HUR3020CT, HUR3030CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 HUR3020CT HUR3030CT Symbol VRRM V 200 300 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS IAR o TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Ptot TC=25oC Md mounting torque typical Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Maximum Ratings Unit 35 2 x 15 A 140 A 0.8 mJ 0.3 A -55...+175 175 -55...+150 TVJ TVJM Tstg Weight Dim. o C 95 W 0.4...0.6 Nm 2 g HUR3020CT, HUR3030CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 100 0.5 uA mA VF IF=15A; TVJ=150oC TVJ=25oC 1.21 1.68 V RthJC RthCH trr IRM 1.6 0.5 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC 30 o VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C K/W ns 2.7 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR3020CT, HUR3030CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 40 20 500 TVJ = 100°C nC A VR = 150V 400 30 IF TVJ = 100°C A VR = 150V IF = 30A 15 IF = 15A IF = 30A 300 TVJ = 100°C 20 IRM Qr TVJ = 150°C IF = 7.5A IF = 15A TVJ = 25°C 10 IF = 7.5A 200 10 5 100 0 0 V 1 0 100 2 0 A/us 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 80 trr 1.2 0.85 TVJ = 100°C IF = 15A 12 VFR IF = 30A us 0.80 tfr tfr VFR 10 IF = 15A 1.0 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt VR = 150V 60 400 V 70 Kf 200 14 TVJ = 100°C ns 0 0.75 IF = 7.5A IRM 50 8 0.70 40 6 0.65 Qr 0.8 0.6 30 0 40 80 120 °C 160 4 0 TVJ 200 400 600 800 1000 A/us 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.60 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC 0.1 0.01 0.001 0.00001 0 0.0001 0.001 0.01 s 0.1 t Fig. 7 Transient thermal resistance junction to case 1 Rthi (K/W) ti (s) 0.908 0.35 0.342 0.005 0.0003 0.017