FDS7788 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V RDS(ON) = 5.0 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching speed Applications • High power and current handling capability • DC/DC converter • High performance trench technology for extremely low RDS(ON) • Load switch • Motor drives D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 18 A – Continuous (Note 1a) – Pulsed 50 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0 –55 to +150 °C (Note 1a) 50 °C/W (Note 1) 30 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7788 FDS7788 13’’ 12mm 2500 units 2005 Fairchild Semiconductor Corporation FDS7788 Rev F (W) FDS7788 February 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics 30 V 25 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –5.4 3.0 3.8 4.3 ID(on) On–State Drain Current VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, gFS Forward Transconductance VDS = 10 V, ID = 18 A 112 S VDS = 15 V, f = 1.0 MHz 3845 pF 1 ID = 18 A ID = 17 A ID = 18 A, TJ = 125°C VDS = 5 V 1.9 3 V mV/°C 4.0 5.0 6.3 30 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) V GS = 0 V, VGS = 15 mV, f = 1.0 MHz 930 pF 368 pF 1.4 Ω (Note 2) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 15 27 ns 13 23 ns Turn–Off Delay Time 62 99 ns tf Turn–Off Fall Time 36 58 ns Qg Total Gate Charge 37 48 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5.0 V ID = 18 A, 10 nC 14 nC Drain–Source Diode Characteristics and Maximum Ratings trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VSD VGS = 0 V, IS = 2.1 A IF = 18 A, diF/dt = 100 A/µs (Note 2) 0.7 1.2 V 39 nS 33 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7788 Rev F(W) FDS7788 Electrical Characteristics FDS7788 Typical Characteristics 2.2 80 VGS = 10V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 3.5V 4.5V 60 40 20 3.0V 0 VGS = 3.5V 2 1.8 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10V 1 0.8 0 0.5 1 1.5 0 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 60 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.01 1.6 ID = 18A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) 1.4 1.2 1 0.8 0.6 ID = 9A 0.008 0.006 TA = 125oC 0.004 TA = 25oC 0.002 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 80 IS, REVERSE DRAIN CURRENT (A) VGS = 0V ID, DRAIN CURRENT (A) VDS = 5V 60 40 TA =125oC 25oC 20 -55oC 0 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7788 Rev F(W) FDS7788 Typical Characteristics 5000 VDS = 10V ID = 18A f = 1MHz VGS = 0 V 15V 4000 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 CISS 3000 2000 COSS 2 1000 0 0 CRSS 0 20 40 60 0 80 5 Figure 7. Gate Charge Characteristics. 20 25 30 50 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE o RθJA = 125 C/W 0.1 o TA = 25 C SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 100 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS7788 Rev F(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15