FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). • 6.5 A, 20 V. • Optimized for use in battery protection circuits Applications • ±10 VGSS allows for wide operating voltage range • Battery protection • Low gate charge RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.043 Ω @ VGS = 2.5 V. • Load switch • Power management D1 D1 5 D2 6 D2 4 3 Q1 7 SO-8 S2 G2 S1 G1 Absolute Maximum Ratings Symbol 8 2 Q2 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±10 V ID Drain Current 6.5 A – Continuous (Note 1a) – Pulsed PD 20 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation TJ, TSTG (Note 1a) W 1.6 (Note 1b) 1 (Note 1c) 0.9 -55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9926A FDS9926A 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS9926A Rev D (W) FDS9926A September 2000 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA 1.5 V On Characteristics 20 V 14 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = 4.5 V, ID = 6.5 A ID = 5.4 A VGS = 2.5 V, VGS= 4.5 V, ID =6.5A, TJ=125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 3 A VDS = 10 V, f = 1.0 MHz V GS = 0 V, 0.5 1 -3 0.025 0.036 0.035 mV/°C 0.030 0.043 0.050 15 Ω A 11 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 700 pF 175 pF 85 pF (Note 2) 8 16 ns 10 18 ns Turn–Off Delay Time 18 29 ns Turn–Off Fall Time 5 10 ns 7 10 VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 3A, nC 1.2 nC 1.9 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.65 1.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9926A Rev D (W) FDS9926A Electrical Characteristics FDS9926A Typical Characteristics 3 20 3.0V 3.5V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5V 15 2.0V 10 5 1.5V 2.5 VGS = 2.0V 2 2.5V 1.5 3.0V 4.0V 4.5V 0.5 0 0 0.5 1 1.5 0 2 5 10 15 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 1.6 ID = 3A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 1 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 ID = 1.5 A 0.08 0.06 TA = 125oC 0.04 0.02 TA = 25oC 0 150 1 2 3 4 5 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 ID, DRAIN CURRENT (A) VDS = 5V IS, REVERSE DRAIN CURRENT (A) 20 TA = -55oC 25 15 125oC 10 5 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9926A Rev D (W) FDS9926A Typical Characteristics 1000 VDS = 5V ID = 3A f = 1MHz VGS = 0 V 10V 4 800 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 600 400 1 200 0 0 COSS CRSS 0 2 4 6 8 10 0 4 Qg, GATE CHARGE (nC) 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100µs 1ms 10 10ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 t1, TIME (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 135°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9926A Rev D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1