BUL58D ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES 3 1 2 TO-220 ■ INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 800 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 8 A 16 A A IC I CM Collector Peak Current (t p < 5 ms) Base Current 4 I BM Base Peak Current (t p < 5 ms) 8 A P tot Total Dissipation at T c = 25 o C 85 W T stg Storage Temperature IB Tj June 2001 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/6 BUL58D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.47 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 200 500 µA µA 200 µA I CES Collector Cut-off Current (V BE = 0) V CE = 800 V V CEO = 800 V I CEO Collector Cut-off Current (I B = 0) V CE = 450 V Collector-Emitter Sustaining Voltage I C = 100 mA Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 4 A IC = 5 A I B = 0.8 A IB = 1 A 1.5 2 V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 4 A IC = 5 A I B = 0.8 A IB = 1 A 1.3 1.5 V V DC Current Gain I C = 5 A V CE = 5 V I C = 500 mA V CE = 5 V 1.8 180 µs ns VCEO(sus) V EBO h FE ∗ T j = 125 o C L = 25 mH V 9 V 5 38 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V CL = 250 V I B1 = 0.4 A R BB = 0 Ω L = 200 µH 1 90 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V CL = 250 V T j = 125 o C I B1 = 0.4 A R BB = 0 Ω L = 200 µH 1.5 180 Vf Diode Forward Voltage IC = 3 A Safe Operating Areas µs ns 3 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 450 Derating Curve V BUL58D DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL58D Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL58D TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 5/6 BUL58D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6