BC394 ® EPITAXIAL PLANAR NPN ■ HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 180 V V CEO Collector-Emitter Voltage (I B = 0) 180 V V EBO Emitter-Base Voltage (I C = 0) 6 V Collector Current 100 mA P tot Total Dissipation at T amb ≤ 25 o C at T C ≤ 25 o C 0.4 1.4 W W T stg Storage Temperature IC Tj Max. Operating Junction Temperature December 2002 -55 to 175 o C 175 o C 1/5 BC394 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 107.1 375 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Test Conditions Min. Typ. Max. Unit 50 50 nA µA Collector Cut-off Current (I E = 0) V CB = 100 V V CB = 100 V Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 180 V I C = 10 mA 180 V 6 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) T C = 150 o C V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 10 mA I C = 50 mA I B = 1 mA I B = 5 mA 0.2 0.4 0.3 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 10 mA I C = 50 mA I B = 1 mA I B = 5 mA 0.75 0.85 0.9 V V DC Current Gain I C = 1 mA I C = 10 mA V CE = 10 V V CE = 10 V h FE ∗ C CBO Collector-Base Capacitance IE = 0 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 VCB = 10 V f = 1 MHz 30 85 100 5 pF BC394 DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency 3/5 BC394 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D G A I E F H B L C 0016043 4/5 BC394 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5