BAT74 ® SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNT DEVICE A2 A1 A2 K1 K2 A1 K2 K1 DESCRIPTION Two separate Schottky barrier diodes encapsulated in a SOT-143 small SMD package. SOT-143 ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current IFSM Surge non repetitive forward current (tp=10ms sinusoidal) Ptot Power Dissipation (note 1) Tstg Maximum storage temperature range Value Unit 30 V 0.5 A 1 A 250 mW - 65 to +150 °C δ = 0.33 Tamb = 50°C Tj Maximum operating junction temperature * 150 °C TL Maximum temperature for soldering during 10s 260 °C Note 1: Ptot is the total dissipation of both diodes * : dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj June 1999 - Ed: 3A 1/4 BAT74 THERMAL RESISTANCE Symbol Parameter Value Unit 400 °C/W Junction to Ambient (*) Rth (j-a) (*) Mounted on epoxy board with recommended pad layout. STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameters VF * Tests conditions Forward voltage drop IR ** Tj = 25°C Reverse leakage current Tj = 25°C Min. Typ. Max. Unit IF = 0.1 mA 240 mV IF = 1 mA 320 IF = 10 mA 400 IF = 30 mA 500 IF = 100 mA 900 VR = 30 V µA 1 Tj = 100°C 100 * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Pulse test: DYNAMIC CHARACTERISTICS (Tj = 25 °C) Symbol Parameters Tests conditions C Junction Capacitance Tj = 25°C VR = 1 V trr Reverse Recovery Time IF = 10 mA Irr = 1 mA IR = 10 mA Tj = 25°C RL = 100 Ω Fig.1 : Average forward power dissipation versus average forward current. δ = 0.1 0.25 δ = 0.2 δ = 0.33 δ = 0.05 δ=1 0.15 0.10 T 0.05 IF(av) (A) 0.05 Max. Unit 10 pF 5 ns F = 1 MHz IF(av)(A) 0.20 0.00 0.00 Typ. Fig.2 : Average forward current versus ambient temperature ( δ = 0.33). PF(av)(W) 0.30 2/4 Min. 0.10 0.15 δ=tp/T 0.20 0.25 tp 0.30 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 T δ=tp/T 0 25 Tamb(°C) tp 50 75 100 125 150 BAT74 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1E-3 1E+0 δ = 0.5 δ = 0.2 1E-1 Ta=25°C δ = 0.1 Ta=50°C 1E-2 Ta=100°C T IM Single pulse t t(s) δ=0.5 1E-2 tp(s) 1E-1 1E+0 Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). 1E-3 1E-3 1E-2 1E-1 δ=tp/T 1E+0 1E+1 tp 1E+2 Fig.6 : Junction capacitance versus reverse voltage applied. IR(µA) IR(µA) 1E+2 1E+4 VR=30V Tj=100°C 1E+3 1E+1 1E+2 1E+0 Tj=50°C 1E-1 Tj=25°C 1E+1 1E+0 1E-1 1E-2 Tj(°C) VR(V) 0 5 10 15 20 25 30 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). 1E-2 0 25 50 75 100 125 150 Fig.8 : Forward voltage drop versus forward current (typical values). C(pF) IFM(A) 10 5E-1 F=1MHz Tj=25°C 1E-1 5 Tj=100°C 1E-2 2 Tj=50°C 1E-3 VFM(V) VR(V) 1 1 2 5 Tj=25°C 10 20 30 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3/4 BAT74 PACKAGE MECHANICAL DATA SOT-143 DIMENSIONS D REF. e1 C Min. L E H e2 Millimeters b b1 A A1 A A1 B B1 C D E e1 e2 H S Typ. Max. 0.89 1.12 0.013 0.1 0.76 0.94 0.37 0.51 0.085 0.18 2.8 3.04 1.2 1.4 1.92 BSC 0.2 BSC 2.1 2.64 0.55 ref Inches Min. Typ. Max. 0.350 0.441 0.005 0.039 0.299 0.370 0.146 0.201 0.033 0.071 1.102 1.197 0.472 0.551 0.756 BSC 0.0787 BSC 0.827 1.039 0.217 ref FOOTPRINT DIMENSIONS (in millimeters) 1.92 0.95 0.2 2.25 1.1 0.65 Ordering type Marking Package Weight Base qty Delivery mode BAT74 D89 SOT-143 0.01g 3000 Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4