STMICROELECTRONICS BAS70-07S

BAS70-07S / BAS70-08S
®
RF DETECTION DIODE
FEATURES AND BENEFITS
■
■
■
LOW DIODE CAPACITANCE
LOW SERIES INDUCTANCE AND RESISTANCE
SURFACE MOUNT PACKAGE
DESCRIPTION
Dual and Triple Schottky diode in SOT323-6L
package. This diode is intented to be used in RF
application for signal detection and temperature
compensation.
SOT323-6L
BAS70-08S SCHEMATIC DIAGRAM
BAS70-07S SCHEMATIC DIAGRAM
1
6
1
6
2
5
2
5
3
4
3
4
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VR
Continuous reverse voltage
70
V
IF
Continuous forward current
70
mA
IFRM
Repetitive peak forward current
70
mA
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
1
A
Power Dissipation
Ta = 55°C
250
mW
- 65 to +150
°C
P
Tstg
Storage temperature range
Tj
Maximum junction temperature
150
°C
TL
Maximum temperature for soldering
260
°C
December 2001 - Ed: 2A
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BAS70-07S / BAS70-08S
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient on printed circuit board FR4
with recommended pad layout
Value
Unit
500
°C/W
STATIC ELECTRICAL CHARACTERISTICS (Tj = 25°C otherwise specified)
Symbol
VF
IR
VBR
Parameter
Max.
Unit
IF = 1 mA
0.41
V
IF = 10 mA
0.75
V
IF = 15 mA
1
V
Reverse leakage current
VR = 70 V
10
µA
Breakdown voltage
IR = 10 µA
Forward voltage drop
Tests Conditions
Min.
Typ.
70
V
ELECTRICAL CHARACTERISTICS
Symbol
2/4
Parameter
Tests Conditions
C
Junction capacitance
VR = 0 V
F = 1 MHz
RF
Differential forward
resistance
IF = 10 mA
F = 100 MHz
Ls
Series inductance
Min.
Typ.
Max.
Unit
2
pF
30
Ohm
1.5
nH
BAS70-07S / BAS70-08S
Fig. 1: Forward voltage drop versus forward
current (typical values).
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
IFM(mA)
1.E+02
1.E+02
Tj = 150°C
1.E+01
1.E+01
Tj = 85°C
1.E+00
Tj=150°C
1.E-01
Tj=125°C
1.E+00
Tj=85°C
Tj = 25°C
1.E-02
Tj=25°C
VFM(V)
Tj=-40°C
VR(V)
1.E-01
1.E-03
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 3: Differential forward resistance versus
forward current (typical values).
0
10
20
30
40
50
60
70
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
Rf(Ω)
C(pF)
1000
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F = 10kHz
Tj = 25°C
100
IF(mA)
10
0.1
1.0
VR(V)
0
10.0
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board, epoxy FR4).
F = 1MHz
Vosc = 30mVRMS
Tj = 25°C
10
20
30
40
50
60
70
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (printed
circuit board, epoxy FR4).
Rth(j-a)
Zth(j-a)(°C/W)
1000.0
600
550
500
100.0
450
400
350
tp(s)
10.0
1.E-02
S(mm²)
300
1.E-01
1.E+00
1.E+01
1.E+02
0
5
10
15
20
25
30
35
40
45
50
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BAS70-07S / BAS70-08S
PACKAGE MECHANICAL DATA
SOT323-6L
DIMENSIONS
A2
A
REF.
A1
D
e
e
E
HE
c
b
Inches
Max.
Min.
Max.
A
0.8
1.1
0.031
0.043
A1
0
0.1
0
0.004
A2
0.8
1
0.031
0.039
b
0.15
0.3
0.006
0.012
c
0.1
0.18
0.004
0.007
D
1.8
2.2
0.071
0.086
E
1.15
1.35
0.045
0.053
e
Q1
Millimeters
Min.
0.65 Typ.
0.025 Typ.
HE
1.8
2.4
0.071
0.094
Q1
0.1
0.4
0.004
0.016
FOOTPRINT DIMENSIONS (millimeters)
0.3mm
1mm
2.9mm
1mm
0.35mm
MARKING
■
Type
Marking
BAS70-07S
D32
BAS70-08S
D33
Package
Weight
Base qty
Delivery mode
SOT323-6L
0.006g
3000
Tape & reel
Epoxy meets UL94, V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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