STMICROELECTRONICS BUL213_03

BUL213
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125oC
APPLICATIONS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL213 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
3
A
Collector Peak Current (t p < 5 ms)
6
A
IC
I CM
1300
V
600
V
Base Current
2
A
I BM
Base Peak Current (t p < 5 ms)
4
A
P tot
Total Dissipation at T c = 25 o C
60
IB
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
February 2003
W
-65 to 150
o
C
150
o
C
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BUL213
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
2.08
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1300 V
V CE = 1300 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 600 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
Min.
Typ.
T c = 125 o C
L = 25 mH
Max.
Unit
100
500
µA
µA
250
µA
600
V
9
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
I B = 0.1 A
I B = 0.2 A
0.5
0.9
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
I B = 0.1 A
I B = 0.2 A
1.2
1.5
V
V
DC Current Gain
I C = 0.35 A
I C = 10 mA
V CE = 3 V
V CE = 5 V
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
I B1 = 0.2 A
L = 200 µH
V CL = 400 V
I B2 = -0.4 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
I B1 = 0.2 A
L = 200 µH
V EBO
h FE ∗
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
V CL = 400 V
I B2 = -0.4 A
T c = 125 o C
16
12
36
4
250
5.2
380
6
420
µs
ns
µs
ns
BUL213
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BUL213
Reverse Biased SOA
Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
4/6
BUL213
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
5/6
BUL213
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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