequency I C = -10 mA V CE = -10 V f = 5MHz 15 Collector Base Capacitance IE = 0 C CBO ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 VCB = -175 V VCB = -280 V V CB = -10 V f = 1MHz 150 120 MHz 25 pF 2N5415 / 2N5416 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N5415 / 2N5416 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4