FDS8670 tm 30V N-Channel PowerTrench® MOSFET General Description Features This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. • 21 A, 30 V • High performance trench technology for extremely low • Minimal Qgd (5.5 nC typical) Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V RDS(ON) and gate charge Applications • 100% RG tested (0.9 Ω typical) • 100% UIL tested • RoHS Compliant High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load • D D D D SO-8 S S S G Absolute Maximum Ratings Symbol Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation 6 3 7 2 8 1 – Continuous (Note 1a) Thermal Resistance, Junction-to-Case V 21 A 2.5 (Note 1b) 1.2 V W 1 433 –55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 Thermal Characteristics Thermal Resistance, Junction-to-Ambient ±20 105 (Note 1c) RθJC Units (Note 1a) Single Pulse Avalanche Energy (Note 3) Operating and Storage Junction Temperature Range RθJA Ratings 30 – Pulsed EAS TJ, TSTG 4 TA=25oC unless otherwise noted Parameter VDSS 5 Package Marking and Ordering Information mJ Device Marking Device Reel Size Tape width Quantity FDS8670 FDS8670 13’’ 12mm 2500 units ©2008 Fairchild Semiconductor Corporation FDS8670 Rev D1 (W) FDS8670 30V N-Channel PowerTrench® MOSFET January 2008 Symbol Parameter Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Test Conditions Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA ID = 250 µA On Characteristics ID = 250 µA Min Typ Max Units 30 ID = 250 µA, Referenced to 25°C V mV/°C 39 (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, 1 VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125°C 3.3 4.2 4.4 gFS Forward Transconductance VDS = 10 V, 118 ID = 250 µA, Referenced to 25°C Input Capacitance Coss Output Capacitance ID = 21 A VDS = 15 V, f = 1.0 MHz Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time 3 V mV/°C –5 Dynamic Characteristics Ciss 1.4 V GS = 0 V, 3.7 5.0 5.5 S 4040 pF 1730 pF 160 f = 1.0 MHz 0.2 mΩ 0.9 pF 1.5 Ω (Note 2) VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 21 ns 11 20 ns td(off) Turn–Off Delay Time 56 90 ns tf Turn–Off Fall Time 68 108 ns Qg(TOT) Total Gate Charge at VGS = 10V 58.5 82 nC Qg(TOT) Total Gate Charge at VGS = 5V 30 42 Qgs Gate–Source Charge 9.5 nC Qgd Gate–Drain Charge 5.5 nC VDD = 15 V, ID = 21 A Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time IRM Diode Reverse Recovery Current Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 2.1 A IF = 21 A, dIF/dt = 100 A/µs (Note 2) 0.7 51 1.2 nC V ns 1.5 A 37 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1 in pad of 2 oz copper b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 17A, VDD = 30V, VGS = 10V FDS8670 Rev D1 (W) FDS8670 30V N-Channel PowerTrench® MOSFET Electrical Characteristics VGS = 10V ID, DRAIN CURRENT (A) 87.5 3.4 3.0V 6.0V VGS = 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 105 3.5V 70 4.5V 52.5 35 2.5V 17.5 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 4.0V 4.5V 6.0V 1 10V 35 70 ID, DRAIN CURRENT (A) 105 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.011 ID = 21A VGS = 10V ID = 10.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 1.6 0 1.4 1.2 1 0.8 0.008 TA = 125oC 0.005 TA = 25oC 0.002 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 2 150 1000 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 70 TA =125oC 6 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 105 35 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. ID, DRAIN CURRENT (A) 2.2 0.4 2 Figure 1. On-Region Characteristics. 1.6 2.8 -55oC VGS = 0V 100 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 o 25 C 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.0001 3.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8670 Rev D1 (W) FDS8670 30V N-Channel PowerTrench® MOSFET Typical Characteristics 5000 f = 1MHz VGS = 0 V ID = 21A 4000 8 VDS = 10V 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 15V 4 Ciss 3000 2000 Coss 1000 2 Crss 0 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 0 60 Figure 7. Gate Charge Characteristics. 30 100 10 10s 1 100µs 1ms 10ms 100ms 1s DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 80 60 40 20 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 1000 100 5 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 0.001 0.0001 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8670 Rev D1 (W) FDS8670 30V N-Channel PowerTrench® MOSFET Typical Characteristics (continued) The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm ® PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 tm SupreMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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