FDS7064N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 16.5 A, 30 V RDS(ON) = 7.0 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • Fast switching • Synchronous rectifier • FLMP SO-8 package: Enhanced thermal • DC/DC converter performance in industry-standard package size S D DS DS D DS Bottomless SO-8 Pin 1 SO-8 G SS G S SS S Absolute Maximum Ratings Symbol 5 Bottom-side Drain Contact 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ± 12 V ID Drain Current (Note 1a) 16.5 A PD Power Dissipation for Single Operation (Note 1a) 3.0 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C – Continuous – Pulsed 60 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 40 °C/W 0.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7064N7 FDS7064N7 13’’ 12mm 2500 units 2004 Fairchild Semiconductor Corporation FDS7064N7 Rev D1 (W) FDS7064N7 February 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA 2 V BVDSS ∆BVDSS ∆TJ IDSS On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) gFS 30 ID = 250 µA, Referenced to 25°C V 23 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C 0.8 1.2 –4.3 mV/°C VGS = 4.5 V, ID = 16.5 A VGS = 4.5 V, ID = 16.5 A,TJ = 125°C VDS = 5 V, ID = 16.5 A 5.7 8.4 112 7.0 10.5 VDS = 15 V, V GS = 0 V, f = 1.0 MHz 3355 pF 522 pF 209 pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 17 30 ns 13 23 ns td(off) Turn–Off Delay Time 54 86 ns tf Turn–Off Fall Time 26 42 ns 30 48 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, ID = 16.5 A, VGS = 4.5 V nC 6.3 nC 7.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage 0.7 (Note 2) 2.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7064N7 Rev D1 (W) FDS7064N7 Electrical Characteristics FDS7064N7 Typical Characteristics 3 VGS = 10V 3.5V 4.5V 50 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 3.0V 2.5V 40 30 2.0V 20 10 VGS = 2.0V 2.5 2 2.5V 1.5 3.0V 0 0.5 1 0 1.5 10 10V 20 30 40 50 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.018 1.8 ID = 16.5A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.5 0 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 ID = 8A 0.014 TA = 125oC 0.01 0.006 TA = 25oC 0.002 175 1 2.5 TJ, JUNCTION TEMPERATURE (oC) 4 5.5 7 8.5 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 3.5V 1 40 30 TA = 125oC 20 25oC 10 -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 1.25 1.5 1.75 2 2.25 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7064N7 Rev D1 (W) FDS7064N7 Typical Characteristics 4500 VDS = 10V ID = 16.5A 4000 15V 4 3 2 3000 2500 2000 1500 1000 1 COSS 500 CRSS 0 0 0 5 10 15 20 25 30 0 35 Figure 7. Gate Charge Characteristics. 10 15 20 25 30 Figure 8. Capacitance Characteristics. 100 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10 10ms 100ms 1s DC 1 0.1 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) VGS = 10V SINGLE PULSE RθJA = 88oC/W TA = 25oC 0.01 0.01 0.1 1 10 30 20 10 0 0.01 100 SINGLE PULSE RθJA = 88°C/W TA = 25°C 40 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 3500 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) + R θJA R θJA = 85 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 T J - T A = P * R θJA (t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7064N7 Rev D1 (W) FDS7064N7 Dimensional Outline and Pad Layout FDS7064N7 Rev D1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8