FAIRCHILD FDS6574A_08

FDS6574A
May 2008
FDS6574A
tmM
20V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 16 A, 20 V.
RDS(ON) = 6 mΩ @ VGS = 4.5 V
RDS(ON) = 7 mΩ @ VGS = 2.5 V
RDS(ON) = 9 mΩ @ VGS = 1.8 V
• Low gate charge
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• High power and current handling capability
• RoHS Compliant
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
16
A
– Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
PD
80
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.0
–55 to +175
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6574A
FDS6574A
13’’
12mm
2500 units
2008 Fairchild Semiconductor Corporation
FDS6574A Rev B2(W)
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V
VDS = 0 V
–100
nA
ID = 250 µA
1.5
V
On Characteristics
VGS = 0 V,
ID = 250 µA
20
V
10
ID = 250 µA, Referenced to 25°C
mV/°C
µA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
0.4
0.6
–2.7
ID(on)
On–State Drain Current
VGS = 4.5 V,
ID = 16 A
VGS = 2.5 V,
ID = 15 A
VGS = 1.8 V,
ID = 13 A
VGS = 4.5 V, ID = 16 A,TJ=125°C
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 16 A
115
S
VDS = 10V,
f = 1.0 MHz
V GS = 0 V,
7657
pF
1432
pF
775
pF
40
4
4.4
5
5.3
mV/°C
6
7
9
9
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
(Note 2)
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
19.5
35
ns
22
36
ns
Turn–Off Delay Time
173
277
ns
Turn–Off Fall Time
82
131
ns
75
105
nC
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 10 V,
VGS = 4.5 V
ID = 16 A,
9
nC
17
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
(Note 2)
0.56
2.1
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6574A Rev B2(W)
FDS6574A
Electrical Characteristics
FDS6574A
Typical Characteristics
2
VGS = 4.5V
2.5V
ID, DRAIN CURRENT (A)
3.5V
80
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
100
1.8V
1.5V
60
40
20
0
0
0.5
1
1.5
1.8
VGS = 1.5V
1.6
1.4
1.8V
1.2
2.5V
0
20
40
60
80
100
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.012
ID = 16A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 8A
0.01
0.008
TA = 125oC
0.006
0.004
TA = 25oC
0.002
-50
-25
0
25
50
75
100
125
150
175
1
2
o
Figure 3. On-Resistance Variation with
Temperature.
100
25oC
IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
75
4
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
90
VDS = 5V
3
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
ID, DRAIN CURRENT (A)
3.5V
0.8
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
3.0V
1
125oC
60
45
30
15
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
0.8
1.1
1.4
1.7
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6574A Rev B2(W)
FDS6574A
Typical Characteristics
10000
VDS = 5V
ID = 16 A
10V
4
15V
3
2
6000
4000
COSS
1
2000
0
0
CRSS
0
15
30
45
60
75
90
0
Qg, GATE CHARGE (nC)
5
10
20
Figure 8. Capacitance Characteristics.
50
100
100µs
RDS(ON) LIMIT
10
1
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 125oC/W
0.1
P(pk), PEAK TRANSIENT POWER (W)
1000
1ms
10ms
100ms
1s
10s
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
100
0.01
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
CISS
8000
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA(t) = r(t) *R θJA
0.2
0.1
o
R θ JA = 125 C/W
0.1
0.05
0.01
P(pk)
0.02
0.01
t1
t2
TJ - T A = P * R θ JA(t)
Duty Cycle, D = t 1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6574A Rev B2(W)
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1.
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(a) are intended for surgical implant into the body or (b)
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properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDS6574A Rev B2(W)