STPS3L40S ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS n n n Negligible switching losses Low thermal resistance Low forward voltage drop DESCRIPTION Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMC, this device is intended for use in DC/DC chargers. SMC (JEDEC DO-214AB) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current Tc = 120°C δ = 0.5 3 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp=2 µs square F=1kHz 1 A Tstg Storage temperature range - 65 to + 175 °C 150 °C 10000 V/µs Tj dV/dt * : Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) April 2000 - Ed: 1A 1/4 STPS3L40S THERMAL RESISTANCES Symbol Parameter Rth(j-l) Value Unit 18 °C/W Junction to leads STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Tests conditions Reverse leakage current Tj = 25°C Typ. Max. 100 Unit µA 16 40 mA 0.5 V VR = VRRM Tj = 125°C VF * Forward voltage drop Tj = 25°C IF = 3 A Tj = 125°C IF = 3 A Tj = 25°C IF = 6 A 0.44 0.52 0.58 0.62 IF = 6 A Tj = 125°C 0.40 Pulse test : * tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.30 x IF(AV) + 0.047 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature(δ = 0.5). PF(av)(W) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 IF(av)(A) δ = 0.05 δ = 0.1 δ = 0.2 3.5 δ = 0.5 Rth(j-a)=Rth(j-l) 3.0 2.5 δ=1 2.0 Rth(j-a)=75°C/W 1.5 1.0 T IF(av) (A) 0.5 1.0 1.5 2.0 δ=tp/T 2.5 3.0 T 0.5 δ=tp/T tp 3.5 4.0 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). 0.0 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout). IM(A) Zth(j-a)/Rth(j-a) 14 1.0 12 0.8 10 Ta=25°C 8 δ = 0.5 Ta=75°C 6 0.4 4 Ta=125°C IM 2 t t(s) δ=0.5 0 1E-3 2/4 0.6 1E-2 δ = 0.2 δ = 0.1 0.2 tp(s) Single pulse 1E-1 1E+0 0.0 1E-1 1E+0 1E+1 1E+2 1E+3 STPS3L40S Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 600 5E+1 F=1MHz Tj=25°C Tj=125°C 1E+1 Tj=100°C 1E+0 100 1E-1 Tj=25°C 1E-2 VR(V) VR(V) 1E-3 0 5 10 15 20 25 30 35 40 Fig. 7: Forward voltage drop versus forward current (maximum values). 10 2 5 10 20 40 Fig. 8: Non repetitive surge peak forward current versus number of cycles. IFM(A) IFSM(A) 50.00 10.00 1 80 F=50Hz Tj initial=25°C 70 Tj=125°C (Typical values) 60 50 Tj=125°C 1.00 40 Tj=25°C 30 0.10 0.01 0.0 20 10 VFM(V) 0.2 0.4 0.6 0.8 0 1.0 1.2 1.4 1.6 Number of cycles 1 10 100 1000 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) 100 80 60 40 20 S(Cu) (cm²) 0 0 1 2 3 4 5 3/4 STPS3L40S PACKAGE MECHANICAL DATA SMC E1 DIMENSIONS REF. D A1 A2 b c E E1 E2 D L E A1 A2 C L E2 Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 b FOOT PRINT (in millimeters) 3.3 2.0 n 4.2 2.0 Ordering type Marking Package Weight Base qty Delivery mode STPS3L40S S3L4 SMC 0.24g 2500 Tape and reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4