BUL116D ® MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS 3 ■ DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 400 V V CEO Collector-Emitter Voltage (I B = 0) 200 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 5 A 10 A A IC I CM Collector Peak Current (t p < 5 ms) Base Current 2 I BM Base Peak Current (t p < 5 ms) 4 A P tot Total Dissipation at T c = 25 o C 60 W T stg Storage Temperature IB Tj Max. Operating Junction Temperature February 2003 -65 to 150 o C 150 o C 1/6 BUL116D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 2.08 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 400 V V CE = 400 V V EBO Emitter-Base Voltage (I C = 0) I E = 10 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA V CE = 200 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A IC = 5 A I B = 0.1 A IB = 1 A DC Current Gain I C = 10 mA IC = 5 A V CE = 5 V V CE = 5 V h FE ∗ = = = = 0.5 A 1A 3A 5A IB IB IB IB = = = = RESISTIVE LOAD Rise Time Fall Time Storage Time V CC = 125 V I B1 = 0.4 A t p = 30 µs IC = 2 A I B2 = -0.4 A (see figure 2) ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE = -5 V V clamp = 180 V I B1 = 0.4 A L = 500 µH (see figure 1) VF Diode Forward Voltage I C = 2 A Unit 100 500 µA µA V 200 V 10 8 250 µA 0.25 0.4 0.7 1.2 V V V V 1.1 1.5 V V 20 0.2 0.2 1.4 0.4 Derating Curve µs µs µs µs µs 0.5 0.1 1.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 Max. 9 50 mA 0.1 A 0.6 A 1A tr tf ts Safe Operating Area Typ. T c = 125 o C Collector Cut-off Current (I B = 0) I CEO Min. V BUL116D DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Time Resistive Load Switching Time Inductive Load 3/6 BUL116D Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 BUL116D TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 5/6 BUL116D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6