FDR6580 N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 11.2 A, 20 V. Applications • High power and current handling capability in a RDS(ON) = 9 mΩ @ VGS = 4.5 V RDS(ON) = 11 mΩ @ VGS = 2.5 V • High performance trench technology for extremely low RDS(ON) smaller footprint than SO8 • Synchronous rectifier • DC/DC converter S D D S D TM SuperSOT -8 D 4 6 3 7 2 8 1 D Absolute Maximum Ratings Symbol G 5 o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 11.2 A PD Power Dissipation for Single Operation (Note 1a) 1.8 (Note 1b) 1.0 – Continuous – Pulsed 50 (Note 1c) TJ, TSTG W 0.9 -55 to +150 °C (Note 1a) 70 °C/W (Note 1) 20 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDR6580 FDR6580 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDR6580 Rev C(W) FDR6580 July 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA VDS = VGS, ID = 250 µA 1.5 V On Characteristics 20 ID = 250 µA, Referenced to 25°C V 11 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient 0.5 RDS(on) Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 4.5 V, ID = 11.2 A VGS = 2.5 V, ID = 10.1 A VGS = 4.5 V, ID = 11.2 A, TJ 125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 11.2 A 70 VDS = 10 V, f = 1.0 MHz V GS = 0 V, 3829 pF 854 pF 446 pF ID = 250 µA, Referenced to 25°C 0.9 -3.5 5.2 6.6 7.1 mV/°C 9 11 13 25 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 15 27 ns 20 32 ns Turn–Off Delay Time 62 99 ns tf Turn–Off Fall Time 39 62 ns Qg Total Gate Charge 34 48 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5V ID = 11.2 A, 5.9 nC 9.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.5 A Voltage (Note 2) 0.6 1.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 70°/W when 2 mounted on a 1in pad of 2 oz copper b) 125°/W when 2 mounted on a .04 in pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDR6580 Rev C(W) FDR6580 Electrical Characteristics FDR6580 Typical Characteristics 100 2 VGS = 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V ID, DRAIN CURRENT (A) 3.0 80 2.0V 60 40 20 0 0 0.5 1 1.5 2 2.5 1.8 VGS = 2.0V 1.6 1.4 2.5V 1.2 3.0V 4.5V 0.8 3 0 20 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.016 ID = 11.2A VGS = 4.5V ID = 5.6A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 0.014 0.012 o TA = 125 C 0.01 0.008 TA = 25oC 0.006 0.004 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 80 100 o IS, REVERSE DRAIN CURRENT (A) 25 C TA = -55oC VDS = 5V o 125 C ID , DRAIN CURRENT (A) 3.5V 1 60 40 20 VGS = 0V 10 o TA = 125 C 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR6580 Rev C(W) FDR6580 Typical Characteristics 6000 ID = 11.2A f = 1 MHz VGS = 0 V VDS = 5V 5000 10V 4 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 4000 3000 2000 COSS 1 1000 CRSS 0 0 0 10 20 30 40 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 50 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 10s 1 DC VGS = 4.5V SINGLE PULSE o RθJA = 135 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA o 0.2 0.1 RθJA = 135 C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 0.01 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDR6580 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3